Patents by Inventor Stuart S. P. Parkin

Stuart S. P. Parkin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210167280
    Abstract: A device including a multi-layered structure that includes: a first layer that includes a first magnetic Heusler compound; a second layer that is non-magnetic at room temperature and includes both Ru and at least one other element E, wherein the composition of the second layer is represented by Ru1?xEx, with x being in the range from 0.45 to 0.55; and a third layer including a second magnetic Heusler compound. The multi-layered structure may overlay a substrate. The device may include a tunnel barrier overlying the multi-layered structure.
    Type: Application
    Filed: February 12, 2021
    Publication date: June 3, 2021
    Inventors: Panagiotis Charilaos Filippou, Chirag Garg, Yari Ferrante, Stuart S.P. Parkin, Jaewoo Jeong, Mahesh G. Samant
  • Patent number: 11005029
    Abstract: A device is disclosed. The device includes a first magnetic layer and a tunnel barrier. The first magnetic layer has a volume uniaxial magnetic crystalline anisotropy. The magnetic moment of the first layer is substantially perpendicular to the first layer. The tunnel barrier is in proximity to the first magnetic layer. The orientation of the magnetic moment of the first magnetic layer is reversed by spin transfer torque induced by current passing between and through the first magnetic layer and the tunnel barrier.
    Type: Grant
    Filed: September 28, 2018
    Date of Patent: May 11, 2021
    Assignees: Samsung Electronics Co., Ltd.
    Inventors: Jaewoo Jeong, Mahesh G. Samant, Stuart S. P. Parkin, Yari Ferrante
  • Patent number: 10957848
    Abstract: Devices are described that include a multi-layered structure that comprises three layers. The first layer is a magnetic Heusler compound, the second layer (acting as a spacer layer) is non-magnetic at room temperature and comprises alternating layers of Ru and at least one other element E (preferably Al; or Ga or Al alloyed with Ga, Ge, Sn or combinations thereof), and the third layer is also a magnetic Heusler compound. The composition of the second layer is represented by Ru1?xEx, with x being in the range from 0.45 to 0.55. An MRAM element may be constructed by forming, in turn, a substrate, the multi-layered structure, a tunnel barrier, and an additional magnetic layer (whose magnetic moment is switchable).
    Type: Grant
    Filed: February 8, 2019
    Date of Patent: March 23, 2021
    Assignees: International Business Machines Corporation
    Inventors: Panagiotis Charilaos Filippou, Chirag Garg, Yari Ferrante, Stuart S. P. Parkin, Jaewoo Jeong, Mahesh G. Samant
  • Patent number: 10937953
    Abstract: A device is disclosed. The device includes a tetragonal Heusler compound of the form Mn3-xCoxGe, wherein 0<x?1, wherein Co accounts for at least 0.4 atomic percent of the Heusler compound. The device also includes a substrate oriented in the direction (001) and of the form YMn1+d, wherein Y includes an element selected from the group consisting of Ir and Pt, and 0?d?4. The tetragonal Heusler compound and the substrate are in proximity with each other, thereby allowing spin-polarized current to pass from one through the other. In one aspect, the device also includes a multi-layered structure that is non-magnetic at room temperature. The structure includes alternating layers of Co and E. E includes at least one other element that includes Al. The composition of the structure is represented by Co1-yEy, with y being in the range from 0.45 to 0.55.
    Type: Grant
    Filed: January 28, 2019
    Date of Patent: March 2, 2021
    Assignees: Samsung Electronics Co., Ltd., INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Jaewoo Jeong, Mahesh G. Samant, Stuart S. P. Parkin, Yari Ferrante
  • Publication number: 20200259076
    Abstract: Devices are described that include a multi-layered structure that comprises three layers. The first layer is a magnetic Heusler compound, the second layer (acting as a spacer layer) is non-magnetic at room temperature and comprises alternating layers of Ru and at least one other element E (preferably Al; or Ga or Al alloyed with Ga, Ge, Sn or combinations thereof), and the third layer is also a magnetic Heusler compound. The composition of the second layer is represented by Ru1-xEx, with x being in the range from 0.45 to 0.55. An MRAM element may be constructed by forming, in turn, a substrate, the multi-layered structure, a tunnel barrier, and an additional magnetic layer (whose magnetic moment is switchable).
