Abstract: A light emitting element of an embodiment may comprise: a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, and first and second electrodes placed on the first and second conductive semiconductor layers respectively, wherein the light emitting structure includes a first mesa region, the first conductive type semiconductor layer includes a second mesa region, and the first electrode includes: a first region which is a partial region of the upper surface of the second mesa region; a second region which is the side surface of the second mesa region; and a third region arranged to extend from the edge of the side surface of the second mesa region, wherein the first, second, and third regions are formed such that the thickness of the first region (d1), the second region (d2), and the third region (d3) have a ratio of d1:d2:d3=1:0.9˜1.1:1.

Abstract: Embodiments of a light-emitting element and a light-emitting element array comprise: a light-emitting structure which includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; first and second electrodes which are disposed respectively on the first and second conductive type semiconductor layers; and an insulation layer which is disposed on the light-emitting structure exposed between the first electrode and the second electrode, wherein the second electrode comprises a light-emitting element including: a first part which overlaps with the second conductive type semiconductor layer in the thickness direction of the light-emitting structure; and a second part which extends from the first part and does not overlap with the second conductive type semiconductor layer in the thickness direction, thereby being capable of improving the productivity of a light-emitting element manufacturing process while minimizing the light leakage phenomenon between the

Abstract: A light emitting element of an embodiment may comprise: a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, and first and second electrodes placed on the first and second conductive semiconductor layers respectively, wherein the light emitting structure includes a first mesa region, the first conductive type semiconductor layer includes a second mesa region, and the first electrode includes: a first region which is a partial region of the upper surface of the second mesa region; a second region which is the side surface of the second mesa region; and a third region arranged to extend from the edge of the side surface of the second mesa region, wherein the first, second, and third regions are formed such that the thickness of the first region (d1), the second region (d2), and the third region (d3) have a ratio of d1:d2:d3=1:0.9˜1.1:1.

Abstract: Embodiments of a light-emitting element and a light-emitting element array comprise: a light-emitting structure which includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; first and second electrodes which are disposed respectively on the first and second conductive type semiconductor layers; and an insulation layer which is disposed on the light-emitting structure exposed between the first electrode and the second electrode, wherein the second electrode comprises a light-emitting element including: a first part which overlaps with the second conductive type semiconductor layer in the thickness direction of the light-emitting structure; and a second part which extends from the first part and does not overlap with the second conductive type semiconductor layer in the thickness direction, thereby being capable of improving the productivity of a light-emitting element manufacturing process while minimizing the light leakage phenomenon between the

Abstract: The disclosed light emitting diode includes a substrate provided, at a surface thereof, with protrusions, a buffer layer formed over the entirety of the surface of the substrate, a first semiconductor layer formed over the buffer layer, an active layer formed on a portion of the first semiconductor layer, a second semiconductor layer formed over the active layer, a first electrode pad formed on another portion of the first semiconductor layer, except for the portion where the active layer is formed, and a second electrode pad formed on the second semiconductor layer. Each protrusion has a side surface inclined from the surface of the substrate at a first angle, and another side surface inclined from the surface of the substrate at a second angle different from the first angle.

Abstract: The disclosed light emitting diode includes a substrate provided, at a surface thereof, with protrusions, a buffer layer formed over the entirety of the surface of the substrate, a first semiconductor layer formed over the buffer layer, an active layer formed on a portion of the first semiconductor layer, a second semiconductor layer formed over the active layer, a first electrode pad formed on another portion of the first semiconductor layer, except for the portion where the active layer is formed, and a second electrode pad formed on the second semiconductor layer. Each protrusion has a side surface inclined from the surface of the substrate at a first angle, and another side surface inclined from the surface of the substrate at a second angle different from the first angle.

Abstract: The disclosed light emitting diode includes a substrate provided, at a surface thereof, with protrusions, a buffer layer formed over the entirety of the surface of the substrate, a first semiconductor layer formed over the buffer layer, an active layer formed on a portion of the first semiconductor layer, a second semiconductor layer formed over the active layer, a first electrode pad formed on another portion of the first semiconductor layer, except for the portion where the active layer is formed, and a second electrode pad formed on the second semiconductor layer. Each protrusion has a side surface inclined from the surface of the substrate at a first angle, and another side surface inclined from the surface of the substrate at a second angle different from the first angle.

Abstract: A semiconductor light-emitting device and a method for manufacturing the same is disclosed, which improves light extraction efficiency by forming a plurality of protrusions on a surface of a substrate for growing a nitride semiconductor material thereon, the semiconductor light-emitting device comprising a substrate; one or more first protrusions on the substrate, each first protrusion having a recess through which a surface of the substrate is exposed planarly; a first semiconductor layer on the substrate including the first protrusions; an active layer on the first semiconductor layer; a second semiconductor layer on the active layer; a first electrode on a predetermined portion of the first semiconductor layer, wherein the active layer and second semiconductor layer are not formed on the predetermined portion of the first semiconductor layer; and a second electrode on the second semiconductor layer.

Abstract: Disclosed is a method for manufacturing a semiconductor light-emitting device, which carries out a wet-etching process after a dry-etching process so as to form protrusions in a surface of a substrate for growing a nitride semiconductor material thereon.

Abstract: The disclosed light emitting diode includes a substrate provided, at a surface thereof, with protrusions, a buffer layer formed over the entirety of the surface of the substrate, a first semiconductor layer formed over the buffer layer, an active layer formed on a portion of the first semiconductor layer, a second semiconductor layer formed over the active layer, a first electrode pad formed on another portion of the first semiconductor layer, except for the portion where the active layer is formed, and a second electrode pad formed on the second semiconductor layer. Each protrusion has a side surface inclined from the surface of the substrate at a first angle, and another side surface inclined from the surface of the substrate at a second angle different from the first angle.

Abstract: Disclosed is a method for manufacturing a semiconductor light-emitting device, which carries out a wet-etching process after a dry-etching process so as to form protrusions in a surface of a substrate for growing a nitride semiconductor material thereon.

Abstract: A semiconductor light-emitting device and a method for manufacturing the same is disclosed, which improves light extraction efficiency by forming a plurality of protrusions on a surface of a substrate for growing a nitride semiconductor material thereon, the semiconductor light-emitting device comprising a substrate; one or more first protrusions on the substrate, each first protrusion having a recess through which a surface of the substrate is exposed planarly; a first semiconductor layer on the substrate including the first protrusions; an active layer on the first semiconductor layer; a second semiconductor layer on the active layer; a first electrode on a predetermined portion of the first semiconductor layer, wherein the active layer and second semiconductor layer are not formed on the predetermined portion of the first semiconductor layer; and a second electrode on the second semiconductor layer.