Abstract: A nucleic acid extraction composition, reagents and kits containing the same and uses thereof. Provided is a nucleic acid extraction and purification reagent free of volatile organic solvents, which prevents the damage of volatile organic solvents to people and greatly improves the timeliness of nucleic acid extraction and purification, making the operation extremely simple, and the nucleic acid can be obtained within 10 minutes. The obtained nucleic acid may be used for biological reactions such as PCR, NASBA, LAMP and RPA. Moreover, the reagents of the present disclosure may be used to extract nucleic acids of cells, bacteria, fungi, DNA viruses and RNA viruses from various samples such as blood, throat swab preserving fluid, saliva, urine, sputum, excrement and the like, and very suitable for clinical and scientific research uses.

Abstract: The present invention discloses a light detection and ranging (LIDAR) system ranging method, including: circularly allocating, by a light routing device, each periodic signal of a transmit signal to each light channel in a chronological order, monitoring a beat signal or a returned light pulse signal in each light channel, and calculating a target distance according to a frequency of the beat signal or a return delay time of the light pulse signal. The present invention further discloses a LIDAR, including: a laser source, a light routing device, an optical scanning system, a light detector, and a data processing module. A quantity of detection points per second of each beam is increased to N times, where N is a quantity of channels of the light routing device, so as to improve the detection efficiency and reduce the requirement on transmit resources; and a scanning mode and an angular resolution can be dynamically controlled according to needs.

Abstract: A training data acquisition method and device, a server and a storage medium are provided. The training data acquisition method is applied to a classifier and includes the following steps: obtaining an image search target according to an input of a user; providing images to the user according to the image search target, to display the images; and selecting at least one image from the displayed images, and determining a target-classification pair as training data according to the at least one image; where the target-classification pair includes the image search target and an entity-based classification of the at least one image.

Abstract: A nucleic acid extraction composition, reagents and kits containing the same and uses thereof. Provided is a nucleic acid extraction and purification reagent free of volatile organic solvents, which prevents the damage of volatile organic solvents to people and greatly improves the timeliness of nucleic acid extraction and purification, making the operation extremely simple, and the nucleic acid can be obtained within 10 minutes. The obtained nucleic acid may be used for biological reactions such as PCR, NASBA, LAMP and RPA. Moreover, the reagents of the present disclosure may be used to extract nucleic acids of cells, bacteria, fungi, DNA viruses and RNA viruses from various samples such as blood, throat swab preserving fluid, saliva, urine, sputum, excrement and the like, and very suitable for clinical and scientific research uses.

Abstract: The present disclosure provides a method of all-position plasma welding process for titanium alloy pipeline, which may be used for welding a titanium alloy pipeline made of TA2 or TC4, with a wall thickness of 3˜16 mm, and a pipe diameter of 108 mm or more. When the wall thickness is 3˜9 mm, a keyhole type technology may be used for one-time welding formation, and when the wall thickness is 9˜16 mm, grooving treatment needs to be performed for the pipeline, and the keyhole type technology is used for backing welding, and then filling welding and covering welding are performed using filler wire welding through a melt-in technology. The method includes following steps: S1: performing pre-welding treatment for the pipeline; S2: clamping the pipeline; S3: setting welding parameters; S4: starting the welding.

Abstract: A training data acquisition method and device, a server and a storage medium are provided. The training data acquisition method is applied to a classifier and includes the following steps: obtaining an image search target according to an input of a user; providing images to the user according to the image search target, to display the images; and selecting at least one image from the displayed images, and determining a target-classification pair as training data according to the at least one image; where the target-classification pair includes the image search target and an entity-based classification of the at least one image.

Abstract: A training data acquisition method and device, a server and a storage medium are provided. The training data acquisition method is applied to a classifier and includes the following steps: obtaining an image search target according to an input of a user; providing images to the user according to the image search target, to display the images; and selecting at least one image from the displayed images, and determining a target-classification pair as training data according to the at least one image; where the target-classification pair includes the image search target and an entity-based classification of the at least one image. Thus, more high-quality training data can be obtained, improving the performance of a classifier.

Abstract: Various embodiments of a fully integrated avalanche photodiode receiver and manufacturing method thereof are described herein. A photonic device includes a silicon-on-insulator (SOI) substrate with a buried oxide (BOX) layer therein, an avalanche photodiode integrated with the SOI substrate, a capacitor integrated with the SOI substrate, a resistor integrated with the SOI substrate, and silicon passive waveguides as well as bonding pads integrated with the SOI substrate.

Abstract: Various embodiments of a compensated photonic device structure and fabrication method thereof are described herein. In one aspect, a photonic device may include a substrate and a functional layer disposed on the substrate. The substrate may be made of a first material and the functional layer may be made of a second material that is different from the first material. The photonic device may also include a compensation region formed at an interface region between the substrate and the functional layer. The compensation region may be doped with compensation dopants such that a first carrier concentration around the interface region of function layer is reduced and a second carrier concentration in a bulk region of functional layer is reduced.

Abstract: The present disclosure provides a method of all-position plasma welding process for titanium alloy pipeline, which may be used for welding a titanium alloy pipeline made of TA2 or TC4, with a wall thickness of 3˜16 mm, and a pipe diameter of 108 mm or more. When the wall thickness is 3˜9 mm, a keyhole type technology may be used for one-time welding formation, and when the wall thickness is 9˜16 mm, grooving treatment needs to be performed for the pipeline, and the keyhole type technology is used for backing welding, and then filling welding and covering welding are performed using filler wire welding through a melt-in technology. The method includes following steps: S1: performing pre-welding treatment for the pipeline; S2: clamping the pipeline; S3: setting welding parameters; S4: starting the welding.

