Patents by Inventor Su-Ting Han

Su-Ting Han has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9812545
    Abstract: An electronic device for data storage and a method of producing an electronic device for data storage includes a memory storage element arranged to represent two or more memory states of the electronic device; wherein the memory storage element includes a plurality of metal nanoparticles.
    Type: Grant
    Filed: October 30, 2014
    Date of Patent: November 7, 2017
    Assignee: City University of Hong Kong
    Inventors: A. L. Roy Vellaisamy, Ye Zhou, Su-Ting Han
  • Publication number: 20160126329
    Abstract: An electronic device for data storage and a method of producing an electronic device for data storage includes a memory storage element arranged to represent two or more memory states of the electronic device; wherein the memory storage element includes a plurality of metal nanoparticles.
    Type: Application
    Filed: October 30, 2014
    Publication date: May 5, 2016
    Inventors: A.L. Roy Vellaisamy, Ye Zhou, Su-Ting Han
  • Patent number: 9293571
    Abstract: This disclosure generally relates to a device with a monolayer of metal nanoparticles and a method for making the same. The nanoparticles of the monolayer of metal nanoparticles are grouped in an ultrahigh density with an average distance between each neighboring metal nanoparticle less than or equal to about 3 nanometers. The monolayer can be self-assembled on a substrate to facilitate controllable voltage shifts within the device.
    Type: Grant
    Filed: December 10, 2012
    Date of Patent: March 22, 2016
    Assignee: CITY UNIVERSITY OF HONG KONG
    Inventors: Su-Ting Han, Ye Zhou, A. L. Roy Vellaisamy
  • Patent number: 9202924
    Abstract: A semiconductor device comprising a gate electrode; an insulating layer in electrical connection with the gate electrode; a source electrode and a drain electrode; and a semiconducting channel layer configured to selectively allow electrically connection between the source electrode and the drain electrode based on the voltage on the gate electrode; wherein the semiconducting channel layer comprises metal nanoparticles; and the semiconducting channel layer is in contact with the source electrode, the drain electrode and the insulating layer. A method of manufacturing the semiconductor device of the present invention is also disclosed.
    Type: Grant
    Filed: January 6, 2014
    Date of Patent: December 1, 2015
    Assignee: NANO AND ADVANCED MATERIALS INSTITUTE LIMITED
    Inventors: Arul Lenus Roy Vellaisamy, Ye Zhou, Su Ting Han, Zong Xiang Xu
  • Publication number: 20140197405
    Abstract: A semiconductor device comprising a gate electrode; an insulating layer in electrical connection with the gate electrode; a source electrode and a drain electrode; and a semiconducting channel layer configured to selectively allow electrically connection between the source electrode and the drain electrode based on the voltage on the gate electrode; wherein the semiconducting channel layer comprises metal nanoparticles; and the semiconducting channel layer is in contact with the source electrode, the drain electrode and the insulating layer. A method of manufacturing the semiconductor device of the present invention is also disclosed.
    Type: Application
    Filed: January 6, 2014
    Publication date: July 17, 2014
    Applicant: Nano and Advanced Materials Institute Limited
    Inventors: Arul Lenus Roy Vellaisamy, Ye Zhou, Su Ting Han, Zong Xiang Xu
  • Publication number: 20140042494
    Abstract: This disclosure generally relates to a device with a monolayer of metal nanoparticles and a method for making the same. The nanoparticles of the monolayer of metal nanoparticles are grouped in an ultrahigh density with an average distance between each neighboring metal nanoparticle less than or equal to about 3 nanometers. The monolayer can be self-assembled on a substrate to facilitate controllable voltage shifts within the device.
    Type: Application
    Filed: December 10, 2012
    Publication date: February 13, 2014
    Applicant: CITY UNIVERSITY OF HONG KONG
    Inventors: Su-Ting Han, Ye Zhou, A.L. Roy Vellaisamy