Abstract: Provided is a medication dispenser configured to discharge a liquid state medication stored therein by a pumping operation in a predetermined amount in a drop state and prevent a noise occurrence during medication discharge, and having a bacteria infiltration prevention function, wherein a flow path member and a second check valve are mounted in a liner, the second check valve is composed of a hemispherical cylinder mounted in an elevation space of the liner, having an open upper part, and of which a diameter decreases toward a lower end and includes a variable part in which the hemispherical cylinder is vertically variable and an opening and closing protrusion configured to perform supply and blocking of a flow path.

Abstract: A memory device comprises a memory cell array including a first memory cell disposed on a substrate and a second memory cell above the first memory cell; a first word line connected to the first memory cell and a second word line connected to the second memory cell, the second word line disposed above the first word line; and a word line defect detection circuit configured to monitor a number of pulses of a pumping clock signal while applying a first voltage to the first word line to detect a defect of the first word line. The voltage generator is configured to apply a second voltage different from the first voltage to the second word line for programming the second memory cell when the number of pulses of the pumping clock signal is smaller than a reference value.

Abstract: Provided is a medication dispenser configured to discharge a liquid state medication stored therein by a pumping operation in a predetermined amount in a drop state and prevent a noise occurrence during medication discharge, and having a bacteria infiltration prevention function, wherein a flow path member and a second check valve are mounted in a liner, the second check valve is composed of a hemispherical cylinder mounted in an elevation space of the liner, having an open upper part, and of which a diameter decreases toward a lower end and includes a variable part in which the hemispherical cylinder is vertically variable and an opening and closing protrusion configured to perform supply and blocking of a flow path.

Abstract: The present invention relates to a microcontainer microstructure including a microcontainer film structure having a sharp tip portion and a method of manufacturing the same.

Abstract: A memory device comprises a memory cell array including a first memory cell disposed on a substrate and a second memory cell above the first memory cell; a first word line connected to the first memory cell and a second word line connected to the second memory cell, the second word line disposed above the first word line; and a word line defect detection circuit configured to monitor a number of pulses of a pumping clock signal while applying a first voltage to the first word line to detect a defect of the first word line. The voltage generator is configured to apply a second voltage different from the first voltage to the second word line for programming the second memory cell when the number of pulses of the pumping clock signal is smaller than a reference value.

Abstract: The present invention relates to a method for manufacturing a microstructure, the method comprising the steps of: (a) preparing a viscous composition on a lower substrate; and (b) applying centrifugal force to the viscous composition to induce extension of the viscous composition, thereby manufacturing a microstructure. According to the present invention, (i) a microstructure having a micro-unit diameter and sufficient effective length and hardness is provided; (ii) any process that may destroy activation of a drug or cosmetic component, such as high-temperature treatment, organic solvent treatment, etc., is avoided; (iii) loss resulting from contact and separation is reduced; (iv) the limitation of aspect ratio of the manufactured microstructure is overcome; (v) the limitation of yield resulting from flatness is overcome; and (vi) microstructures of various shapes can be manufactured.

Abstract: Provided is a structure for transdermal delivery to deliver a material to a body. The structure for transdermal delivery includes a pillar which is a first dermal infiltration part, a microstructure which is connected to an end of one side of the pillar and serves as a second dermal infiltration part. The microstructure includes a body part formed of a biodegradable viscous composition, and a connection part which includes a first contact surface having viscosity generated by a viscous composition to allow the body part to be connected to the pillar and disposed opposite the end of the one side of the pillar.

Abstract: The present invention relates to a microcontainer microstructure including a microcontainer film structure having a sharp tip portion and a method of manufacturing the same.

Abstract: A system and method for fuzzing a network application program, which use a captured packet upon fuzzing a network application program, and thus neither a protocol analysis procedure nor the production of a fuzzer program is required. The system for fuzzing a network application program includes a fuzzing performance client program unit for generating a packet to be transmitted from a captured packet, applying a fuzzing rule to the packet to be transmitted, and outputting a resulting packet. A fuzzing supervisor program unit provides the packet from the fuzzing performance client program unit to a target program to be fuzzed, monitors an event and abnormal termination of the target program to be fuzzed, and analyzes a situation of termination to verify security vulnerabilities if abnormal termination has occurred.

Abstract: A non-volatile memory device includes a first word line, a second word line, first memory cells, second memory cells, and an address decoder. The second word line is adjacent to the first word line. The first memory cells are connected to the first word line. The second memory cells are connected to the second word line. The second memory cells are connected to the first memory cells, respectively. The address decoder applies a first voltage to the first word line and applies a second voltage to the second word line in an over program period of the first memory cells. The first voltage is higher than a program voltage of the first and second memory cells. The second voltage is lower than a pass voltage of the first and second memory cells.

