Abstract: A method of deprocessing a semiconductor structure is provided. The method involves removing a silicide layer over a second poly layer, an interpoly dielectric layer, a first poly layer, an optionally an oxide layer on a substrate. The method may further involve at least one of removing a second poly layer, removing an interpoly dielectric layer, removing a first poly layer, removing an oxide layer, and removing an unimplanted portion of a substrate. The exposed layer/portion of the semiconductor structure can be subjected to an inspection for defects and/or other characteristics. The inspection can aid in defect reduction strategies, among other things, when applied to new technology ramp, monitoring of baseline wafer starts, customer returns, etc.

Abstract: A method of deprocessing a semiconductor structure is provided. The method involves removing one or more interlevel dielectric layers and one or more metal components from a frontside of the semiconductor structure. By removing the interlevel dielectric layer and the metal component, the exposed portion of the semiconductor structure can be subjected to an inspection for defects and/or other characteristics by using an inspection tool. The inspection can aid in defect reduction strategies, among other things, when applied to new technology ramp, monitoring of baseline wafer starts, customer returns, etc.

Abstract: A method of deprocessing a semiconductor structure is provided. The method involves removing a silicide layer over a second poly layer, an interpoly dielectric layer, a first poly layer, an optionally an oxide layer on a substrate. The method may further involve at least one of removing a second poly layer, removing an interpoly dielectric layer, removing a first poly layer, removing an oxide layer, and removing an unimplanted portion of a substrate. The exposed layer/portion of the semiconductor structure can be subjected to an inspection for defects and/or other characteristics. The inspection can aid in defect reduction strategies, among other things, when applied to new technology ramp, monitoring of baseline wafer starts, customer returns, etc.

Abstract: A method of deprocessing a semiconductor structure is provided. The method involves removing one or more interlevel dielectric layers and one or more metal components from a frontside of the semiconductor structure. By removing the interlevel dielectric layer and the metal component, the exposed portion of the semiconductor structure can be subjected to an inspection for defects and/or other characteristics by using an inspection tool. The inspection can aid in defect reduction strategies, among other things, when applied to new technology ramp, monitoring of baseline wafer starts, customer returns, etc.