Patents by Inventor Su Dong Park

Su Dong Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11945744
    Abstract: Disclosed are a method and apparatus for reusing wastewater. The method for reusing wastewater disclosed herein includes: generating a mixed wastewater by mixing multiple types of wastewater (S20); performing a first purification by passing the mixed wastewater through a flocculation-sedimentation unit (S40); performing a second purification by passing an effluent of the flocculation-sedimentation unit through a membrane bioreactor (MBR) (S60); performing a third purification by passing an effluent of the MBR through a reverse-osmosis membrane unit (S80); and reusing an effluent of the reverse-osmosis membrane unit as cooling water or industrial water (S100).
    Type: Grant
    Filed: April 14, 2023
    Date of Patent: April 2, 2024
    Assignees: SAMSUNG ENGINEERING CO., LTD., SAMSUNG ELECTRONICS CO., LTD
    Inventors: Seok Hwan Hong, Dae Soo Park, Seung Joon Chung, Yong Xun Jin, Jae Hyung Park, Jae Hoon Choi, Jae Dong Hwang, Jong Keun Yi, Su Hyoung Cho, Kyu Won Hwang, June Yurl Hur, Je Hun Kim, Ji Won Chun
  • Publication number: 20240091235
    Abstract: The present invention relates to use of a compound of chemical formula 1 or a pharmaceutically acceptable salt thereof as a selective agonist of the melanocortin-4-receptor (MC4R).
    Type: Application
    Filed: December 21, 2021
    Publication date: March 21, 2024
    Applicant: LG CHEM, LTD.
    Inventors: Hee Dong PARK, Su Jin YEO, Hyun Seo PARK, Jin Sook PARK, Hye Won AHN
  • Publication number: 20230259078
    Abstract: The objective of the present invention is to provide a temperature discretization digital device capable of achieving thermalBIT, which controls the characteristic of bifurcation of a temperature solution of a thermoelectric heat equation by adjusting an internal calorific value control parameter such as a current/voltage/thermoelectric property coefficient, so as to cause numbers 0 and 1 to correspond to the numerical range of a temperature solution. To this end, the present invention comprises a thermalBIT solution realizing material having a multi-temperature solution in a medium-sized current or voltage area, controls the characteristic of bifurcation of a temperature solution of a thermoelectric heat equation by adjusting an internal calorific value control parameter; and causes numbers 0 and 1 to correspond to the numerical range of a multi-temperature solution so that thermalBIT is realized.
    Type: Application
    Filed: June 11, 2021
    Publication date: August 17, 2023
    Applicant: KOREA ELECTROTECHNOLOGY RESEARCH INSTITUTE
    Inventors: Byungki RYU, Jaywan CHUNG, Su-Dong PARK
  • Publication number: 20150372212
    Abstract: This invention relates to a Te-based thermoelectric material having stacking faults by addition of an interstitial dopant, including unit cells configured such that A-B-A-C-A elements are stacked to five layers, in which A element of a terminal of a unit cell and A element of a terminal of another unit cell are repeatedly stacked by a van der Waals interaction, wherein an interstitial element as the dopant is located at an interstitial position between the repeatedly stacked A elements adjacent to each other, thus generating stacking faults of the repeatedly stacked unit cells to thereby form a twin as well as a complex crystal structure different from the unit cells (where A is Te or Se, B is Bi or Sb, and C is Bi or Sb).
    Type: Application
    Filed: August 29, 2014
    Publication date: December 24, 2015
    Inventors: Su Dong Park, Bong Seo Kim, Bok Ki Min, Min Wook Oh, Jae Ki Lee, Hee Woong Lee, Gi Jeong Kong
  • Patent number: 8894792
    Abstract: Disclosed herein are a method for manufacturing a functional material for use in various industrial fields in which anisotropy or physical properties change according to height may be utilized, as well as a functional material manufactured thereby. The method includes the steps of: (1) mixing powders composed of the components of the functional material with a binder to prepare a mixed paste; (2) coating the mixed paste on a substrate, and then separating the coated material from the substrate, thus preparing a slice; (3) repeating step (2) to prepare a plurality of slices, and stacking the slices in a mold; and (4) pressing the stacked slices at a predetermined temperature and pressure. A multifunctional material, such as an anisotropic material having physical properties which change according to the direction of material, or a material having physical properties which change in a graduated manner according to height, may be manufactured in a simple and economical manner.