Abstract: To program in a nonvolatile memory device include a plurality of memory cells that are programmed into multiple states through at least two program steps, a primary program is performed from an erase level to a first target level with respect to the memory cells coupled to a selected word line A preprogram is performed from the erase level to a preprogram level in association with the primary program with respect to the memory cells coupled to the selected word line, where the preprogram level is larger than the erase level and smaller than the first target level A secondary program is performed from the preprogram level to a second target level with respect to the preprogrammed memory cells coupled to the selected word line.

Abstract: The present invention relates to a method for manufacturing a microstructure, the method comprising the steps of: (a) preparing a viscous composition on a lower substrate; and (b) applying centrifugal force to the viscous composition to induce extension of the viscous composition, thereby manufacturing a microstructure. According to the present invention, (i) a microstructure having a micro-unit diameter and sufficient effective length and hardness is provided; (ii) any process that may destroy activation of a drug or cosmetic component, such as high-temperature treatment, organic solvent treatment, etc., is avoided; (iii) loss resulting from contact and separation is reduced; (iv) the limitation of aspect ratio of the manufactured microstructure is overcome; (v) the limitation of yield resulting from flatness is overcome; and (vi) microstructures of various shapes can be manufactured.

Abstract: A nonvolatile memory device comprises multiple memory blocks each comprising multiple memory cells arranged at intersections of wordlines and bitlines, an address decoder configured to electrically connect first lines to wordlines of one of the memory blocks in response to an address, a line selection switch circuit configured to electrically connect the first lines to second lines in different configurations according to the address, a first line decoder configured to provide the second lines with wordline voltages needed for driving, and a voltage generator configured to generate the wordline voltages.

Abstract: A system and method for fuzzing a network application program, which use a captured packet upon fuzzing a network application program, and thus neither a protocol analysis procedure nor the production of a fuzzer program is required. The system for fuzzing a network application program includes a fuzzing performance client program unit for generating a packet to be transmitted from a captured packet, applying a fuzzing rule to the packet to be transmitted, and outputting a resulting packet. A fuzzing supervisor program unit provides the packet from the fuzzing performance client program unit to a target program to be fuzzed, monitors an event and abnormal termination of the target program to be fuzzed, and analyzes a situation of termination to verify security vulnerabilities if abnormal termination has occurred.

Abstract: A non-volatile memory device includes a first word line, a second word line, first memory cells, second memory cells, and an address decoder. The second word line is adjacent to the first word line. The first memory cells are connected to the first word line. The second memory cells are connected to the second word line. The second memory cells are connected to the first memory cells, respectively. The address decoder applies a first voltage to the first word line and applies a second voltage to the second word line in an over program period of the first memory cells. The first voltage is higher than a program voltage of the first and second memory cells. The second voltage is lower than a pass voltage of the first and second memory cells.

Abstract: A computing device including a display unit to display a screen, a touch input to receive a user's touch input on the display unit, and a controller to control the display unit to display at least a part of a plurality of user interface (UI) items on the screen with a predetermined degree of transparency, to scroll the UI items in a predetermined direction and to sequentially display the UI items on the screen according to the user's touch input, and to increase the degree of transparency of the UI items if the UI items are not scrolled any more.

Abstract: A three-dimensional (3D) semiconductor memory device comprises memory cell strings each comprising at least one selection transistor and at least one memory cell, a first pass transistor group sharing a first well region and comprising a first selection line pass transistor connected to the selection transistor and a first world line pass transistor connected to the memory cell, a second pass transistor group sharing a second well region and comprising a second selection line pass transistor connected to the selection transistor, and a controller that controls the first pass transistor group and the second pass transistor group. The controller applies selected voltages to the first and second well regions during read operation.

Abstract: A nonvolatile memory device comprises multiple memory blocks each comprising multiple memory cells arranged at intersections of wordlines and bitlines, an address decoder configured to electrically connect first lines to wordlines of one of the memory blocks in response to an address, a line selection switch circuit configured to electrically connect the first lines to second lines in different configurations according to the address, a first line decoder configured to provide the second lines with wordline voltages needed for driving, and a voltage generator configured to generate the wordline voltages.

Abstract: A computer including a main body in which a system is built, a peripheral device coupled to the main body, a power supplying part to supply power to the system and/or the peripheral device, an interface part to communicate with an external device, and a controller to control the power supplying part to apply power to the system but not to the peripheral device if a power-saving power applying signal is received through the interface part.

Abstract: To program in a nonvolatile memory device include a plurality of memory cells that are programmed into multiple states through at least two program steps, a primary program is performed from an erase level to a first target level with respect to the memory cells coupled to a selected word line A preprogram is performed from the erase level to a preprogram level in association with the primary program with respect to the memory cells coupled to the selected word line, where the preprogram level is larger than the erase level and smaller than the first target level A secondary program is performed from the preprogram level to a second target level with respect to the preprogrammed memory cells coupled to the selected word line.