Abstract: The present invention relates to a polypeptide including an Fc variant produced by substituting a portion of the amino acid sequence of the Fc domain of a human antibody with a different amino acid sequence. The present invention also relates to an antibody including the polypeptide. The Fc variant can find application in a wide range of antibodies and Fc-fusion constructs. In one aspect, the antibody or Fc fusion construct of the present invention is a therapeutic, diagnostic or laboratory reagent, preferably a therapeutic reagent. The Fc variant is suitable for use in the treatment of cancer because its in vivo half-life can be maximized by optimization of the portion of the amino acid sequence. The antibody or Fc fusion construct of the present invention is used to kill target cells that bear a target antigen, for example cancer cells. Alternatively, the antibody or Fc fusion construct of the present invention is used to block, antagonize or agonize a target antigen.

Abstract: A single poly non-volatile memory device is provided. The single poly non-volatile memory device is formed in a semiconductor substrate, and includes a sensing transistor, a selection transistor, and a capacitor, wherein a thickness of a selection gate insulating film is formed to be thicker than a thickness of a sensing gate insulating film, wherein a thickness of a control gate insulating film of the capacitor is formed to be the same, or greater than, a thickness of the sensing gate insulating film, and wherein the sensing gate of the sensing transistor and the control gate of the capacitor are physically and electrically connected to each other.

Abstract: A semiconductor device includes: a logic region and a non-volatile memory (NVM) region; a logic gate insulating film disposed on a substrate in the logic region; at least one gate oxidation acceleration ion implantation layer disposed in the NVM region; at least one NVM gate insulating film disposed on the at least one gate oxidation acceleration ion implantation layer; a logic gate electrode disposed on the logic gate insulating film; and at least one NVM gate electrode disposed on the at least one NVM gate insulating film, wherein a thickness of the at least one NVM gate insulating film is equal or greater than a thickness of the logic gate insulating film.

Abstract: Disclosed is an electronic device which includes a plurality of memory devices, a memory controller, a first signal line that makes electrical connection between the memory controller and a first branch point, a second signal line that makes electrical connection between the first branch point and a second branch point, a third signal line that makes electrical connection between the first branch point and a third branch point, a fourth signal line that electrically connects the second branch point and the first memory device, a fifth signal line that electrically connects the second branch point and the second memory device, a sixth signal line that electrically connects the third branch point and the third memory device, and a stub that includes a first end electrically connected with at least one of the plurality of signal lines, and a second end being left open-circuit.

Abstract: A non-volatile memory device, includes a source region and a drain region disposed in a channel length direction on a substrate; a flash cell, including a floating gate and a control gate, disposed between the source region and the drain region; a selection gate disposed between the source region and the flash cell; a selection line connecting the selection gate; a word line connecting the control gate; a common source line connected to the source region; and a bit line connected to the drain region.

Abstract: The present invention relates to: a composition for promoting the proliferation of pluripotent stem cells, containing, as an active ingredient, cP1P or a pharmaceutically acceptable salt thereof; and a composition added to a stem cell culture liquid. When culturing stem cells by using a composition for promoting the proliferation of stem cells and a composition added to a stem cell culture medium, according to the present invention, sternness can be strengthened, growth can be promoted, and apoptosis can be inhibited.

Abstract: A semiconductor device includes a single poly non-volatile memory device including a sensing and selection gate structure, an erase gate structure, and a control gate structure. The sensing and selection gate structure includes a sensing gate and a selection gate, a bit line, a word line disposed on the selection gate, and a tunneling gate line. The erase gate structure includes an erase gate, and an erase gate line disposed near the erase gate. The control gate structure includes a control gate disposed on the substrate, and a control gate line disposed near the control gate. The sensing gate, the selection gate, the erase gate and the control gate are connected by one conductive layer. The erase gate structure implements a PMOS capacitor, an NMOS transistor, or a PMOS transistor. The semiconductor device includes a single poly non-volatile memory device including a separate program area and erase area.

