Patents by Inventor Su Chae

Su Chae has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20060286666
    Abstract: Disclosed are methods and apparatuses for culturing stem cell using biomaterial shell, e.g. fertilized zebrafish chorions, which may induce formation of embryonic bodies, cell proliferation, and cell differentiation to other types effectively inside the chorions without adding any inducing agents or cell differentiation stimulants. There is provided an apparatus for culturing stem cell using biomaterial shell comprising: a microwell layer having a plurality of microwells; a microhole layer having a plurality of microholes, the microhole layer being located under the microwell layer, diameter of the microholes being smaller than diameter of the microwells and diameter of the biomaterial shell; and a flow-channel layer having a plurality of flow-channels for supplying cell medium to the microholes, the flow-channel layer being located under the microhole layer, and wherein the stem cell is encapsulated by the biomaterial shell in the microwell.
    Type: Application
    Filed: June 17, 2005
    Publication date: December 21, 2006
    Inventors: Ji Kang, Choong Kim, Jin Lee, Su Chae, Dae Na, Byeong Ju
  • Publication number: 20060134856
    Abstract: A method for manufacturing a capacitor of a semiconductor element including: forming a bottom electrode of the capacitor on a semiconductor substrate; performing rapid thermal nitrification (RTN) on the upper surface of the bottom electrode; performing a thermal process on the obtained structure having the bottom electrode in a furnace under a nitride atmosphere to eliminate stress generated by the RTN; forming Al2O3 and HfO2 dielectric films on the nitrified bottom electrode; and forming a plate electrode of the capacitor on the Al2O3 and HfO2 dielectric films. The thermal process is performed after the RTN performed on the surface of the bottom electrode, so that stress, generated from the RTN, is alleviated, thereby allowing the capacitor to obtain a high capacitance and lowering leakage current.
    Type: Application
    Filed: March 24, 2005
    Publication date: June 22, 2006
    Applicant: HYNIX SEMICONDUCTOR INC.
    Inventors: Ho Cho, Jun Chang, Eun Lee, Su Chae, Young Kim