Patents by Inventor Su-han Yun

Su-han Yun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ion source element, ion implanter having the same and method of modifying the same
    Patent number: 7812320
    Abstract: An ion source element, an ion implanter having the ion source element and a method of modifying the ion source element are provided. In the ion source element, a chamber may have a cavity divided into a plurality of inner sections configured substantially perpendicularly to an axis defined through centers of ends of the cavity. The larger inner sections may be at, or near, a center of the cavity and become smaller toward the ends of the cavity. A filament may be disposed at one end of the chamber to emit thermal electrons. A repeller may extend into the chamber through the other end of the chamber. An inlet may be formed in a first cavity wall to introduce gas having a dopant species into the chamber. A beam slit may be formed in a second cavity wall, opposite the inlet, of the chamber to extract an ionized species of the gas from the chamber.
    Type: Grant
    Filed: September 15, 2006
    Date of Patent: October 12, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Su-han Yun, Jong-hyun Yang, Do-in Bae, Seong-gu Kim
  • Ion source element, ion implanter having the same and method of modifying the same
    Publication number: 20070075266
    Abstract: An ion source element, an ion implanter having the ion source element and a method of modifying the ion source element are provided. In the ion source element, a chamber may have a cavity divided into a plurality of inner sections configured substantially perpendicularly to an axis defined through centers of ends of the cavity. The larger inner sections may be at, or near, a center of the cavity and become smaller toward the ends of the cavity. A filament may be disposed at one end of the chamber to emit thermal electrons. A repeller may extend into the chamber through the other end of the chamber. An inlet may be formed in a first cavity wall to introduce gas having a dopant species into the chamber. A beam slit may be formed in a second cavity wall, opposite the inlet, of the chamber to extract an ionized species of the gas from the chamber.
    Type: Application
    Filed: September 15, 2006
    Publication date: April 5, 2007
    Inventors: Su-han Yun, Jong-hyun Yang, Do-in Bae, Seong-gu Kim