Abstract: Provided are a method of depositing a thin film and a method of manufacturing a semiconductor device using the same, and the method of depositing a thin film uses a substrate processing apparatus including a chamber, a substrate support on which a substrate is mounted, a gas supply unit, and a power supply unit that supplies high-frequency and low-frequency power to the chamber, and includes: a step of mounting, on the substrate support, the substrate including a lower thin film deposited under the condition of a process temperature in a low temperature range; a step of depositing an upper thin film on the lower thin film under the condition of the process temperature in the low temperature range; and a step of treating a surface of the upper thin film under the condition of the process temperature in the low temperature range.

Abstract: The present invention relates to an X-ray irradiator for single blood bags, comprising: an X-ray irradiator main body provided with a chamber configured to safely hold a single blood bag therein and an X-ray tube configured to irradiate the chamber with X-rays; a loading part configured to load the blood bag; and a transfer part configured to transfer the blood bag between the loading part and the chamber to which X-rays are to be emitted. The X-ray irradiator for single blood bags according to the present invention can treat a single blood bag with X-rays, such that treatment optimized for a small amount of a blood bag can be performed, and a system configuration can be simplified by using an X-ray tube.

Abstract: There is provide a method for manufacturing analytical semiconductor samples by using an apparatus for manufacturing analytical semiconductor samples, which minimizes a feedback time by manufacturing a viewing surface that is environment-friendly and has a large area. The method comprising mounting the analytical semiconductor samples to a holder; discharging deionized (DI) water to an upper surface of a polishing plate through a DI water nozzle; grinding the analytical semiconductor samples with the upper surface of the polishing plat; determining whether a desired viewing surface of the analytical semiconductor samples has been acquired after the grinding of the analytical semiconductor samples; and transferring the analytical semiconductor samples to analyze the viewing surface of the ground analytical semiconductor samples based on a determination that the desired viewing surface of the analytical semiconductor samples has been acquired.

Abstract: A pressure adjustment apparatus includes a storage tank storing a gas for the chamber with an outlet, a first supply line supplying the gas from an external line to the storage tank, a second supply line supplying the gas from the storage tank to the chamber, a discharge line discharging the gas from the chamber using the outlet of the chamber, and a controller controlling valves at the first, second, and discharge lines. The discharge line includes first and second valves connected to each other in parallel at an end portion of the outlet of the chamber, and a third valve connected to the end portion of the outlet of the chamber. The controller opens the first and second valves to discharge the gas from the chamber, and opens the third valve after a predetermined amount of time after the opening of the first and second valves.