Abstract: A GaN series surface-emitting laser diode and a method for manufacturing the same are provided. The GaN series surface-emitting laser diode includes: an active layer; p-type and n-type material layers on the opposite sides of the active layer; a first-distributed Bragg reflector (DBR) layer formed on the n-type material layer; an n-type electrode connected to the active layer through the n-type material layer such that voltage is applied to the active layer for lasing; a spacer formed on the p-type material layer with a laser output window in a portion aligned with the first DBR layer, the spacer being thick enough to enable holes to effectively migrate to a center portion of the active layer; a second DBR layer formed on the laser output window; and a p-type electrode connected to the active layer through the p-type material layer such that voltage is applied to the active layer for lasing.

Abstract: A folder type mobile telephone and control method therefor are provided which utilize an auxiliary display unit viewable whether the folder is opened or closed. The folder type mobile telephone includes an auxiliary display unit and a main body having a main display unit. The folder type mobile telephone includes an opening at a position corresponding to the auxiliary display unit. The folder type mobile telephone may include a wheel button formed at one side of the main body to input user commands to the auxiliary display unit. A transparent window may be formed at the opening to protect the auxiliary display unit. Regardless of whether the folder is opened or closed, a user can view, and control the auxiliary display unit via wheel button inputs. Since the auxiliary display unit is formed on the main body, the relative thickness of the folder can be reduced to make the folder type mobile telephone compact.

Abstract: A GaN series surface-emitting laser diode and a method for manufacturing the same are provided. The GaN series surface-emitting laser diode includes: an active layer; p-type and n-type material layers on the opposite sides of the active layer; a first-distributed Bragg reflector (DBR) layer formed on the n-type material layer; an n-type electrode connected to the active layer through the n-type material layer such that voltage is applied to the active layer for lasing; a spacer formed on the p-type material layer with a laser output window in a portion aligned with the first DBR layer, the spacer being thick enough to enable holes to effectively migrate to a center portion of the active layer; a second DBR layer formed on the laser output window; and a p-type electrode connected to the active layer through the p-type material layer such that voltage is applied to the active layer for lasing.

Abstract: A GaN series surface-emitting laser diode and a method for manufacturing the same are provided. The GaN series surface-emitting laser diode includes: an active layer; p-type and n-type material layers on the opposite sides of the active layer; a first-distributed Bragg reflector (DBR) layer formed on the n-type material layer; an n-type electrode connected to the active layer through the n-type material layer such that voltage is applied to the active layer for lasing; a spacer formed on the p-type material layer with a laser output window in a portion aligned with the first DBR layer, the spacer being thick enough to enable holes to effectively migrate to a center portion of the active layer; a second DBR layer formed on the laser output window; and a p-type electrode connected to the active layer through the p-type material layer such that voltage is applied to the active layer for lasing.

Abstract: A method for fabricating a chip size package having a metal runner capable of preventing split generation due to stress in a solder mask made of a polymer such as BCB. The disclosed method includes steps of forming a stress buffer layer on a semiconductor chip having a plurality of bonding pads to expose a bonding pad; applying negative type photoresist on the stress buffer layer; forming a photoresist pattern having a convex cross section and defining a metal runner formative region by exposing and developing the photoresist; forming a predetermined metal layer having a height similar to that of the photoresist pattern on the metal runner formative region; removing the photoresist pattern to form a metal runner being in contact with the bonding pads of the semiconductor chip and having a concave cross section; forming a solder mask to expose a ball land of the metal runner on the stress buffer layer including the metal runner; and adhering a solder ball on the exposed ball.

Abstract: Provided is a vertical cavity surface emitting laser (VCSEL) including a feedback member which feeds a portion of light externally emitted from a resonator for generating and amplifying a laser beam, back into the resonator by reflecting the same and acts as a concave mirror for the resonator. The VCSEL operates predominantly in the single fundamental transverse mode, emitting a laser output having a peak intensity at its center. The VCSEL can be manufactured by a simple process and provides excellent reproducibility.

Abstract: A method for transmitting a SMS message including various personal information manager (PIM) information associated with one or more corresponding tags is provided. In accordance with one aspect of the invention, the method comprises: displaying a main window in response to selection from a message menu; displaying a tag selection window in response to selection of a sub menu from the main window; creating a SMS message in response to selection of one or more tags from the tag selection window; and transmitting the SMS message including the one or more selected tags to a receiving terminal, wherein the one or more tags are provided to format certain content of the SMS message when displayed.

