Abstract: A memory device includes a first peripheral circuit having first page buffers is functionally divided into a cell region and a connection region. A first memory cell array positioned on the first peripheral circuit includes first bit lines that are electrically connected to the first page buffers. A second memory cell array positioned on the first memory cell array includes second bit lines, which are electrically connected to the first bit lines, respectively. The first peripheral circuit is able to make use of both memory arrays using connections between the two memory arrays.

Abstract: Proposed is a transparent plastic sheet for blocking ultraviolet and infrared rays, the sheet including a base layer including a thermoplastic polymer and a skin layer provided on one or each side of the base layer and including a thermoplastic polymer, a ultraviolet blocking agent, an antioxidant, and an infrared blocking agent, in which the base layer and the skin layer are formed by a co-extrusion method.

Abstract: A compound Chemical Formula 1: wherein: each X is independently N, CH, or CD, provided that two or more of X are N, L is a single bond, or a substituted or unsubstituted C6-60 arylene, Ar1 and Ar2 are each independently a substituted or unsubstituted C6-60 aryl, Ar3 and Ar4 are each independently phenyl that is unsubstituted or substituted with at least one deuterium, any one of Ar1 to Ar4 is substituted with cyano, HAr is pyrimidinyl which is unsubstituted or substituted with 1 to 3 substituent groups each independently selected from among deuterium, a substituted or unsubstituted C1-60 alkyl, and a substituted or unsubstituted C6-60 aryl; triazinyl which is substituted with two substituted or unsubstituted C6-60 aryls; or quinazolinyl substituted with one substituted or unsubstituted C6-60 aryl, and the other substituents are as described in the specification, and an organic light emitting device comprising the same.

Abstract: A positive electrode active material includes a nickel-based lithium composite metal oxide having a Ni content of 80 atm % or greater among transition metals except lithium, and in the form of a single particle or pseudo-single particle. The nickel-based lithium composite metal oxide has a coating layer positioned on the surface thereof, wherein the coating layer contains cobalt. The positive electrode active material also satisfies [Equation 1] 1?XY/Z?3, wherein X is the molar number (mol %) of Co in the coating layer based on 100 moles of the nickel-based lithium composite metal oxide, Y is the average particle diameter (?m) of nodules of the nickel-based lithium composite metal oxide, and Z is D50 (?m) of the positive electrode active material, wherein Z is from 5 ?m to 12 ?m.

Abstract: A multi-view service providing method according to an embodiment of the present invention is performed through an apparatus including a processor and a memory, and the method comprises the steps of: (a) receiving one or more videos from one or more cameras individually capturing each artist belonging to an artist group; (b) determining a multi-view layout setting on a user's terminal for the received one or more videos; and (c) outputting the received one or more videos on the user's terminal according to the determined multi-view layout setting by the one or more processors in combination with a computing device, and the multi-view layout setting includes a first multi-view layout setting including one main video and one or more sub-videos on one screen, and a second multi-view layout setting including one or more main videos on one screen.

Abstract: The present technology relates to a semiconductor memory device and a method of manufacturing the same. The semiconductor memory device includes a first stack structure, a plurality of first slits passing through the first stack structure in a vertical direction and extending in a first horizontal direction orthogonal to the vertical direction, a first source line layer contacting an a top portion of the first stack structure, a second source line layer directly contacting the first source line layer, a second stack structure contacting the second source line layer and overlapping with the first stack structure in the vertical direction, and a plurality of second slits passing through the second stack structure in the vertical direction and extending in a second horizontal direction orthogonal to the vertical direction.

Abstract: A transceiver includes a transmitter and a receiver connected to each other through a first line and a second line. The transmitter transmits signals having a first voltage range to the first line and the second line in a first mode, and transmits signals having a second voltage range less than the first voltage range to the first line and the second line in a second mode. When transmitting a first payload to the receiver, the transmitter is sequentially driven in the first mode, the second mode, and the first mode, and the transmitter transmits a clock training pattern and the first payload in the second mode.

Abstract: Proposed is a method for providing at least one channel group by a server. The method may include in response to an interaction from a user terminal requesting creation of a channel group, creating the channel group; in response to the channel group being created. The method may also include creating a default chat channel included in the channel group. The method may further include in response to an interaction from the user terminal requesting creation of a chat channel, creating the chat channel included in the channel group.

Abstract: A display device includes a pixel electrode in a light emission area, a pixel defining layer which is on the pixel electrode and defines the light emission area, a light emitting layer and a common electrode on the pixel electrode, a bank on the pixel defining layer, the bank including a first bank layer defining a lower portion of a bank opening corresponding to the light emission area and a second bank layer which defines an upper portion of the bank opening and a tip of the bank, the tip including upper and lower surfaces of the second bank layer, a lower inorganic encapsulation layer which is on the bank and includes an inorganic pattern on the common electrode and facing and spaced apart from both the upper and lower surfaces of the tip, and an auxiliary pattern between the lower surface of the tip and the inorganic pattern.

