Patents by Inventor Su-Hua CHANG
Su-Hua CHANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240021651Abstract: An image sensor includes a pixel array, a dielectric layer, a plurality of first conductive shielding regions, and a plurality of second conductive shielding regions. The pixel array includes photodiodes within a substrate. The dielectric layer is over the substrate. From a plan view, the first conductive shielding regions are adjacent four corners of the pixel array, and the second conductive shielding regions are adjacent four sides of the pixel array. The second conductive region has a length-to-width ratio greater than a length-to-width ratio of the first conductive region.Type: ApplicationFiled: July 27, 2023Publication date: January 18, 2024Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Volume CHIEN, Su-Hua CHANG, Chia-Yu WEI, Zen-Fong HUANG, Chi-Cherng JENG
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Patent number: 11810939Abstract: A backside illuminated image sensor device with a shielding layer and a manufacturing method thereof are provided. In the backside illuminated image senor device, a patterned conductive shielding layer is formed on a dielectric layer on a backside surface of a semiconductor substrate and surrounding a pixel array on a front side surface of the semiconductor substrate.Type: GrantFiled: May 13, 2022Date of Patent: November 7, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Volume Chien, Su-Hua Chang, Chia-Yu Wei, Zen-Fong Huang, Chi-Cherng Jeng
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Publication number: 20220271071Abstract: A backside illuminated image sensor device with a shielding layer and a manufacturing method thereof are provided. In the backside illuminated image senor device, a patterned conductive shielding layer is formed on a dielectric layer on a backside surface of a semiconductor substrate and surrounding a pixel array on a front side surface of the semiconductor substrate.Type: ApplicationFiled: May 13, 2022Publication date: August 25, 2022Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Volume CHIEN, Su-Hua CHANG, Chia-Yu WEI, Zen-Fong HUANG, Chi-Cherng JENG
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Patent number: 11335721Abstract: A backside illuminated image sensor device with a shielding layer and a manufacturing method thereof are provided. In the backside illuminated image senor device, a patterned conductive shielding layer is formed on a dielectric layer on a backside surface of a semiconductor substrate and surrounding a pixel array on a front side surface of the semiconductor substrate.Type: GrantFiled: November 6, 2013Date of Patent: May 17, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Volume Chien, Su-Hua Chang, Chia-Yu Wei, Zen-Fong Huang, Chi-Cherng Jeng
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Patent number: 11063077Abstract: A semiconductor structure includes a substrate, a barrier layer disposed over the substrate, a grid disposed over the barrier layer, and a first color filter disposed over the barrier layer. The semiconductor structure also includes a second color filter disposed over the substrate and laterally surrounded by and contacting the grid. The semiconductor structure further includes a dielectric layer disposed between the barrier layer and the substrate. The barrier layer includes an upper surface overlapping the grid and the first color filter and a bottom surface substantially level with a bottom surface of the second color filter. The dielectric layer includes a first portion overlapping a bottom surface of the first color filter and a second portion overlapping a bottom surface of the second color filter, wherein non-visible light is allowed to pass from the second color filter to the substrate through the second portion of the dielectric layer.Type: GrantFiled: December 24, 2019Date of Patent: July 13, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Zen-Fong Huang, Volume Chien, Su-Hua Chang
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Publication number: 20200135784Abstract: A semiconductor structure includes a substrate, a barrier layer disposed over the substrate, a grid disposed over the barrier layer, and a first color filter disposed over the barrier layer. The semiconductor structure also includes a second color filter disposed over the substrate and laterally surrounded by and contacting the grid. The semiconductor structure further includes a dielectric layer disposed between the barrier layer and the substrate. The barrier layer includes an upper surface overlapping the grid and the first color filter and a bottom surface substantially level with a bottom surface of the second color filter. The dielectric layer includes a first portion overlapping a bottom surface of the first color filter and a second portion overlapping a bottom surface of the second color filter, wherein non-visible light is allowed to pass from the second color filter to the substrate through the second portion of the dielectric layer.Type: ApplicationFiled: December 24, 2019Publication date: April 30, 2020Inventors: ZEN-FONG HUANG, VOLUME CHIEN, SU-HUA CHANG
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Patent number: 10515991Abstract: A semiconductor structure includes a substrate including a first side and a second side disposed opposite to the first side and configured to receive an electromagnetic radiation, a barrier layer disposed over the second side of the substrate, a color filter disposed over the barrier layer, and a grid surrounding the color filter and disposed over the barrier layer, wherein the barrier layer is configured to absorb or reflect non-visible light in the electromagnetic radiation, and the barrier layer is disposed between the grid and the substrate.Type: GrantFiled: April 17, 2015Date of Patent: December 24, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Zen-Fong Huang, Volume Chien, Su-Hua Chang
