Abstract: A ferroelectric capacitor circuit for sensing hydrogen gas having a closed integrated circuit package, a ferroelectric capacitor within the closed integrated circuit package, the ferroelectric capacitor having a bismuth oxide based ferroelectric layer being able to absorb hydrogen gas that is within the closed integrated circuit package, absorbed hydrogen gas chemically reducing a portion of the bismuth oxide based ferroelectric layer into bismuth metal, the ferroelectric capacitor having a ferroelectric voltage, the ferroelectric voltage having a voltage strength, and means for measuring a decrease in the voltage strength of the ferroelectric voltage of the ferroelectric capacitor.

Abstract: An improved silicon chip metallization system for use in attaching silicon chips to substrates. The improvement comprises providing a layer of titanium between the silicon chip backside and the layers of chrome and gold which are conventionally used as the backside metallization. The layer of titanium adjacent to the silicon chip backside reduces silicon dioxide formation during chip attachment procedures carried out in non-vacuum environments.