Patents by Inventor Su Jung YOON

Su Jung YOON has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11948947
    Abstract: A display device includes pixel circuits disposed in a display area and a driving circuit disposed in the peripheral area. The driving circuit includes a first transistor and each pixel circuit includes a second transistor. The first transistor includes a first active pattern disposed on the substrate, a first gate insulation layer having a first outer portion disposed on the first active pattern, and a first gate electrode disposed on the first gate insulation layer. The second transistor includes a second active pattern disposed on the substrate, a second gate insulation layer having a second outer portion disposed on the second active pattern, and a second gate electrode disposed on the second gate insulation layer. The first outer portion doesn't overlap the first gate electrode and has a first width. The second outer portion doesn't overlap the second gate electrode and has a second width smaller than the first width.
    Type: Grant
    Filed: June 9, 2020
    Date of Patent: April 2, 2024
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Kwang Soo Lee, Hyun Kim, Kap Soo Yoon, Su Jung Jung
  • Patent number: 11943976
    Abstract: A display device includes a substrate, a first conductive layer on the substrate, the first conductive layer including a data signal line, a first insulating layer on the first conductive layer, a semiconductor layer on the first insulating layer, the semiconductor layer including a first semiconductor pattern, a second insulating layer on the semiconductor layer, and a second conductive layer on the second insulating layer, the second conductive layer including a gate electrode disposed to overlap the first semiconductor pattern, a transistor first electrode disposed to overlap a part of the first semiconductor pattern, wherein the transistor first electrode is electrically connected to the data signal line through a contact hole that penetrates the first and second insulating layers, and a transistor second electrode disposed to overlap another part of the first semiconductor pattern.
    Type: Grant
    Filed: June 4, 2020
    Date of Patent: March 26, 2024
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Seung Sok Son, Woo Geun Lee, Seul Ki Kim, Kap Soo Yoon, Hyun Woong Baek, Jae Hyun Lee, Su Jung Jung, Jung Kyoung Cho, Seung Ha Choi, June Whan Choi
  • Patent number: 11894659
    Abstract: An embodiment relates to a surface emitting laser device and a light emitting device including the same. The surface emitting laser device according to the embodiment includes: a first emitter having a first aperture and a first insulating region; a second emitter having a second aperture and a second insulating region and disposed adjacent to the first emitter; a third emitter having a third aperture and a third insulating region and disposed adjacent to the first emitter and the second emitter; and a first trench region disposed between the first emitter and the third emitter. The first trench region is disposed inside a virtual triangle connecting a center of the first aperture of the first emitter, a center of the second aperture of the second emitter, and a center of the third aperture of the third emitter.
    Type: Grant
    Filed: August 27, 2019
    Date of Patent: February 6, 2024
    Assignee: SUZHOU LEKIN SEMICONDUCTOR CO., LTD.
    Inventors: Su Jung Yoon, Jeong Sik Lee, Yong Gyeong Lee
  • Publication number: 20210344171
    Abstract: An embodiment relates to a surface emitting laser device and a light emitting device including the same. The surface emitting laser device according to the embodiment includes: a first emitter having a first aperture and a first insulating region; a second emitter having a second aperture and a second insulating region and disposed adjacent to the first emitter; a third emitter having a third aperture and a third insulating region and disposed adjacent to the first emitter and the second emitter; and a first trench region disposed between the first emitter and the third emitter. The first trench region is disposed inside a virtual triangle connecting a center of the first aperture of the first emitter, a center of the second aperture of the second emitter, and a center of the third aperture of the third emitter.
    Type: Application
    Filed: August 27, 2019
    Publication date: November 4, 2021
    Applicant: SUZHOU LEKIN SEMICONDUCTOR CO., LTD.
    Inventors: Su Jung YOON, Jeong Sik LEE, Yong Gyeong LEE