Abstract: A vertical semiconductor device is formed in a semiconductor layer having a first surface, a second surface and background doping. A first doped region, doped to a conductivity type opposite that of the background, is formed at the second surface of the semiconductor layer. A second doped region of the same conductivity type as the background is formed at the second surface of the semiconductor layer, inside the first doped region. A portion of the semiconductor layer is removed at the first surface, exposing a new third surface. A third doped region is formed inside the semiconductor layer at the third surface. Electrical contact is made at least to the second doped region (via the second surface) and the third doped region (via the new third surface). In this way, vertical DMOS, IGBT, bipolar transistors, thyristors, and other types of devices can be fabricated in thinned semiconductor, or SOI layers.

Abstract: An isolator assembly is disclosed. The assembly comprises a laminate consisting essentially of a block of homogenous material and a set of electrical contacts. A first die is coupled to a surface of the laminate. An isolation barrier is located entirely above the surface of the laminate. A second die is coupled to the laminate. The second die is galvanically isolated from the first die by the isolation barrier. The second die is in operative communication with the first die via the isolation barrier and a conductive trace on the laminate. The first die, the second die, the laminate, and the isolation barrier are all contained within an assembly package.