    Type: Application
    Filed: February 8, 2019
    Publication date: August 13, 2020
    Inventors: Panagiotis Charilaos Filippou, Chirag Garg, Yari Ferrante, Stuart S.P. Parkin, Jaewoo Jeong, Mahesh G. Samant
  • Publication number: 20200243755
    Abstract: A device is disclosed. The device includes a tetragonal Heusler compound of the form Mn3-xCoxGe, wherein 0<x?1, wherein Co accounts for at least 0.4 atomic percent of the Heusler compound. The device also includes a substrate oriented in the direction (001) and of the form YMn1+d, wherein Y includes an element selected from the group consisting of Ir and Pt, and 0?d?4. The tetragonal Heusler compound and the substrate are in proximity with each other, thereby allowing spin-polarized current to pass from one through the other. In one aspect, the device also includes a multi-layered structure that is non-magnetic at room temperature. The structure includes alternating layers of Co and E. E includes at least one other element that includes Al. The composition of the structure is represented by Co1-yEy, with y being in the range from 0.45 to 0.55.
    Type: Application
    Filed: January 28, 2019
    Publication date: July 30, 2020
    Inventors: Jaewoo Jeong, Mahesh G. Samant, Stuart S.P. Parkin, Yari Ferrante
  • Patent number: 10651234
    Abstract: A device and method for providing the device are described. The device includes a substrate, a MnxN layer overlying the substrate, a multi-layered structure that is non-magnetic at room temperature and a first magnetic layer. The MnxN layer has 2?x?4.75. The multi-layered structure comprises alternating layers of Co and E, wherein E comprises at least one other element that includes Al. The composition of the multi-layered structure is represented by Co1-xEx, with x being in the range from 0.45 to 0.55. The first magnetic layer includes a Heusler compound. The first magnetic layer is in contact with the multi-layered structure and the first magnetic layer forms part of a magnetic tunnel junction.
    Type: Grant
    Filed: August 31, 2018
    Date of Patent: May 12, 2020
    Assignees: Samsung Electronics Co., Ltd.
    Inventors: Jaewoo Jeong, Mahesh G. Samant, Stuart S. P. Parkin, Yari Ferrante
  • Publication number: 20200105999
    Abstract: A device is disclosed. The device includes a first magnetic layer and a tunnel barrier. The first magnetic layer has a volume uniaxial magnetic crystalline anisotropy. The magnetic moment of the first layer is substantially perpendicular to the first layer. The tunnel barrier is in proximity to the first magnetic layer. The orientation of the magnetic moment of the first magnetic layer is reversed by spin transfer torque induced by current passing between and through the first magnetic layer and the tunnel barrier.
    Type: Application
    Filed: September 28, 2018
    Publication date: April 2, 2020
    Inventors: Jaewoo Jeong, Mahesh G. Samant, Stuart S.P. Parkin, Yari Ferrante
  • Publication number: 20190305040
    Abstract: A device and method for providing the device are described. The device includes a substrate, a MnxN layer overlying the substrate, a multi-layered structure that is non-magnetic at room temperature and a first magnetic layer. The MnxN layer has 2?x?4.75. The multi-layered structure comprises alternating layers of Co and E, wherein E comprises at least one other element that includes Al. The composition of the multi-layered structure is represented by Co1-xEx, with x being in the range from 0.45 to 0.55. The first magnetic layer includes a Heusler compound. The first magnetic layer is in contact with the multi-layered structure and the first magnetic layer forms part of a magnetic tunnel junction.
    Type: Application
    Filed: August 31, 2018
    Publication date: October 3, 2019
    Inventors: Jaewoo Jeong, Mahesh G. Samant, Stuart S.P. Parkin, Yari Ferrante
  • Patent number: 10396123
    Abstract: Devices are described that include a multi-layered structure that is non-magnetic at room temperature, and which comprises alternating layers of Co and at least one other element E (that is preferably Al; or Al alloyed with Ga, Ge, Sn or combinations thereof). The composition of this structure is represented by Co1-xEx, with x being in the range from 0.45 to 0.55. The structure is in contact with a first magnetic layer that includes a Heusler compound. An MRAM element may be formed by overlying, in turn, the first magnetic layer with a tunnel barrier, and the tunnel barrier with a second magnetic layer (whose magnetic moment is switchable). Improved performance of the MRAM element may be obtained by placing an optional pinning layer between the first magnetic layer and the tunnel barrier.