Abstract: Various embodiments of a compensated photonic device structure and fabrication method thereof are described herein. A photonic device may include a silicon-on-insulator (SOI) substrate with a buried oxide (BOX) layer therein, a Si waveguide and an n-type contact layer formed on the BOX layer, a Si multiplication layer disposed on the n-type contact layer, a p-type Si charge layer disposed on the Si multiplication layer, a germanium (Ge) absorption layer disposed on the p-type Si charge layer, a p-type contact layer disposed on the Ge absorption layer, and a metal layer disposed on the p-type contact layer. A compensated region may be formed between the p-type Si charge layer and the Ge absorption layer with a portion of the compensated region in the p-type Si charge layer and another portion of the compensated region in the Ge absorption layer.

Abstract: A training data acquisition method and device, a server and a storage medium are provided. The training data acquisition method is applied to a classifier and includes the following steps: obtaining an image search target according to an input of a user; providing images to the user according to the image search target, to display the images; and selecting at least one image from the displayed images, and determining a target-classification pair as training data according to the at least one image; where the target-classification pair includes the image search target and an entity-based classification of the at least one image. Thus, more high-quality training data can be obtained, improving the performance of a classifier.

Abstract: Various embodiments of a fully integrated avalanche photodiode receiver and manufacturing method thereof are described herein. A photonic device includes a silicon-on-insulator (SOI) substrate with a buried oxide (BOX) layer therein, an avalanche photodiode integrated with the SOI substrate, a capacitor integrated with the SOI substrate, a resistor integrated with the SOI substrate, and silicon passive waveguides as well as bonding pads integrated with the SOI substrate.

Abstract: Avalanche photodiodes (APDs) having at least one top stressor layer disposed on a germanium (Ge) absorption layer are described herein. The top stressor layer can increase the tensile strain of the Ge absorption layer, thus extending the absorption of APDs to longer wavelengths beyond 1550 nm. In one embodiment, the top stressor layer has a four-layer structure, including an amorphous silicon (Si) layer disposed on the Ge absorption layer; a first silicon dioxide (SiO2) layer disposed on the amorphous Si layer, a silicon nitride (SiN) layer disposed on the first SiO2 layer, and a second SiO2 layer disposed on the SiN layer. The Ge absorption layer can be further doped by p-type dopants. The doping concentration of p-type dopants is controlled such that a graded doping profile is formed within the Ge absorption layer to decrease the dark currents in APDs.

Abstract: Various embodiments of a compensated photonic device structure and fabrication method thereof are described herein. A photonic device may include a silicon-on-insulator (SOI) substrate with a buried oxide (BOX) layer therein, a Si waveguide and an n-type contact layer formed on the BOX layer, a Si multiplication layer disposed on the n-type contact layer, a p-type Si charge layer disposed on the Si multiplication layer, a germanium (Ge) absorption layer disposed on the p-type Si charge layer, a p-type contact layer disposed on the Ge absorption layer, and a metal layer disposed on the p-type contact layer. A compensated region may be formed between the p-type Si charge layer and the Ge absorption layer with a portion of the compensated region in the p-type Si charge layer and another portion of the compensated region in the Ge absorption layer.

Abstract: Various embodiments of a compensated photonic device structure and fabrication method thereof are described herein. In one aspect, a photonic device may include a substrate and a functional layer disposed on the substrate. The substrate may be made of a first material and the functional layer may be made of a second material that is different from the first material. The photonic device may also include a compensation region formed at an interface region between the substrate and the functional layer. The compensation region may be doped with compensation dopants such that a first carrier concentration around the interface region of function layer is reduced and a second carrier concentration in a bulk region of functional layer is reduced.

Abstract: Various embodiments of a compensated photonic device structure and fabrication method thereof are described herein. In one aspect, a photonic device may include a substrate and a functional layer disposed on the substrate. The substrate may be made of a first material and the functional layer may be made of a second material that is different from the first material. The photonic device may also include a compensation region formed at an interface region between the substrate and the functional layer. The compensation region may be doped with compensation dopants such that a first carrier concentration around the interface region of function layer is reduced and a second carrier concentration in a bulk region of functional layer is reduced.

Abstract: Various embodiments of a novel structure of a Ge/Si avalanche photodiode with an integrated heater, as well as a fabrication method thereof, are provided. In one aspect, a doped region is formed either on the top silicon layer or the silicon substrate layer to function as a resistor. When the environmental temperature decreases to a certain point, a temperature control loop will be automatically triggered and a proper bias is applied along the heater, thus the temperature of the junction region of a Ge/Si avalanche photodiode is kept within an optimized range to maintain high sensitivity of the avalanche photodiode and low bit-error rate level.

Abstract: A high-speed germanium on silicon (Ge/Si) avalanche photodiode may include a substrate layer, a bottom contact layer disposed on the substrate layer, a buffer layer disposed on the bottom contact layer, an electric field control layer disposed on the buffer layer, an avalanche layer disposed on the electric field control layer, a charge layer disposed on the avalanche layer, an absorption layer disposed on the charge layer, and a top contact layer disposed on the absorption layer. The electric field contact layer may be configured to control an electric field in the avalanche layer.

Abstract: Various embodiments of a germanium-on-silicon (Ge—Si) avalanche photodiode are provided. In one aspect, the Ge—Si avalanche photodiode utilizes a silicon carrier-energy-relaxation layer to reduce the energy of holes drifting into absorption layer where the absorption material has lower ionization threshold, thereby suppressing multiplication noise and increasing the gain-bandwidth product of the avalanche photodiode.