Abstract: A transparent display device includes a base substrate having a pixel area and a transmission area, a barrier layer disposed on the base substrate, a pixel circuit disposed in the pixel area, a display structure disposed on the pixel circuit, a transmitting structure disposed in the transmission area, an adhesive layer disposed between the base substrate and the barrier layer, and between the base substrate and the transmitting structure, and a transmitting window defined in the transmission area where the transmitting structure may include a composition including silicon oxynitride, the adhesive layer may include aluminum oxide, and the transmitting window may expose a surface of the transmitting structure.

Abstract: A thin-film transistor array panel includes a gate line disposed on a first substrate, the gate line including a gate electrode, a semiconductor layer disposed on the first substrate, the semiconductor layer including an oxide semiconductor, a data wire layer disposed on the first substrate, the data wire layer including a data line crossing the gate line, a source electrode connected to the data line, and a drain electrode facing the source electrode, a capping layer disposed on the data wire layer, a tilt layer disposed on the capping layer, and a passivation layer disposed on the tilt layer, in which the tilt layer includes a silsesquioxane-based copolymer.

Abstract: A display device includes a gate line, a data line crossing the gate line, and a first transistor including a gate electrode electrically coupled to the gate line and a first electrode electrically coupled to the data line. At least one of the gate electrode of the first transistor, the first electrode of the first transistor, and a second electrode of the first transistor includes at least one of a first conductor layer and a second conductor layer. The first conductor layer includes a first metal layer and a second metal layer disposed on the first metal layer. The second conductor layer includes a third metal layer and a fourth metal layer disposed on the third metal layer. The second metal layer has a lower reflectivity than the first metal layer. The fourth metal layer has a lower reflectivity lower than the third metal layer.

Abstract: An organic light-emitting diode (OLED) display device includes a substrate; a transistor device disposed on the substrate; a first electrode electrically connected to the transistor device; an organic light-emitting layer disposed on the first electrode; and a second electrode disposed on the organic light-emitting layer. The OLED display device further includes a transflective layer contacting a lower surface of the first electrode and having a relatively higher refractive index than the first electrode.

Abstract: A thin film transistor includes a gate electrode, a semiconductor layer, and source and drain electrodes contacting the semiconductor layer. The source and drain electrodes include a metal oxide having a crystal size in a c-axis direction Lc(002) that ranges from 67 ? or more to 144 ? or less.

Abstract: In a method of manufacturing a thin film transistor substrate, a first metal layer is formed on a first surface of a base substrate. The base substrate is cooled by contacting the first metal layer with a first cooling plate and by contacting a second surface of the base substrate with a second cooling plate. The first and second surfaces of the base substrate face opposite directions. A gate electrode is formed by patterning the first metal layer. A source electrode and a drain electrode are formed. The source electrode is spaced apart from the drain electrode. The source and drain electrodes partially overlap the gate electrode. A pixel electrode electrically connected to the drain electrode is formed.

Abstract: A thin film transistor includes a gate electrode on a substrate, a main active layer in electrical connection with the gate electrode and including an exposed channel portion, a source electrode in electrical connection with the main active layer, a drain electrode which is spaced apart from the source electrode and in electrical connection with the main active layer, and a sub active layer in electrical connection to the main active layer.

Abstract: A thin film transistor includes a gate electrode on a substrate, a main active layer in electrical connection with the gate electrode and including an exposed channel portion, a source electrode in electrical connection with the main active layer, a drain electrode which is spaced apart from the source electrode and in electrical connection with the main active layer, and a sub active layer in electrical connection to the main active layer.