Abstract: Provided are a vertical GaN-based LED and a method of manufacturing the same. The vertical GaN-based LED includes an n-electrode. An AlGaN layer is formed under the n-electrode. An undoped GaN layer is formed under the AlGaN layer to provide a two-dimensional electron gas layer to a junction interface of the AlGaN layer. A GaN-based LED structure includes an n-type GaN layer, an active layer, and a p-type GaN layer that are sequentially formed under the undoped GaN layer. A p-electrode is formed under the GaN-based LED structure. A conductive substrate is formed under the p-electrode.

Abstract: A method and apparatus for setting a language in a television receiver enable one language setting operation performed in a first menu, corresponding to one of a plurality of language-specific functions, to automatically set a preferred language for one or more other functions. The method includes steps of setting a language in a first menu according to a user selection, the first menu corresponding to one function of a plurality of language-specific functions; and automatically setting a language of at least one other function of the plurality of language-specific functions to the language set according to the user selection, the language of the at least one other function being set interoperably with the first menu. Thus, if at least one language is selected in the first menu, a language of at least one other function is set to the first-menu language.

Abstract: An LCD array substrate includes a plurality of gate lines arranged in a first direction; a plurality of data lines arranged in a second direction to cross the plurality of gate lines; a semiconductor layer formed at overlapping regions of the gate lines and the data lines and extending a predetermined length from the overlapping regions over the gate lines; a drain electrode spaced apart from the overlapping regions of the gate and data lines and disposed partially in contact with the semiconductor layer, the drain electrode having ends extended beyond the semiconductor layer and the gate line; and a pair of pixel electrodes disposed on opposing sides of the gate line and electrically connected with the drain electrode.

Abstract: A liquid crystal display device includes first and second substrates facing each other, first and second column spacers on the second substrate, a protrusion on the first substrate corresponding to the first column spacer, a compensation pattern on the first substrate corresponding to a periphery of the second column spacer, and a liquid crystal layer between the first and second substrates.

Abstract: A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED can prevent the damage of an n-type GaN layer contacting an n-type electrode, thereby stably securing the contact resistance of the n-electrode. The vertical GaN-based LED includes: a support layer; a p-electrode formed on the support layer; a p-type GaN layer formed on the p-electrode; an active layer formed on the p-type GaN layer; an n-type GaN layer for an n-type electrode contact, formed on the active layer; an etch stop layer formed on the n-type GaN layer to expose a portion of the n-type GaN layer; and an n-electrode formed on the n-type GaN layer exposed by the etch stop layer.

Abstract: The present invention relates to a lighting device for display device used in vehicles, the light device including an indicator provided with a rotating shaft; a graphic plate disposed under the indicator and having a through hole formed in the center thereof, into which the rotating shaft is inserted; and an LED section that is disposed under the graphic plate, generates light onto the graphic plate, and is provided with LED chips having different colors.

Abstract: A vertical GaN-based LED includes an n-type bonding pad; an n-electrode formed under the n-type bonding pad; a light-emitting structure formed by sequentially laminating an n-type GaN layer, an active layer, and a p-type GaN layer under the n-electrode; a p-electrode formed under the light-emitting structure; and a support layer formed under the p-electrode. The light-emitting structure has or or more trenches which are spaced at a predetermined distance with the n-electrode from the outermost side of the light-emitting structure and in which the active layer of the light-emitting structure is removed.

Abstract: A vertical GaN-based LED includes: an n-type bonding pad; an n-electrode formed under the n-type bonding pad; an n-type transparent electrode formed under the n-electrode; an n-type GaN layer formed under the n-type transparent electrode; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a current blocking layer formed under a predetermined portion of the p-type GaN layer corresponding to a region where the n-electrode is formed, the current blocking layer being formed of distributed Bragg reflector (DBR); a p-electrode formed under the resulting structure where the current blocking layer is formed; and a support layer formed under the p-electrode.

Abstract: A vertical GaN-based LED includes: an n-electrode; a light-emitting structure in which an n-type GaN layer, an active layer, and a p-type GaN layer are sequentially formed under the n-electrode; a p-electrode formed under the light-emitting structure; a passivation layer formed to cover the side and bottom surfaces of the light-emitting structure and expose a predetermined portion of the p-electrode, the passivation layer being formed of a distributed Bragg reflector (DBR); a plating seed layer formed under the passivation layer and the p-electrode; and a support layer formed under the plating seed layer.

Abstract: A vertical GaN-based LED is provided. The vertical GaN-based LED includes an n-type bonding pad, an n-type reflective electrode formed under the n-type bonding pad, an n-type transparent electrode formed under the n-type reflective electrode, an n-type GaN layer formed under the n-type transparent electrode, an active layer formed under the n-type GaN layer, a p-type GaN layer formed under the active layer, a p-electrode formed under the p-type GaN layer and having an uneven profile at a surface which does not come in contact with the p-type GaN layer, a p-type reflective electrode formed along the uneven surface of the p-type electrode, and a support layer formed under the p-type reflective electrode.

