Patents by Inventor Stuart Brinkley

Stuart Brinkley has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method to grow in-situ crystalline IGZO using co-sputtering targets
    Patent number: 9337030
    Abstract: A co-sputter technique is used to deposit In—Ga—Zn—O films using PVD. The films are deposited in an atmosphere including both oxygen and argon. A heater setpoint of about 300 C results in a substrate temperature of about 165 C. One target includes an alloy of In, Ga, Zn, and O with an atomic ratio of In:Ga:Zn of about 1:1:1. The second target includes a compound of zinc oxide. The films exhibit the c-axis aligned crystalline (CAAC) phase in an as-deposited state, without the need of a subsequent anneal treatment.
    Type: Grant
    Filed: November 20, 2014
    Date of Patent: May 10, 2016
    Assignee: Intermolecular, Inc.
    Inventors: Seon-Mee Cho, Stuart Brinkley, Anh Duong, Majid Gharghi, Sang Lee, Minh Huu Le, Karl Littau, Jingang Su
  • Methods for forming crystalline IGZO through annealing
    Patent number: 9202690
    Abstract: Embodiments described herein provide method for forming crystalline indium-gallium-zinc oxide (IGZO). A substrate is provided. An IGZO layer is formed above the substrate. The IGZO layer is annealed in an environment consisting essentially of nitrogen gas.
    Type: Grant
    Filed: December 20, 2013
    Date of Patent: December 1, 2015
    Assignees: Intermolecular, Inc., LG Display Co., Ltd.
    Inventors: Sang Lee, Stuart Brinkley, Yoon-Kyung Chang, Seon-Mee Cho, Min-Cheol Kim, Kwon-Sik Park, Woosup Shin
  • Novel Method to Grow In-Situ Crystalline IGZO
    Publication number: 20150279670
    Abstract: A co-sputter technique is used to deposit In—Ga—Zn—O films using PVD. The films are deposited in an atmosphere including both oxygen and argon. A heater setpoint of about 300 C results in a substrate temperature of about 165 C. One target includes an alloy of In, Ga, Zn, and O with an atomic ratio of In:Ga:Zn of about 1:1:1. The second target includes a compound of zinc oxide. The films exhibit the c-axis aligned crystalline (CAAC) phase in an as-deposited state, without the need of a subsequent anneal treatment.
    Type: Application
    Filed: November 20, 2014
    Publication date: October 1, 2015
    Inventors: Seon-Mee Cho, Stuart Brinkley, Anh Duong, Majid Gharghi, Sang Lee, Minh Huu Le, Karl Littau, Jingang Su
  • Methods for Forming Crystalline IGZO Through Annealing
    Publication number: 20150179448
    Abstract: Embodiments described herein provide method for forming crystalline indium-gallium-zinc oxide (IGZO). A substrate is provided. An IGZO layer is formed above the substrate. The IGZO layer is annealed in an environment consisting essentially of nitrogen gas.
    Type: Application
    Filed: December 20, 2013
    Publication date: June 25, 2015
    Applicants: Intermolecular, Inc.
    Inventors: Sang Lee, Stuart Brinkley, Yoon-Kyung Chang, Seon-Mee Cho, Min-Cheol Kim, Kwon-Sik Park, Woosup Shin
  • Methods for Forming Crystalline IGZO Through Processing Condition Optimization
    Publication number: 20150179446
    Abstract: Embodiments described herein provide method for forming crystalline indium-gallium-zinc oxide (IGZO). A substrate is provided. A layer is formed above the substrate using a PVD process. The layer includes indium, gallium, zinc, or a combination thereof. The PVD process is performed in a gaseous environment having a pressure of between about 1 mT and about 5 mT and including between about 20% and about 100% oxygen gas. The PVD process may be performed at a processing temperature between about 25° C. and about 400° C. The duty cycle of the PVD process may be between about 70% and about 100%.
    Type: Application
    Filed: December 20, 2013
    Publication date: June 25, 2015
    Applicants: LG DISPLAY CO., LTD., INTERMOLECULAR, INC.
    Inventors: Sang Lee, Stuart Brinkley, Yoon-Kyung Chang, Seon-Mee Cho, Min-Cheol Kim, Kwon-Sik Park, Woosup Shin