Abstract: A method for fabricating a chip size package having a metal runner capable of preventing split generation due to stress in a solder mask made of a polymer such as BCB. The disclosed method includes steps of forming a stress buffer layer on a semiconductor chip having a plurality of bonding pads to expose a bonding pad; applying negative type photoresist on the stress buffer layer; forming a photoresist pattern having a convex cross section and defining a metal runner formative region by exposing and developing the photoresist; forming a predetermined metal layer having a height similar to that of the photoresist pattern on the metal runner formative region; removing the photoresist pattern to form a metal runner being in contact with the bonding pads of the semiconductor chip and having a concave cross section; forming a solder mask to expose a ball land of the metal runner on the stress buffer layer including the metal runner; and adhering a solder ball on the exposed ball.

Abstract: A folder type mobile telephone and control method therefor are provided which utilize an auxiliary display unit viewable whether the folder is opened or closed. The folder type mobile telephone includes an auxiliary display unit and a main body having a main display unit. The folder type mobile telephone includes an opening at a position corresponding to the auxiliary display unit. The folder type mobile telephone may include a wheel button formed at one side of the main body to input user commands to the auxiliary display unit. A transparent window may be formed at the opening to protect the auxiliary display unit. Regardless of whether the folder is opened or closed, a user can view, and control the auxiliary display unit via wheel button inputs. Since the auxiliary display unit is formed on the main body, the relative thickness of the folder can be reduced to make the folder type mobile telephone compact.

Abstract: Provided is a vertical cavity surface emitting laser (VCSEL) including a feedback member which feeds a portion of light externally emitted from a resonator for generating and amplifying a laser beam, back into the resonator by reflecting the same and acts as a concave mirror for the resonator. The VCSEL operates predominantly in the single fundamental transverse mode, emitting a laser output having a peak intensity at its center.

Abstract: A GaN series surface-emitting laser diode and a method for manufacturing the same are provided. The GaN series surface-emitting laser diode includes: an active layer; p-type and n-type material layers on opposite sides of the active layer; a first distributed Bragg reflector (DBR) layer formed on the n-type material layer; an n-type electrode connected to the active layer through the n-type material layer such that voltage is applied to the active layer for lasing; a spacer formed on the p-type material layer with a laser output window in a portion aligned with the first DBR layer, the spacer being thick enough to enable holes to effectively migrate to a center portion of the active layer; a second BDR layer formed on the laser output window; and a p-type electrode connected to the active layer through the p-type material layer such that voltage is applied to the active layer for lasing.

Abstract: A suspension system of a washing member is comprised of two rods each connected with an upper main suspensor and a lower main suspensor and a secondary suspensor disposed at adjacent ends between the individual rods. The secondary suspensor is comprised of a creased hollow cylindrical rubber casing and a sponge encompassing the rubber member. The suspension system reduces vibration of a water basket to a body.

Abstract: An arrangement of a word line driver stage for semiconductor memory device is disclosed. The present invention is characterized in that a word line driver stages are into several sub-stages WD11-WD51 within a memory cell array, and each word line extending from a first one or a second one of the sub-stages is alternatively coupled to the sub-stage adjacent thereto. Thus this arrangement is capable of reducing the signal transmission delay and eliminating the adverse factor in the current critical design rule and layout.

Abstract: Disclosed is a data transmission circuit with a higher data access time and allowing for higher chip density, used for a semiconductor memory device. A pre-amplifier connects segmented I/O lines with data I/O lines, amplifies weak voltage from the bit lines and is mounted on the strapping area of the chip so as to secure the high chip density.

Abstract: A circuit for selectively converting a color bar pattern, comprising a switching means for selectively converting the circuit to the EIA mode or SMPTE mode, a line selecting means for counting the input number of the horizontal control signal reset by means of the vertical control signal and outputting the reversed chrominance forming signal in the line on which the reversed chrominance set is to be formed and outputting the pedestal forming signal in the line on which the pedestal set is to be formed, on said SMPTE color bar pattern by combining counting value thereof with the chrominance control signal, a reversed chroma set forming means for outputting said chrominance signal as it is if the reversed chrominance forming signal is not input from the line selecting means, and for outputting said chrominance forming after converting the color signal into the converting color signal forming said reversed chroma set if the reversed chrominance forming signal is input, a pedestal position selecting means for dis

Abstract: A semiconductor integrated circuit chip has an identification circuit connected between a power voltage supply terminal and one of the input terminals of the chip. The identification circuity includes a voltage limiter to limit the input potential difference between the power voltage supply terminal and the input terminal to a predetermined voltage level. The identification circuit further includes an option device connected to the voltage limiter to provide identification information of the chip. According to the identification circuit, chip identification testing may be achieved with existing input/output and power supply terminals, thereby eliminating the need for extra test and diagnosis pins or additional identification equipment employed during testing.