    Type: Grant
    Filed: December 26, 2008
    Date of Patent: November 25, 2014
    Assignee: Korea Electrotechnology Research Institute
    Inventors: Su Dong Park, Hee Woong Lee, Bong Seo Kim, Min Wook Oh
  • Publication number: 20100116309
    Abstract: Disclosed herein is a thermoelectric material for intermediate- and low-temperature applications, in which any one or a mixture of two or more selected from among La, Sc and MM is added to a Ag-containing metallic thermoelectric material or semiconductor thermoelectric material. The thermoelectric material has a low thermal diffusivity, a high Seebeck coefficient, a low specific resistivity, a high power factor and a low thermal conductivity, and thus has a high dimensionless figure of merit, thus showing very excellent thermoelectric properties. The thermoelectric material provide thermoelectric sensors having high sensitivity and low noise and, in addition, is widely used as a thermoelectric material for intermediate- and low-temperature applications, because it shows excellent thermoelectric performance in the intermediate- and low-temperature range.
    Type: Application
    Filed: December 26, 2008
    Publication date: May 13, 2010
    Applicant: Korea Electrotechnology Research Institute
    Inventors: Su Dong Park, Hee Woong Lee, Bong Seo Kim, Min Wook Oh
  • Publication number: 20100098957
    Abstract: Disclosed herein are a method for manufacturing a functional material for use in various industrial fields in which anisotropy or physical properties change according to height may be utilized, as well as a functional material manufactured thereby. The method includes the steps of: (1) mixing powders composed of the components of the functional material with a binder to prepare a mixed paste; (2) coating the mixed paste on a substrate, and then separating the coated material from the substrate, thus preparing a slice; (3) repeating step (2) to prepare a plurality of slices, and stacking the slices in a mold; and (4) pressing the stacked slices at a predetermined temperature and pressure. A multifunctional material, such as an anisotropic material having physical properties which change according to the direction of material, or a material having physical properties which change in a graduated manner according to height, may be manufactured in a simple and economical manner.
    Type: Application
    Filed: December 26, 2008
    Publication date: April 22, 2010
    Applicant: Korea Electrotechnology Research Institute
    Inventors: Su Dong Park, Hee Woong Lee, Bong Seo Kim, Min Wook Oh
  • Publication number: 20080160290
    Abstract: A method of fabricating an aligned nanoparticle channel, including a first step of forming a polymer nanoparticle blended composite by dispersing nanoparticles in a first polymer; a second step of forming a binary polymer nanoparticle blended composite by melt-blending the polymer nanoparticle blended composite with a second polymer, which is immiscible with the first polymer, and then cooling the mixture; and a third step of forming an aligned nanoparticle channel by applying a shear force to the binary polymer nanoparticle blended composite such that the nanoparticles dispersed in the first polymer are aligned in a direction parallel to the shear force, and an aligned nanoparticle channel fabricated using the method.
    Type: Application
    Filed: August 28, 2007
    Publication date: July 3, 2008
    Applicant: Korea Electrotechnology Research Institute
    Inventors: Su Dong Park, Dong Hee Han, Young Hwan Kwon
  • Patent number: 7005105
    Abstract: The present invention relates to Fe—Cr—Ar type alloys with additions to improve workability thereof, strength, and heat resistance. The present Fe—Cr—Al alloy for electric resistance wires comprises a basic alloy added with only Be of below 0.01 wt % or with both Be and misch metal composed of rare earth elements wherein the basic alloy consists of a balance element of Fe, a Cr element of 12˜30 wt %, an Al element of 3˜14 wt %, a Zr element of 0.01˜1.5 wt %, and a Ti element of 0.001˜0.1 wt %. The present Fe—Cr—Al type alloys remarkably improve physical properties of Fe—Cr—Al ferritic alloys, especially, workability and mechanical properties, and heating characteristic.
    Type: Grant
    Filed: December 28, 2001
    Date of Patent: February 28, 2006
    Assignee: Korea Electrotechnology Research Institute
    Inventors: Hee Woong Lee, Su Dong Park
  • Publication number: 20020122739
    Abstract: The present invention relates to Fe—Cr—Ar type alloys with additions to improve workability thereof, strength, and heat resistance. The present Fe—Cr—Al alloy for electric resistance wires comprises a basic alloy added with only Be of below 0.01 wt % or with both Be and misch metal composed of rare earth elements wherein the basic alloy consists of a balance element of Fe, a Cr element of 12˜30 wt %, an Al element of 3˜14 wt %, a Zr element of 0.01˜1.5 wt %, and a Ti element of 0.001˜0.1 wt %. The present Fe—Cr—Al type alloys remarkably improve physical properties of Fe—Cr—Al ferritic alloys, especially, workability and mechanical properties, and heating characteristic.
    Type: Application
    Filed: December 28, 2001
    Publication date: September 5, 2002
    Applicant: Korea Electrotechnology Research Institute
    Inventors: Hee Woong Lee, Su Dong Park