Abstract: The present invention relates to a method for changing/managing channels in a broadcasting receiver and a broadcasting receiver, which are capable of selecting all parts or a part of various kinds of programs; forming a channel group consisting of channels broadcasting the selected program type(s); and performing a channel change between the channels in the channel group. The method for changing channels includes the steps of selecting all parts or a part of various kinds of programs by using a user interface unit of the broadcasting receiver; forming a channel group consisting of channels broadcasting the selected program type(s); and performing a channel change between the channels in the channel group if a channel change request is received from the user interface unit.

Abstract: Disclosed is a near infrared ray absorption film for a plasma display panel filter that includes a diimmonium-based compound and a binder resin and a plasma display panel filter and a plasma display panel having the same. The diimmonium-based compound includes substituted amine groups which are bonded to benzene rings so that charge distributions of the benzene rings are -0.104 or more.

Abstract: Provided is a composition for cancer treatment including phytosphingosine or a derivative thereof, or a pharmaceutically acceptable salt thereof as an active ingredient.

Abstract: Inductive-systems (1,2) comprising a first part in the form of a printed coil (11,21) and a second part in the form of a non-printed coil (12,22) coupled serially to each other may have a relatively large inductive-value and still be relatively small in size. The nonprinted coil (12,22) comprises an air coil. The total inductance of the inductive-system (1,2) is substantially equal to an inductance of the printed coil (11,21) plus an inductance of the air coil plus a mutual inductance, which depends on an overlapping area between the printed coil (11,21) and the air coil. One end of the non-printed coil (12) is coupled to a center end of the printed coil (11), and the other end of the nonprinted coil (12) and an outer end of the printed coil (11) constitute ends of the inductive-system (1), to couple both coils (11,12) compactly.

Abstract: Provided are a vertical GaN-based LED and a method of manufacturing the same. The vertical GaN-based LED includes an n-electrode. An AlGaN layer is formed under the n-electrode. An undoped GaN layer is formed under the AlGaN layer to provide a two-dimensional electron gas layer to a junction interface of the AlGaN layer. A GaN-based LED structure includes an n-type GaN layer, an active layer, and a p-type GaN layer that are sequentially formed under the undoped GaN layer. A p-electrode is formed under the GaN-based LED structure. A conductive substrate is formed under the p-electrode.

Abstract: A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED includes an n-electrode, a first n-type GaN layer, a first AlGaN layer, a GaN layer, a second AlGaN layer, a second n-type GaN layer, an active layer, a p-type GaN layer, and a structure support layer. The first n-type GaN layer has uneven patterns having a plurality of protuberances. The first AlGaN layer is formed under the first n-type GaN layer, and the GaN layer is formed under the first AlGaN layer. The active layer is formed under the second n-type GaN layer, and the p-type GaN layer is formed under the active layer. A p-electrode is formed under the p-type GaN layer, and the structure support layer is formed under the p-electrode.

Abstract: Refrigerator for managing food by using RFID including a plurality of storage portions divided in the refrigerator for storing food, RFID devices each having storage information of each kind of food stored in the storage portions, and controller for reading the storage information and setting up the storage portion which maintains a storage condition suitable to the storage information read thus, thereby permitting easy storage of food in a storage portion having the storage condition by using the RFID device.

Abstract: The present invention relates to a method of manufacturing a vertically-structured GaN-based light emitting diode. The method of manufacturing a vertically-structured GaN-based light emitting diode includes forming a GaN layer on a substrate; patterning the compound layer in a predetermined shape; forming an n-type GaN layer on the patterned compound layer through the epitaxial lateral over-growth process and sequentially forming an active layer and a p-type GaN layer on the n-type GaN layer; forming a structure supporting layer on the p-type GaN layer; sequentially removing the substrate and the GaN layer formed on the substrate after forming the structure supporting layer; removing the patterned compound layer exposed after removing the GaN layer so as to form an n-type GaN layer patterned in a concave shape; and forming an n-type electrode on the n-type GaN layer patterned in a concave shape.

Abstract: Method for making compensation for advertising on a display device of a home appliance including the steps of displaying a predetermined advertisement data on a display device of the home appliance, producing a display result data on a result of the display of the advertisement data, accumulating electronic cash of a predetermined amount for the user of the home appliance according to the display result data.

Abstract: The invention provides a nitride semiconductor device and a manufacturing method thereof. In the invention, n-type and p-type nitride semiconductor layers are formed on a substrate, and an active layer is formed therebetween. The n-type nitride semiconductor layers include first and second n-type GaN layers disposed in the order of distance from the active layer. In addition, in the nitride semiconductor device of the invention, an AlxGa1-xN layer, where 0<x<1, is interposed between the first and second n-type GaN layers, thereby forming a two-dimensional electron gas layer at interfaces of the first and second n-type GaN layers.