Abstract: A magnetic memory device includes a conductive line that extends in a first direction, and a magnetic track line that extends in the first direction on a top surface of the conductive line. The conductive line may include a first region having a first width in a second direction, and a second region having a second width in the second direction. The first direction and the second direction are parallel to the top surface of the conductive line and are perpendicular to each other. The second width may be greater than the first width. The magnetic track line includes first domains arranged in the first direction on the first region of the conductive line, and second domains arranged in the first direction on the second region of the conductive line. A size of each of the second domains may be less than a size of each of the first domains.

Abstract: A magnetic memory device may include a magnetic track, which is extended in a first direction, and a first electrode, which is provided at a biasing point of the magnetic track and is configured to apply a voltage to the magnetic track. The magnetic track includes a first region between a first end of the magnetic track and the biasing point and a second region between the biasing point and a second end of the magnetic track. The first electrode may be configured to cause a difference between a current density in the first region and a current density in the second region.

Abstract: A subterranean survey system includes a sensor string having a communications link and a plurality of survey sensors connected to the communications link. The sensor string has a loop connection to provide communications redundancy, and the survey sensors are used to detect signals affected by a subterranean structure. A first router is connected to the sensor string, and a transport network is connected to the first router. The first router communicates data from the survey sensors over the transport network.

Abstract: A subterranean survey system includes a sensor string having a communications link and a plurality of survey sensors connected to the communications link. The sensor string has a loop connection to provide communications redundancy, and the survey sensors are used to detect signals affected by a subterranean structure. A first router is connected to the sensor string, and a transport network is connected to the first router. The first router communicates data from the survey sensors over the transport network.

Abstract: Information from a network of seismic device is received, and a geographic representation of the network of seismic devices is generated. The geographic representation contains information regarding the seismic devices.

Abstract: Magnetic tunnel junctions are disclosed that include ferromagnetic (or ferrimagnetic) materials and a bilayer tunnel barrier structure that includes a layer of a rare earth oxide. The bilayer also includes a layer of crystalline material, such as MgO or Mg—ZnO. If MgO is used, then it is preferably (100) oriented. The magnetic tunnel junctions so formed enjoy high tunneling magnetoresistance, e.g., much greater than 100% at room temperature.

Abstract: Magnetic tunnel junctions are disclosed that include ferromagnetic (or ferrimagnetic) materials and a bilayer tunnel barrier structure that includes a layer of alkaline earth oxide. The bilayer also includes a layer of crystalline material, such as MgO or Mg—ZnO. If MgO is used, then it is preferably (100) oriented. The magnetic tunnel junctions so formed enjoy high tunneling magnetoresistance, e.g., much greater than 100% at room temperature.

Abstract: A spin-current switchable magnetic memory element (and method of fabricating the memory element) includes a plurality of magnetic layers having a perpendicular magnetic anisotropy component, at least one of the plurality of magnetic layers including an alloy of a rare-earth metal and a transition metal, and at least one barrier layer formed adjacent to at least one of the plurality of magnetic layers.

Abstract: Methods of manufacturing MTJ memory cells and structures thereof. A diffusion barrier is disposed between an anti-ferromagnetic layer and a pinned layer of an MTJ memory cell to improve thermal stability of the MTJ memory cell. The diffusion barrier may comprise an amorphous material or a NiFe alloy. An amorphous material may be disposed adjacent a bottom surface of a tunnel junction, within a free layer, or both. An MTJ memory cell with improved thermal stability and decreased Neel coupling is achieved.