Abstract: The present disclosure relates to a 5G or pre-5G communication system for supporting higher data transfer rates than that of a beyond 4G communication system such as LTE. A control method of a terminal in a wireless communication system, according to an embodiment of the present invention, may comprise the steps of: receiving radio resource control signaling (RRC signaling) for a signal measured by a terminal; identifying a transmission interval of a signal measured by the terminal, on the basis of the received RRC signaling; identifying first information for forming a predetermined beam; and determining whether to change the first information for forming a beam to second information for forming a beam, on the basis of the identified transmission interval.

Abstract: A semiconductor memory devices and methods of fabricating the same are disclosed. For example, the semiconductor memory device including a semiconductor substrate including a cell area and a peripheral area, a plurality of bottom electrodes on the semiconductor substrate at the cell area, a dielectric layer conformally covering top surfaces and sidewalls of the bottom electrodes, and an upper electrode on the dielectric layer and filling between the bottom electrodes may be provided. A surface roughness of a top surface of the upper electrode may be less than a surface roughness of a side surface of the upper electrode.