Patents by Inventor Su Ryun Min

Su Ryun Min has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for fabricating magnetic tunnel junction
    Patent number: 8685757
    Abstract: A method for fabricating a magnetic tunnel junction element includes forming a magneto resistance layer including a first magnetic layer, an insulation layer and a second magnetic layer on a substrate, forming a magnetic loss area by doping a magnetic loss impurity into a region of the magneto resistance layer to cause a magnetic loss, and etching the magnetic loss area to form a magnetic tunnel junction element.
    Type: Grant
    Filed: December 20, 2011
    Date of Patent: April 1, 2014
    Assignee: SK Hynix Inc.
    Inventors: Dong Ha Jung, Gyu An Jin, Su Ryun Min
  • MAGNETIC MEMORY DEVICE AND FABRICATION METHOD THEREOF
    Publication number: 20130032911
    Abstract: A vertical magnetic memory device includes a pinned layer including a plurality of first ferromagnetic layers that are alternately stacked with at least one first spacer, wherein the pinned layer is configured to have a vertical magnetization, a free layer including a plurality of second ferromagnetic layers that are alternately stacked with at least one second spacer, and a tunnel barrier coupled between the pinned layer and the free layer.
    Type: Application
    Filed: October 3, 2011
    Publication date: February 7, 2013
    Inventors: Dong Ha JUNG, Ki Seon PARK, Su Ryun MIN
  • METHOD FOR FABRICATING MAGNETIC TUNNEL JUNCTION
    Publication number: 20120187510
    Abstract: A method for fabricating a magnetic tunnel junction element includes forming a magneto resistance layer including a first magnetic layer, an insulation layer and a second magnetic layer on a substrate, forming a magnetic loss area by doping a magnetic loss impurity into a region of the magneto resistance layer to cause a magnetic loss, and etching the magnetic loss area to form a magnetic tunnel junction element.
    Type: Application
    Filed: December 20, 2011
    Publication date: July 26, 2012
    Inventors: Dong Ha JUNG, Gyu An Jin, Su Ryun Min