Abstract: A QFN semiconductor package comprises a semiconductor die, a lead frame, bonding wires and a molding compound. The die has an upward topside with a plurality of bonding pads. The lead frame consists of a plurality of inner leads, wherein each inner lead is divided into the front finger portion, the middle protruding portion and the rare connecting portion. The front finger portion is the position of the inner lead to which a bonding wire wire-bonds from the bonding pad of the die. The rare connecting portion is for the electrical out-connection of the package. The middle protruding portion is at height level higher than the front finger portion and the rare connecting portion. The bonding wires electrically connect the bonding pads of the die with the front finger portions of inner leads by means of wire-bonding.

Abstract: A stackable QFN semiconductor package comprises a die, a lead frame, an electrical connection device, and a molding compound. The die has a plurality of bonding pads on its topside. The lead frame consists of a plurality of inner leads around edge of the die and each inner lead is divided into the body and the finger extending from the body. The body is thicker than the die and exposes its upper surface and lower surface for outer electrical connection of the package. The finger extends from the body to above the topside of the die. An electrical connection device connects the bonding pad of die and the finger of inner lead, thus electrically connect the die and the inner lead of lead frame. A molding compound seals around outer edge of the inner lead and seals off at least said electrical connection device; therefore provide ability of stack, thinner package and simplicity.