Abstract: The target of a CRT comprises a single crystal substrate (e.g., YAG) on which are formed a plurality of color stripe triads of epitaxial material. Each stripe triad has three epitaxial layers in a staircase geometry and is overlayed with a metal stripe. The metal stripes are the fingers of a pair of interdigitated electrodes. A single e-beam scans the stripes horizontally, and a sequence of current pulses generated in the electrodes precisely defines the horizontal position of the beam relative to the triads. This information is used to precisely time the beam modulation for introducing color signals. The CRT is particularly suited to miniaturization and application in projection systems.

Abstract: The use of vanadium on the tetrahedral site of a garnet material together with a suitable charge compensating ion, such as Ca.sup.2+, results in advantageous materials. In particular, very high Curie temperatures, e.g., up to 524 degrees C., in films capable of supporting 1 .mu.m-sized bubble domains, are observed. Additionally, the change of collapse field with temperatures for magnetic bubble domains in the garnet material is linear and closely parallels over a wide temperature range the change of bubble controlling static field of permanent magnets typically employed in magnetic bubble devices. A substantially constant bubble size is maintainable over a wide temperature range. The desired garnet compositions are produced advantageously from a melt containing a suitable ratio of vanadium to calcium.

Abstract: The manufacture of magnetic bubble devices typically involves a step of epitaxially depositing a layer of a garnet material on a substrate having suitable lattice parameters, e.g., layers of certain rare earth-iron garnets are conveniently deposited on a gallium-gadolinium garnet substrate. Deposition by liquid epitaxy has been preferred and, in particular, deposition from a melt comprising garnet materials in a PbO--B.sub.2 O.sub.3 flux.According to the invention, garnet layers are epitaxially grown from a melt comprising a PbO--V.sub.2 O.sub.5 flux. Growth from such melt has desirably slow kinetics, resulting in slow deposition as is beneficial especially for the growth of layers on an assembly of substrates. Additional benefits are ease of removal of liquid droplets remaining on a grown film upon removal from the melt, both by spinning and by rinsing.

Abstract: Devices based on epitaxial garnet layers that exhibit a high magnetic anisotropy are disclosed. These garnet layers are produced by introducing a Co.sup.2+ or a species with 1, 2, 4, or 5 electrons in a 4d or a 5d electron orbital in the octahedral site of the garnet in conjunction with a typical anisotropy producing combination on the dodecahedral site. The contribution to magnetic anisotropy due to the typical combination on the dodecahedral site and the appropriate ion in an octahedral site is complementary.

Abstract: Devices based on epitaxial garnet layers which exhibit a substantial contribution to the magnetic anisotropy other than that attributable to the presence of magnetic rare earth ions are disclosed. These garnet layers are produced by introducing Co.sup.2+ or a species with 1, 2, 4, or 5 electrons in a 4d or 5d electronic orbital in the octahedral site of the garnet. It is possible to produce epitaxial garnets having low damping constants, as determined by resonance line widths on the order of 100 Oe, and K.sub.u 's on the order of 300,000 ergs/cm.sup.3.

Abstract: The temperature variation of the bubble collapse field of a class of garnet magnetic bubble layer materials is selected by selection of the ratio PbO to B.sub.2 O.sub.3 in the flux from which the layer is grown. This permits the growth of layers, whose temperature dependence of critical magnetic properties more closely match the temperature dependence of bias magnet materials, resulting in extended operating temperature range and/or wider operating margins (with attendant improvement in manufacturing yield). Layer growth at higher ratios of PbO to B.sub.2 O.sub.3 produces films of higher rate of change of bubble collapse field with temperature.

Abstract: Members of a class of garnet compositions of particular crystallographic orientation are usefully incorporated in magnetic memory devices which depend for their operation on the positioning of single wall domains ("bubbles"). Such compositions, ordinarily in the form of a supported layer defining a (110) orientation, manifest high limiting bubble velocity, thereby making possible high record and retrieval rates. Compositions invariably contain some lanthanum in the dodecahedral site. Increased limiting velocity is attributed to in-plane anisotropy, in turn, dependent upon partial lanthanum occupation. Depending upon composition, required unique easy direction out of the plane may be as-grown, stress induced, or a combination. Appropriate garnet substrates of required lattice parameters are described.