Abstract: Provided is a strain sensor. The strain sensor according to embodiments of the inventive concept includes a flexible substrate, rigid patterns on the flexible substrate, the rigid patterns including a first pattern and a second pattern spaced apart from the first pattern in a first direction, a first electrode on the first pattern, a second electrode on the second pattern, the second electrode being spaced apart from the first electrode, and a piezoresistive layer connecting the first electrode and the second electrode. Here, each of the rigid patterns may have a stiffness greater than that of the flexible substrate.

Abstract: The present invention provides a stable liquid pharmaceutical formulation containing: an antibody or its antigen-binding fragment; a surfactant; a sugar or its derivative; and a buffer. The stable liquid pharmaceutical formulation according to the present invention has low viscosity while containing a high content of the antibody, has excellent long-term storage stability based on excellent stability under accelerated conditions and severe conditions, and may be administered subcutaneously.

Abstract: Disclosed are an oxidizing electrode, a water electrolysis device including the same and a method for manufacturing the same. According to exemplary embodiments of the present disclosure, there is provided an oxidizing electrode with improved performance at low loadings of noble metals, especially, ruthenium (Ru) and iridium oxide, in which a ruthenium (Ru) layer and an iridium oxide layer formed on a substrate by electrodeposition in a sequential order are supported by electrochemical reaction rather than physical bonding.

Abstract: Provided is an anticancer composition, and particularly, a pharmaceutical composition for inhibiting cancer, which includes a microRNA-30b, microRNA-133a, or microRNA-202-5p inhibitor as an active ingredient. The pharmaceutical composition may suppress microRNA-30b, microRNA-133a, or microRNA-202-5p, thereby inhibiting proliferation of cancer cells, and eventually, is expected to be useful for cancer treatment.

Abstract: Provided is an anticancer composition, and particularly, a pharmaceutical composition for inhibiting cancer, which includes a microRNA-30b, microRNA-133a, or microRNA-202-5p inhibitor as an active ingredient. The pharmaceutical composition may suppress microRNA-30b, microRNA-133a, or microRNA-202-5p, thereby inhibiting proliferation of cancer cells, and eventually, is expected to be useful for cancer treatment.

Abstract: An image sensor includes a light receiving device, a field effect transistor, a stress layer pattern, and a surface passivation material. The light receiving device is formed in a first region of a substrate. The field effect transistor is formed in a second region of the substrate. The stress layer pattern is formed over the field effect transistor for creating stress therein to improve transistor performance. The surface passivation material is formed on the first region of the substrate for passivating dangling bonds at the surface of the light receiving device.

Abstract: A semiconductor integrated circuit device includes a semiconductor substrate including a main chip region and a pad region, a multi-layer pad structure on the pad region of the semiconductor substrate, a redistribution pad through the semiconductor substrate and in contact with a bottom surface of the multi-layer pad structure, the redistribution pad being electrically connected to the multi-layer pad structure, a trench belt through the semiconductor substrate and surrounding the redistribution pad, the trench belt electrically isolating the redistribution pad and a portion of the semiconductor substrate adjacent to the redistribution pad, and a connection terminal on the redistribution pad, the connection terminal electrically connecting the redistribution pad to an external source.

Abstract: An image sensor includes a light receiving device, a field effect transistor, a stress layer pattern, and a surface passivation material. The light receiving device is formed in a first region of a substrate. The field effect transistor is formed in a second region of the substrate. The stress layer pattern is formed over the field effect transistor for creating stress therein to improve transistor performance. The surface passivation material is formed on the first region of the substrate for passivating dangling bonds at the surface of the light receiving device.

Abstract: An image sensor includes a light receiving device, a field effect transistor, a stress layer pattern, and a surface passivation material. The light receiving device is formed in a first region of a substrate. The field effect transistor is formed in a second region of the substrate. The stress layer pattern is formed over the field effect transistor for creating stress therein to improve transistor performance. The surface passivation material is formed on the first region of the substrate for passivating dangling bonds at the surface of the light receiving device.

Abstract: Disclosed are a microRNA antisense PNA capable of inhibiting the activity or function of microRNA, a composition for inhibiting the activity or function of microRNA containing the same, a method for inhibiting the activity or function of microRNA using the same, and a method for evaluating the effectiveness thereof.

Abstract: An image sensor includes a light receiving device, a field effect transistor, a stress layer pattern, and a surface passivation material. The light receiving device is formed in a first region of a substrate. The field effect transistor is formed in a second region of the substrate. The stress layer pattern is formed over the field effect transistor for creating stress therein to improve transistor performance. The surface passivation material is formed on the first region of the substrate for passivating dangling bonds at the surface of the light receiving device.

Abstract: A semiconductor integrated circuit device includes a semiconductor substrate including a main chip region and a pad region, a multi-layer pad structure on the pad region of the semiconductor substrate, a redistribution pad through the semiconductor substrate and in contact with a bottom surface of the multi-layer pad structure, the redistribution pad being electrically connected to the multi-layer pad structure, a trench belt through the semiconductor substrate and surrounding the redistribution pad, the trench belt electrically isolating the redistribution pad and a portion of the semiconductor substrate adjacent to the redistribution pad, and a connection terminal on the redistribution pad, the connection terminal electrically connecting the redistribution pad to an external source.