Abstract: A method for fabricating a 3-dimensional solenoid utilizing a CMOS fabrication technology and a back end process without using photomasking is described. In the method, two suspended arms each formed of a bi-layered metal structure from metals that have different residual stress or coefficients of thermal expansion are utilized for connecting to an inductor coil formed of AlCu in-between the two arms. When the insulating layer of silicon dioxide is removed from the suspended arms, the free ends of the arms curve up and thus, raise the inductor coil away from the surface of the semiconductor substrate into a 3-dimensional structure.

Abstract: A method for fabricating a 3-dimensional solenoid utilizing a CMOS fabrication technology and a back end process without using photomasking is described. In the method, two suspended arms each formed of a bi-layered metal structure from metals that have different residual stress or coefficients of thermal expansion are utilized for connecting to an inductor coil formed of AlCu in-between the two arms. When the insulating layer of silicon dioxide is removed from the suspended arms, the free ends of the arms curve up and thus, raise the inductor coil away from the surface of the semiconductor substrate into a 3-dimensional structure.