    Type: Grant
    Filed: July 26, 2017
    Date of Patent: August 27, 2019
    Assignees: International Business Machines Corporation, Samsung Electronics Co., Ltd
    Inventors: Jaewoo Jeong, Stuart S. P. Parkin, Mahesh G. Samant
  • Patent number: 10256490
    Abstract: An apparatus for separating oxygen from a gas mixture includes an oxide layer having ion transport channels therein, which facilitate the migration of oxygen ions from a first side to a second side of the layer. Molecular oxygen is decomposed into oxygen ions at the first side, whereas oxygen ions recombine into molecular oxygen at the second side. A first chamber into which a gas mixture (e.g., air) is admitted is located on the first side of the oxide layer. A second chamber receives oxygen from the oxide layer, and is located on the second side of the oxide layer; the second chamber has a polarizable medium that is in contact with the oxide layer. A gate electrode in contact with the polarizable medium applies an electric field to the second side of the oxide layer, thereby driving oxygen ions across the oxide layer.
    Type: Grant
    Filed: June 28, 2016
    Date of Patent: April 9, 2019
    Assignee: International Business Machines Corporation
    Inventors: Naga Phani B. Aetukuri, Stuart S. P. Parkin, Mahesh G. Samant
  • Patent number: 10247701
    Abstract: An apparatus includes an oxide layer having ion transport channels that facilitate the migration of oxygen ions from a first side to a second side of the layer. Specifically, molecular oxygen is decomposed into oxygen ions at the first side, and oxygen ions recombine into molecular oxygen at the second side. The apparatus includes a first chamber having a polarizable medium located on the second side of the oxide layer; a second chamber having an analyte that includes dissolved oxygen is located on the first side. The apparatus further includes a gate electrode that is in contact with, and applies a voltage to, the polarizable medium; in this manner, an electric field is applied to the second side of the oxide layer, which drives oxygen ions across the oxide layer. The apparatus can be used as an oxygen sensor, e.g., for detecting oxygen in a liquid such as blood.
    Type: Grant
    Filed: June 28, 2016
    Date of Patent: April 2, 2019
    Assignee: International Business Machines Corporation
    Inventors: Naga Phani B. Aetukuri, Stuart S. P. Parkin, Mahesh G. Samant
  • Publication number: 20190035849
    Abstract: Devices are described that include a multi-layered structure that is non-magnetic at room temperature, and which comprises alternating layers of Co and at least one other element E (that is preferably Al; or Al alloyed with Ga, Ge, Sn or combinations thereof). The composition of this structure is represented by Co1-xEx, with x being in the range from 0.45 to 0.55. The structure is in contact with a first magnetic layer that includes a Heusler compound. An MRAM element may be formed by overlying, in turn, the first magnetic layer with a tunnel barrier, and the tunnel barrier with a second magnetic layer (whose magnetic moment is switchable). Improved performance of the MRAM element may be obtained by placing an optional pinning layer between the first magnetic layer and the tunnel barrier.
    Type: Application
    Filed: July 26, 2017
    Publication date: January 31, 2019
    Inventors: JAEWOO JEONG, Stuart S.P. Parkin, Mahesh G. Samant
  • Patent number: 10177305
    Abstract: Devices are described that include a multi-layered structure that is non-magnetic at room temperature, and which comprises alternating layers of Co and at least one other element E (such as Ga, Ge, and Sn). The composition of this structure is represented by Co1-xEx, with x being in the range from 0.45 to 0.55. The structure is in contact with a first magnetic layer that includes a Heusler compound. An MRAM element may be formed by overlying, in turn, the first magnetic layer with a tunnel barrier, and the tunnel barrier with a second magnetic layer (whose magnetic moment is switchable). Improved performance of the MRAM element may be obtained by placing a pinning layer between the first magnetic layer and the tunnel barrier.
    Type: Grant
    Filed: January 19, 2017
    Date of Patent: January 8, 2019
    Assignee: International Business Machines Corporation
    Inventors: Jaewoo Jeong, Stuart S. P. Parkin, Mahesh G. Samant
  • Patent number: 10170696
    Abstract: Materials are disclosed that are used as seed layers in the formation of MRAM elements. In particular, a MnN layer oriented in the (001) direction is grown over a substrate. A magnetic layer overlying and in contact with the MnN layer forms part of a magnetic tunnel junction, in which the magnetic layer includes a Heusler compound that includes Mn. The magnetic tunnel junction includes the magnetic layer, a tunnel barrier overlying the magnetic layer, and a first (magnetic) electrode overlying the tunnel barrier. A second electrode is in contact with the MnN layer.
    Type: Grant
    Filed: October 26, 2017
    Date of Patent: January 1, 2019
    Assignees: International Business Machines Corporation, Samsung Electronics Co., Ltd.
