Patents by Inventor Su-Young Kwon

Su-Young Kwon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11951804
    Abstract: An air-conditioning device for mobilities and an air-conditioning control system for mobilities using the same, which are capable of performing independent air-conditioning control for each seat when a mobility is heated and cooled, thereby preventing wastage of heating and cooling energy by performing individual air conditioning for each seat depending on whether a passenger is seated, and ensuring comfort of all passengers by providing conditioned air to each seat.
    Type: Grant
    Filed: July 18, 2022
    Date of Patent: April 9, 2024
    Assignees: HYUNDAI MOTOR COMPANY, KIA CORPORATION
    Inventors: Su Yeon Kang, Gee Young Shin, Dae Hee Lee, Myung Hoe Kim, Dong Ho Kwon
  • Publication number: 20220074049
    Abstract: The present disclosure relates to a substrate processing apparatus including: a chamber; a supporting part coupled to the chamber to support the substrate; a lid disposed on the supporting part and coupled to the chamber; a purge gas injection unit coupled to the lid to inject a purge gas to a processing space between the lid and the supporting part, for dividing the processing space into a plurality of processing regions; a shield disposed between the lid and the supporting part and coupled to the lid; a first injection unit injecting a first gas to a first processing region of the processing regions; a second injection unit injecting the first gas to the first processing region at a position apart from the first injection unit; and a first partition wall part coupled to the shield so that a first injection region disposed under the first injection unit, a second injection region disposed under the second injection unit, and a first separation space between the first injection region and the second injection
    Type: Application
    Filed: December 26, 2019
    Publication date: March 10, 2022
    Inventors: DongHyuk OH, Su-Young KWON, JongSik KIM
  • Publication number: 20190035607
    Abstract: The present disclosure relates to a substrate processing apparatus, to which a source gas and a reactant gas are distributed, including a first exhaust line exhausting a first exhaust gas including the reactant gas and the source gas which is more than the reactant gas, a second exhaust line exhausting a second exhaust gas including the source gas and the reactant gas which is more than the source gas, a catch device installed in the first exhaust line, and a third exhaust line connected to an exhaust pump to exhaust the first exhaust gas passing through the catch device and the second exhaust gas passing through the second exhaust line.
    Type: Application
    Filed: January 24, 2017
    Publication date: January 31, 2019
    Inventors: Se Young KIM, Su-Young KWON, Jin Hyuk YOO, Byoung Ha CHO, Min Ho CHEON, Chul-Joo HWANG
  • Patent number: 6879569
    Abstract: A system for controlling an international mobile telecommunications—2000 (IMT-2000) base station includes: a base transceiver station (BTS) for providing asynchronous transfer mode (ATM) cells; an asynchronous transfer mode (ATM) switch for performing a switching of the ATM cells; and a BTS interface subsystem (BIS) for interfacing the base transceiver station (BTS) with the asynchronous transfer mode (ATM) switch, wherein the BTS interface subsystem (BIS) includes a plurality of assembly symbol subsystems (ASSs) for receiving the ATM cells transmitted from the base transceiver station (BTS) and performing a type conversion of the ATM cells to output a type converted ATM cells to the asynchronous transfer mode (ATM) switch.
    Type: Grant
    Filed: December 19, 2000
    Date of Patent: April 12, 2005
    Assignee: UTStarcom Korea Limited
    Inventors: Heon-Joo Jeong, Su-Young Kwon
  • Patent number: 6472269
    Abstract: The present invention relates to a method for fabricating a capacitor of a semiconductor device to prevent an occurrence of an operational failure of a capacitor caused by the cleaning steps that follow the process of doping PH3 into an HSG. This improves the quality of the fabricated capacitor and simplifies the operational processes of manufacture. The method includes the steps of forming an insulating interlayer over a semiconductor substrate, forming a buried contact hole in the insulating interlayer to expose a predetermined portion of the semiconductor substrate, forming a lower electrode over the insulating interlayer and in the buried contact hole, performing a first cleaning process, growing an HSG on an exposed portion of the lower electrode, performing a second cleaning process, doping PH3 into the HSG, and forming a dielectric layer over the HSG and the lower electrode.
    Type: Grant
    Filed: March 14, 2002
    Date of Patent: October 29, 2002
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sun-Woo Kwak, Jung-Hun Yun, Byung-Su Koo, Su-Young Kwon
  • Publication number: 20020102792
    Abstract: The present invention relates to a method for fabricating a capacitor of a semiconductor device to prevent an occurrence of an operational failure of a capacitor caused by the cleaning steps that follow the process of doping PH3 into an HSG. This improves the quality of the fabricated capacitor and simplifies the operational processes of manufacture. The method includes the steps of forming an insulating interlayer over a semiconductor substrate, forming a buried contact hole in the insulating interlayer to expose a predetermined portion of the semiconductor substrate, forming a lower electrode over the insulating interlayer and in the buried contact hole, performing a first cleaning process, growing an HSG on an exposed portion of the lower electrode, performing a second cleaning process, doping PH3 into the HSG, and forming a dielectric layer over the HSG and the lower electrode.
    Type: Application
    Filed: March 14, 2002
    Publication date: August 1, 2002
    Inventors: Sun-Woo Kwak, Jung-Hun Yun, Byung-Su Koo, Su-Young Kwon
  • Patent number: 6391715
    Abstract: The present invention relates to a method for fabricating a capacitor of a semiconductor device to prevent an occurrence of an operational failure of a capacitor caused by the cleaning steps that follow the process of doping PH3 into an HSG. This improves the quality of the fabricated capacitor and simplifies the operational processes of manufacture. The method includes the steps of forming an insulating interlayer over a semiconductor substrate, forming a buried contact hole in the insulating interlayer to expose a predetermined portion of the semiconductor substrate, forming a lower electrode over the insulating interlayer and in the buried contact hole, performing a first cleaning process, growing an HSG on an exposed portion of the lower electrode, performing a second cleaning process, doping PH3 into the HSG, and forming a dielectric layer over the HSG and the lower electrode.
    Type: Grant
    Filed: October 27, 2000
    Date of Patent: May 21, 2002
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sun-Woo Kwak, Jung-Hun Yun, Byung-Su Koo, Su-Young Kwon
  • Publication number: 20020003800
    Abstract: A system for controlling an international mobile telecommunications - 2000 (IMT-2000) base station includes: a base transceiver station (BTS) for providing asynchronous transfer mode (ATM) cells; an asynchronous transfer mode (ATM) switch for performing a switching of the ATM cells; and a BTS interface subsystem (BIS) for interfacing the base transceiver station (BTS) with the asynchronous transfer mode (ATM) switch, wherein the BTS interface subsystem (BIS) includes a plurality of assembly symbol subsystems (ASSs) for receiving the ATM cells transmitted from the base transceiver station (BTS) and performing a type conversion of the ATM cells to output a type converted ATM cells to the asynchronous transfer mode (ATM) switch.
    Type: Application
    Filed: December 19, 2000
    Publication date: January 10, 2002
    Applicant: Hyundai Electronics Industries Co., Ltd.
    Inventors: Heon-Joo Jeong, Su-Young Kwon