Abstract: A screwdriver includes a main body, an end cap, and a holding seat. Thus, the tips are inserted into the mounting holes of the holding seat and received in the receiving chamber of the main body, thereby facilitating the user carrying the tips, and thereby saving the space of storage. In addition, the holding seat is rotatable relative to the end cap, so that the mounting holes of the holding seat are directed outward to facilitate the user removing or placing the tips.

Abstract: A screwdriver includes a main body, an end cap, a holding seat, and a release mechanism. Thus, the holding seat and the end cap are removed from the main body easily and rapidly, thereby facilitating the user taking or placing the tips mounted in the mounting holes of the holding seat. In addition, the user only needs to press the push button of each of the two push button sets of the release mechanism so as to detach the holding seat and the end cap from the main body, thereby facilitating the user removing the holding seat and the end cap from the main body.

Abstract: A method for forming a dynamic random access memory cell with an increased capacitance capacitor having a multi-pillared storage node is achieved. A first layer of polysilicon fills an opening through a first dielectric layer to a node contact region. A photoresist mask is formed over the portion of a second dielectric layer over the polysilicon layer over the node contact region. The photoresist mask is silylated. The top silylated photoresist portion is removed. The second dielectric layer and the first polysilicon layer are etched away where they are not covered by the photoresist mask and the silylated photoresist sidewalls thereby forming a T-shaped first polysilicon layer. The photoresist mask is removed whereby the silylated photoresist sidewalls remain. The second dielectric layer is etched away where it is not covered by the silylated photoresist sidewalls thereby forming dielectric bars underlying the sidewalls and exposing the first polysilicon layer between the dielectric bars.