Abstract: A process and method for projection beam lithography which utilizes an estimator, such as a Kalman filter to control electron beam placement. The Kalman filter receives predictive information from a model and measurement information from a projection electron beam lithography tool and compensates for factors which cause beam placement error such as wafer heating and beam drift. The process and method may also utilize an adaptive Kalman filter to control electron beam placement. The adaptive Kalman filter receives predictive information from a number of models and measurement information from a projection electron beam lithography tool and compensates for factors which cause beam placement error such as heating and beam drift. The Kalman filter may be implemented such that real-time process control may be achieved.

Abstract: A process and method for projection beam lithography which utilizes an estimator, such as a Kalman filter to control electron beam placement. The Kalman filter receives predictive information from a model and measurement information from a projection electron beam lithography tool and compensates for factors which cause beam placement error such as wafer heating and beam drift. The process and method may also utilize an adaptive Kalman filter to control electron beam placement. The adaptive Kalman filter receives predictive information from a number of models and measurement information from a projection electron beam lithography tool and compensates for factors which cause beam placement error such as heating and beam drift. The Kalman filter may be implemented such that real-time process control may be achieved.

Abstract: The optical demuxplixer/multiplexer architecture includes an anamorphic optical system that decouples first characteristics of a beam passing through the anamorphic optical system from at least second characteristics of the beam.

Abstract: A fiber tap with configurable wavelength and polarization sensitivities and which may include a fiber connector is described. In one embodiment, light reflected from an interface between a pair of fibers is reflected into a photodetector with the option of an intermediate light pipe. In another embodiment, light reflected from an interface between a pair of fiber sections is reflected into an etched opening. The opening is filled with an index matching material and includes a mirrored surface. The reflected light is directed from the mirrored surface to a photodetector. In each embodiment, an assembly technique for tapping arrays of several fibers is supported.

Abstract: The optical demuxplixer/multiplexer architecture includes an anamorphic optical system that decouples first characteristics of a beam passing through the anamorphic optical system from at least second characteristics of the beam.

Abstract: The optical gain equalizer includes a plurality of active elements. The plurality of active elements are arrayed such that a physical gap between adjacent active elements is distributed in spectral space for a beam incident on the equalizer.

Abstract: In the method of inserting an optical system into optical fibers in bulk, the position of a portion of optical fibers in a bundle of optical fibers is fixed. Then, the bundle of optical fibers is sliced at the fixed portion to form a first and second bundle of optical fibers, and an optical system such as a tap optical system that preserve fiber relationship integrity is positioned between the first and second bundles of optical fibers.

Abstract: An electron beam lithographic apparatus has an electron gun providing a beam of accelerated electrons, a mask stage adapted to hold a mask in a path of the beam of accelerated electrons, and a workpiece stage adapted to hold a workpiece in a path of electrons that have passed through the mask. The electron gun has a cathode having an electron emission surface, an anode adapted to be connected to a high-voltage power supply to provide an electric field between the cathode and the anode to accelerate electrons emitted from the cathode toward the anode, and a current-density-profile control grid disposed between the anode and the cathode. The current-density-profile control grid is configured to provide an electron gun that produces an electron beam having a non-uniform current density profile.

Abstract: An alignment sensor having a fixed reference grating and a movable wafer grating receiving electromagnetic radiation from a coherent illumination source. The illumination source is split into two beams by a beamsplitter. One beam is directed to a fixed reference grating and the diffracted orders are collected. The other beam from the beamsplitter is directed to a movable wafer grating. The diffracted orders from the movable wafer grating are collected and caused to interfere with the diffracted orders from the fixed reference grating, causing a phase shift indicative of the wafer movement or misalignment with respect to the fixed reference grating. Multiple channels having discrete wavelengths or colors are used to optimize detection and alignment irrespective of wafer processing variables. A polarization fixture on the illumination source and a central polarizing portion on the beamsplitter is used to provide contrast optimization, or alternately a latent image metrology mode.

Abstract: A process and method for projection beam lithography which utilizes an estimator, such as a Kalman filter to control electron beam placement. The Kalman filter receives predictive information from a model and measurement information from a projection electron beam lithography tool and compensates for factors which cause beam placement error such as wafer heating and beam drift. The process and method may also utilize an adaptive Kalman filter to control electron beam placement. The adaptive Kalman filter receives predictive information from a number of models and measurement information from a projection electron beam lithography tool and compensates for factors which cause beam placement error such as heating and beam drift. The Kalman filter may be implemented such that real-time process control may be achieved.

Abstract: An illumination system for use in photolithography using a laser or radiation beam source. A deformable mirror is used to shape the beam of laser radiation to obtain global uniformity. A profile sensing means is used to detect any global non-uniformities. The output of this sensing means is fed to a controller for calculating a mirror contour and controlling actuators that shape the deformable mirror to obtain a globally uniform intensity. A diffractive or diffusive optical element, such as a microlens array, eliminates local non-uniformities. Movement of this element eliminates speckle caused by interference due to the coherent beam source. A uniform intensity profile and appropriate angular spread is achieved with very little transmission loss and is automatically compensated for degraded or changing source performance. The illumination system is particularly applicable to a scanning photolithography process as used in the manufacture of semiconductor substrates.