Abstract: The present invention relates to a polypeptide including an Fc variant produced by substituting a portion of the amino acid sequence of the Fc domain of a human antibody with a different amino acid sequence. The present invention also relates to an antibody including the polypeptide. The Fc variant can find application in a wide range of antibodies and Fc-fusion constructs. In one aspect, the antibody or Fc fusion construct of the present invention is a therapeutic, diagnostic or laboratory reagent, preferably a therapeutic reagent. The Fc variant is suitable for use in the treatment of cancer because its in vivo half-life can be maximized by optimization of the portion of the amino acid sequence. The antibody or Fc fusion construct of the present invention is used to kill target cells that bear a target antigen, for example cancer cells. Alternatively, the antibody or Fc fusion construct of the present invention is used to block, antagonize or agonize a target antigen.

Abstract: Disclosed are a superabsorbent polymer having improved anti-caking properties and a method of preparing the same, and the superabsorbent polymer having improved anti-caking properties includes a superabsorbent polymer, microparticles, and water, and to improve anti-caking properties of the superabsorbent polymer, the temperature of the superabsorbent polymer or water upon addition of water or the aging time upon stirring is adjusted, thereby preventing caking of the particles.

Abstract: The present disclosure relates to novel D-psicose 3-epimerase and a method for producing psicose using the same.

Abstract: Disclosed herein is an organic light emitting diode comprising a compound represented by Chemical Formula A or B and an anthracene derivative represented by Chemical Formula H. Here, Chemical Formulas A, B, and H are as described in the specification.

Abstract: The present invention relates to a carbon fiber carbonization apparatus using a microwave. The carbon fiber carbonization apparatus using a microwave comprises: a carbonization furnace into which the microwave is irradiated from an irradiation part disposed at one side thereof; a moving tube through which a carbon fiber moves along the inside thereof and which is mounted to pass through the carbonization furnace; and a heating element coupled to an outer circumferential surface of the moving tube to absorb the microwave so as to generate heat. A portion of the moving tube is covered by the heating element at the position, but a remaining portion is exposed at a position at which the heating element is coupled to the moving tube.

Abstract: Disclosed are indolocarbazole polycyclic aromatic derivatives that can be employed in various organic layers of organic electroluminescent devices. The indolocarbazole derivatives have a boron-containing structure. Also disclosed are organic electroluminescent devices including the indolocarbazole derivatives. The organic electroluminescent devices are highly efficient and long lasting and have greatly improved luminous efficiency.

Abstract: A super absorbent polymer according to the present invention has an excellent discoloration resistance characteristic even under high temperature/high humidity conditions, while maintaining excellent absorption performance, and is preferably used for hygienic materials such as diapers, and thus can exhibit excellent performance.

Abstract: Provided are a composition for preparing D-psicose comprising a microorganism of the genus Kaistia, and a method for preparing D-psicose using the same.

Abstract: The present invention relates to a superabsorbent polymer which exhibits more improved liquid permeability while maintaining excellent absorption performance, and suppresses aggregation and caking of particles even under high temperature/high humidity conditions, and to a method for producing the same. The super absorbent polymer comprises: a base polymer powder including a first crosslinked polymer of a water-soluble ethylenically unsaturated monomer having at least partially neutralized acidic groups; and a surface crosslinked layer formed on the base polymer powder and including a second cross-linked polymer in which the first cross-linked polymer is further crosslinked via a surface cross-linking agent, wherein the super absorbent polymer includes aluminum sulfate dispersed in the surface crosslinked layer and alumina dispersed on the surface crosslinked layer.

Abstract: The present application relates to a microorganism that produces allulose and a method for preparing allulose using the same.

Abstract: A thermoelectric module that has excellent thermal, electric properties, can realize high joining force between thermoelectric elements and an electrode, and can maintain stable joining even at a high temperature.

Abstract: The present application relates to a nipa palm extract preparation method and a nipa palm extract prepared by means of same.

Abstract: A thermoelectric module including at least a first and a second thermoelectric element comprising a thermoelectric semiconductor; an electrode connecting the first and second thermoelectric elements; and at least a first and a second joining layer, the first joining layer positioned between the first thermoelectric element and the electrode, and the second joining layer positioned between the second thermoelectric element and the electrode; and at least a first and a second barrier layer including an alloy including Cu, Mo and Ti, the first barrier layer positioned between the first thermoelectric element and the first joining layer, and the second barrier layer positioned between the second thermoelectric element and the second joining layer.