    Inventors: Jaewoo Jeong, Stuart S. P. Parkin, Mahesh G. Samant
  • Publication number: 20180205008
    Abstract: Devices are described that include a multi-layered structure that is non-magnetic at room temperature, and which comprises alternating layers of Co and at least one other element E (such as Ga, Ge, and Sn). The composition of this structure is represented by Co1-xEx, with x being in the range from 0.45 to 0.55. The structure is in contact with a first magnetic layer that includes a Heusler compound. An MRAM element may be formed by overlying, in turn, the first magnetic layer with a tunnel barrier, and the tunnel barrier with a second magnetic layer (whose magnetic moment is switchable). Improved performance of the MRAM element may be obtained by placing a pinning layer between the first magnetic layer and the tunnel barrier.
    Type: Application
    Filed: January 19, 2017
    Publication date: July 19, 2018
    Inventors: JAEWOO JEONG, Stuart S.P. Parkin, Mahesh G. Samant
  • Publication number: 20170370879
    Abstract: An apparatus includes an oxide layer having ion transport channels that facilitate the migration of oxygen ions from a first side to a second side of the layer. Specifically, molecular oxygen is decomposed into oxygen ions at the first side, and oxygen ions recombine into molecular oxygen at the second side. The apparatus includes a first chamber having a polarizable medium located on the second side of the oxide layer; a second chamber having an analyte that includes dissolved oxygen is located on the first side. The apparatus further includes a gate electrode that is in contact with, and applies a voltage to, the polarizable medium; in this manner, an electric field is applied to the second side of the oxide layer, which drives oxygen ions across the oxide layer. The apparatus can be used as an oxygen sensor, e.g., for detecting oxygen in a liquid such as blood.
    Type: Application
    Filed: June 28, 2016
    Publication date: December 28, 2017
    Inventors: Naga Phani B. Aetukuri, Stuart S.P. Parkin, Mahesh G. Samant
  • Publication number: 20170373335
    Abstract: An apparatus for separating oxygen from a gas mixture includes an oxide layer having ion transport channels therein, which facilitate the migration of oxygen ions from a first side to a second side of the layer. Molecular oxygen is decomposed into oxygen ions at the first side, whereas oxygen ions recombine into molecular oxygen at the second side. A first chamber into which a gas mixture (e.g., air) is admitted is located on the first side of the oxide layer. A second chamber receives oxygen from the oxide layer, and is located on the second side of the oxide layer; the second chamber has a polarizable medium that is in contact with the oxide layer. A gate electrode in contact with the polarizable medium applies an electric field to the second side of the oxide layer, thereby driving oxygen ions across the oxide layer.
    Type: Application
    Filed: June 28, 2016
    Publication date: December 28, 2017
    Inventors: NAGA PHANI B. AETUKURI, STUART S.P. PARKIN, MAHESH G. SAMANT
  • Patent number: 9831422
    Abstract: A magnetic memory device includes a first magnetic structure on a substrate, a second magnetic structure between the substrate and the first magnetic structure, and a tunnel barrier between the first and second magnetic structures. At least one of the first and second magnetic structures includes a perpendicular magnetic layer on the tunnel barrier, and a polarization enhancement layer interposed between the tunnel barrier and the perpendicular magnetic layer. Here, the polarization enhancement layer contains cobalt, iron, and at least one of the elements of Group IV, and the polarization enhancement layer has a magnetization direction perpendicular to or substantially perpendicular to a top surface of the substrate.
    Type: Grant
    Filed: October 21, 2015
    Date of Patent: November 28, 2017
    Assignees: SAMSUNG ELECTRONICS CO., LTD., INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Woojin Kim, Joonmyoung Lee, Yong Sung Park, Stuart S. P. Parkin
  • Patent number: 9761793
    Abstract: Example embodiments relate to a magnetic memory device that includes a magnetic tunnel junction layer including a first magnetic layer, a second magnetic layer, and a first tunnel barrier layer between the first and second magnetic layers. The second magnetic layer is disposed on the first tunnel barrier layer and is in direct contact with the first tunnel barrier layer. The second magnetic layer includes cobalt-iron-beryllium (CoFeBe). A beryllium content of CoFeBe in the second magnetic layer ranges from about 2 at % to about 10 at %.
    Type: Grant
    Filed: May 18, 2016
    Date of Patent: September 12, 2017
    Assignees: Samsung Electronics Co., Ltd., International Business Machines Corporation
    Inventors: Woojin Kim, Keewon Kim, Jaewoo Jeong, Stuart S. P. Parkin, Mahesh Govind Samant