Abstract: A cathode active material with controlled rheological properties for lithium secondary batteries. In particular, the cathode active material for a lithium secondary battery includes: a core part comprising a lithium metal oxide; and a coating layer covering at least a portion of a surface of the core part and comprising an inorganic compound.

Abstract: A method of managing identification information of a drone may include: generating an access message, wherein the access message includes an identifier for the ground identification device, which is a transmitter, an identifier for a receiver, an execution function command for classifying and defining a function to be performed, a serial number for transmitting information sequentially and retransmitting the information when transmission fails, data size information for informing a size of data to be transmitted, and transmission data; and transmitting the access message to an integrated management system corresponding to the identifier for the receiver.

Abstract: Provided is a method and an apparatus for targeting an object in a game. The method of targeting an object in a game includes: setting a center point of a first targeting area based on a first input from a user; displaying the first targeting area surrounded by a closed curve around the center point on a screen of a user terminal; displaying a list including at least one object located in the first targeting area on the screen; and moving the first targeting area based on a second input by the user received after the first input.

Abstract: A display device includes a light emitting element layer disposed on a substrate, where a plurality of emission areas is defined on the light emitting element layer, an encapsulation layer disposed on the light emitting element layer, a touch sensing layer disposed on the encapsulation layer, where the touch sensing layer includes a plurality of touch electrodes, a reflection reduction layer disposed on the touch sensing layer, and a window disposed on the reflection reduction layer. The reflection reduction layer includes a color filter layer disposed on the touch sensing layer, a bank layer disposed on the touch sensing layer between the color filter layers, a light blocking layer disposed on the bank layer, and a low refractive layer disposed on the color filter layer, and disposed adjacent to the light blocking layer.

Abstract: A semiconductor memory device includes a substrate, a mold structure including a plurality of gate electrodes and a plurality of mold insulating films alternately stacked on the substrate, a channel structure extending in a first direction and penetrating the mold structure, the channel structure including a semiconductor pattern and a ferroelectric film between the semiconductor pattern and the plurality of gate electrodes, a channel pad on the channel structure, and a bit line contact connected to the channel pad, wherein an uppermost part of the ferroelectric film protrudes beyond an uppermost gate electrode among the plurality of gate electrodes, the channel pad includes a first portion in contact with the semiconductor pattern and a second portion in contact with the first portion and the bit line contact, the first portion has a first width, and the second portion has a second width greater than the first width.

Abstract: An embodiment motor cooling apparatus includes a stator core including a plurality of metal plates made in a predetermined shape by lamination, an inlet channel formed from one side of the stator core and extending therethrough to a predetermined depth therein, a plurality of cooling channels branched from an internal end of the inlet channel and extending therefrom to either an upper side or a lower side of the stator core, and a cooling fluid supply apparatus configured to circulate cooling fluid from the inlet channel to the plurality of cooling channels.

Abstract: The present application relates to an apparatus for producing magnesium oxide, a method for producing magnesium oxide by using same, magnesium oxide produced thereby, and use of the magnesium oxide. According to the apparatus for producing magnesium oxide, the method for producing magnesium oxide by using same and the magnesium oxide produced thereby of the present application, the magnesium oxide may have high thermal conductivity at low costs, a small spherical particle size, and a dense structure. Such magnesium oxide can be used as a heat-dissipating filler.

Abstract: A display device that includes a first pixel electrode disposed on a substrate; a pixel defining layer disposed on the substrate and exposing the first pixel electrode; a first light emitting layer disposed on the first pixel electrode; a first common electrode disposed on the first light emitting layer; a first bank layer disposed on the pixel defining layer; a second bank layer disposed on the first bank layer and including a side surface protruding from a side surface of the first bank layer; and a third bank layer disposed on the second bank layer and including a side surface protruding from the side surface of the first bank layer, wherein the second bank layer and the third bank layer each include a transparent conductive oxide (TCO), and the second bank layer further includes zinc (Zn).

Abstract: A semiconductor device with a barrier layer between a gate structure and gate spacer layers, and a method of fabricating the same are disclosed. The a method includes forming a fin structure on a substrate, forming a polysilicon structure on the fin structure, performing a nitridation operation to form a barrier layer on the polysilicon structure and the fin structure, forming gate spacer layers on the barrier layer, forming a source/drain region in the fin structure and adjacent to the barrier layer, annealing the gate spacer layers, and replacing the polysilicon structure with a gate structure.