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Patent number: 9786710Abstract: An image sensor device includes a substrate, a color filter layer, at least a pixel, a main isolation structure and a sub-isolation structure. The color filter layer is disposed over the substrate. The color filter layer includes a first color filter having a single one of primary colors. The pixel is disposed in the substrate and aligned with the first color filter. The main isolation structure surrounds the pixel in the substrate. The sub-isolation structure is disposed to divide the pixel into a plurality of sub-first pixels. The sub-pixels correspond to the first color filter having the single one of primary colors, and each of the sub-first pixels includes a radiation sensor.Type: GrantFiled: September 30, 2015Date of Patent: October 10, 2017Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Su-Hua Chang, Volume Chien, Yung-Lung Hsu
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Publication number: 20170092684Abstract: An image sensor device includes a substrate, a color filter layer, at least a pixel, a main isolation structure and a sub-isolation structure. The color filter layer is disposed over the substrate. The color filter layer includes a first color filter having a single one of primary colors. The pixel is disposed in the substrate and aligned with the first color filter. The main isolation structure surrounds the pixel in the substrate. The sub-isolation structure is disposed to divide the pixel into a plurality of sub-first pixels. The sub-pixels correspond to the first color filter having the single one of primary colors, and each of the sub-first pixels includes a radiation sensor.Type: ApplicationFiled: September 30, 2015Publication date: March 30, 2017Inventors: Su-Hua CHANG, Volume CHIEN, Yung-Lung HSU
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Publication number: 20160307950Abstract: A semiconductor structure includes a substrate including a first side and a second side disposed opposite to the first side and configured to receive an electromagnetic radiation, a barrier layer disposed over the second side of the substrate, a color filter disposed over the barrier layer, and a grid surrounding the color filter and disposed over the barrier layer, wherein the barrier layer is configured to absorb or reflect non-visible light in the electromagnetic radiation, and the barrier layer is disposed between the grid and the substrate.Type: ApplicationFiled: April 17, 2015Publication date: October 20, 2016Inventors: ZEN-FONG HUANG, VOLUME CHIEN, SU-HUA CHANG
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Patent number: 9247116Abstract: An image sensor device and a manufacturing method for forming an image sensor device are provided. The image sensor device includes a semiconductor substrate having an array region and a periphery region. The image sensor device also includes a light sensing region in the array region of the semiconductor substrate. The image sensor device further includes a dielectric structure over the array region and the periphery region, and the dielectric structure has a substantially planar top surface. In addition, the image sensor device includes a recess in the dielectric structure and substantially aligned with the light sensing region. The image sensor device also includes a filter in the recess and a light blocking grid in the dielectric structure and surrounding a portion of the filter.Type: GrantFiled: March 14, 2014Date of Patent: January 26, 2016Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Volume Chien, Su-Hua Chang, Zen-Fong Huang, Chia-Yu Wei, Chi-Cherng Jeng, Hsin-Chi Chen
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Publication number: 20150264233Abstract: An image sensor device and a manufacturing method for forming an image sensor device are provided. The image sensor device includes a semiconductor substrate having an array region and a periphery region. The image sensor device also includes a light sensing region in the array region of the semiconductor substrate. The image sensor device further includes a dielectric structure over the array region and the periphery region, and the dielectric structure has a substantially planar top surface. In addition, the image sensor device includes a recess in the dielectric structure and substantially aligned with the light sensing region. The image sensor device also includes a filter in the recess and a light blocking grid in the dielectric structure and surrounding a portion of the filter.Type: ApplicationFiled: March 14, 2014Publication date: September 17, 2015Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Volume CHIEN, Su-Hua CHANG, Zen-Fong HUANG, Chia-Yu WEI, Chi-Cherng JENG, Hsin-Chi CHEN
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Publication number: 20150123225Abstract: A backside illuminated image sensor device with a shielding layer and a manufacturing method thereof are provided. In the backside illuminated image senor device, a patterned conductive shielding layer is formed on a dielectric layer on a backside surface of a semiconductor substrate and surrounding a pixel array on a front side surface of the semiconductor substrate.Type: ApplicationFiled: November 6, 2013Publication date: May 7, 2015Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Volume CHIEN, Su-Hua CHANG, Chia-Yu WEI, Zen-Fong HUANG, Chi-Cherng JENG