Abstract: A method for making light emitting diode includes following steps. A substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, and a second semiconductor layer is epitaxially grown on the epitaxial growth surface of the substrate in that sequence. A cermet layer is formed on the second semiconductor layer. The substrate is removed to form an exposed surface. A first electrode is applied to cover the entire exposed surface of the first semiconductor layer. A second electrode is applied to electrically connected to the second semiconductor layer.

Abstract: A method for making a light emitting diode is provided. In the method, a substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, and a second semiconductor layer are grown on the epitaxial growth surface in sequence. The first semiconductor layer, the active layer, and the second semiconductor layer constitute a source layer. A metallic plasma generating layer is then formed on a surface of the source layer away from the substrate. A first optical symmetric layer is then disposed on a surface of the metallic plasma generating layer. a second optical symmetric layer is then disposed on a surface of the first symmetric layer away from the substrate. A first electrode is applied to electrically connect the first semiconductor layer. A second electrode is applied to electrically connect the second semiconductor layer.

Abstract: A semiconductor structure includes a first semiconductor layer, an active layer, a second semiconductor layer, and a cermet layer stacked together. The active layer is on a surface of the first semiconductor layer. The second semiconductor layer is on a surface of the active layer away from the first semiconductor layer. The cermet layer is on a surface of the second semiconductor layer away from the first semiconductor layer.

Abstract: A light emitting diode includes a first semiconductor layer, an active layer, a second semiconductor layer, and a cermet layer. The active layer is on the first semiconductor layer. The second semiconductor layer is on the active layer. The cermet layer is on the second semiconductor layer. A first electrode covers entire surface of the first semiconductor layer away from the active layer. A second electrode is electrically connected to the second semiconductor layer.

Abstract: A semiconductor structure includes a first semiconductor layer, an active layer, a second semiconductor layer, a first optical symmetric layer, a metallic layer, and a second optical symmetric layer stacked in that sequence. A first effective refractive index n1 of the second optical symmetric layer, a second effective refractive index n2 of an integrated structure satisfy |n1-n2|?0.5, wherein the integrated structure includes the substrate, the first semiconductor layer, the active layer, the second semiconductor layer, and the first optical symmetric layer.

Abstract: A semiconductor structure includes a first semiconductor layer, a active layer, a second semiconductor layer, a third optical symmetric layer, a metallic layer, a fourth optical symmetric layer, and a first optical symmetric layer stacked in sequence. The first semiconductor layer, the active layer, and the second semiconductor layer constitute a source layer. A refractive index of the third optical symmetric layer or the fourth optical symmetric layer is in a range from about 1.2 to about 1.5. A refractive index difference between the source layer and the first optical symmetric layer is less than or equal to 0.3.

Abstract: A method for making a light emitting diode is provided. In the method, a substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, and a second semiconductor layer are grown on the epitaxial growth surface in series. The first semiconductor layer, the active layer, and the second semiconductor layer constitute a source layer. A metallic plasma generating layer is then formed on a surface of the source layer away from the substrate. A first optical symmetric layer is then disposed on a surface of the metallic plasma generating layer. A first electrode is applied on an exposed surface of the first semiconductor layer. A second electrode is applied to electrically connect with the second semiconductor layer.

Abstract: A light emitting diode includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a third optical symmetric layer, a metallic layer, a fourth optical symmetric layer, and a first optical symmetric layer, and a second optical symmetric layer stacked with other in the listed sequence. The light emitting diode further includes a first electrode electrically connected with the first semiconductor layer and a second electrode electrically connected with the second semiconductor layer. A refractive index of the third optical symmetric layer or the fourth optical symmetric layer is in a range from about 1.2 to about 1.5. A refractive index difference between the source layer and the first optical symmetric layer is less than or equal to 0.3. A refractive difference between the second optical symmetric layer and the substrate is less than or equal to 0.1.

Abstract: A communication signal carrier on a communication channel in a digital cable receiver can be characterized as analog without exhaustively attempting to determine a symbol rate or modulation scheme of a digital carrier. The signal level in the channel is observed at different channel bandwidths, and these observations are used to differentiate between analog and digital carriers.

Abstract: A communication system 10 includes a satellite 18 that broadcasts communication signals to a first antenna 28A and a second antenna 28B. The antenna forms a first signal and a second signal and is provided to a combiner 102. The combiner 102 is coupled to the antennas 28A and 28B and combines the first portion of the first signal and a second portion of the second signal to form an output signal 152. The output signal is received by the receiving unit 28A-28n and utilized by the receiving unit to display or otherwise use the output signal.

Abstract: A scaffold for at least one of: tissue regeneration and bone growth, the scaffold being fabricated from at least two polymers, the polymers being of differing rates of bio degradability. A first of the at least two polymers is able to be leached by a solvent, and all other polymers of the at least two polymers being either inert to the solvent or having a lower dissolution rate in the solvent. The scaffold has a graded porosity with high porosity at a surface of the scaffold, and low porosity at a core of the scaffold.

Abstract: A communication signal carrier on a communication channel in a digital cable receiver can be characterized as analog without exhaustively attempting to determine a symbol rate or modulation scheme of a digital carrier. The signal level in the channel is observed at different channel bandwidths, and these observations are used to differentiate between analog and digital carriers.

Abstract: A burn-in apparatus for burning MAC address stored a burning machine (100) onto an IC (302), which includes an isolation circuit (220), a voltage switching circuit (230) and a power switching circuit (240). The burning machine, the isolation circuit, the voltage switching circuit, and power switching circuit are serially connected and form a data transportation channel. The MAC address is transferred to the IC through the data transportation channel. The isolation circuit prevents interference between the burning machine and the IC. The voltage switching circuit supplies a high voltage to receive data for the IC to be burned. The power switching circuit supplies a working voltage for the IC. Finishing of the burning, MAC address returns to the burning machine through the data transportation channel.

Abstract: Metal-metal or metal-ceramic/carbide composite materials are fabricated by combination of powder injection molding and infiltration. This is achieved by first forming a composite system having a matrix component and an infiltrant layer. The matrix component is formed from a metal or ceramic/carbide powder, that is of a higher melting point, admixed with a first binder. The infiltrant layer is formed from a metal powder, that is of a lower melting point, admixed with a second binder. The first and second binders are subsequently removed from the composite system during a debinding process. The composite system is then heated in a sintering furnace to coalesce the matrix component into a matrix phase having a network of interconnected pores, and to effect infiltration of the infiltrant layer into these pores to form the composite material of the present invention.

Abstract: A resonant monopole slot antenna comprising a ground plane, having a radiating slot which is dimensioned such that the slot is equivalent electromagnetically to an odd number of quarter wavelengths at the antenna's operating frequency, wherein the antenna's feed is arranged at the open end of the radiating slot.

Abstract: Magnesium alloys are heated to a molten state in preparation for hot-working thereof, for example, die-casting. The presence of inclusions within the magnesium alloys results in metallurgical defects therein and will adversely affect the quality of the castings produced from the magnesium alloys. An embodiment of the invention processes the magnesium melt containing impurities through a non-reactive filter under an environment filled with protective gas for substantially purifying the magnesium melt and to reduce the presence of inclusions in castings formed therefrom.

Abstract: A method of bonding two powder components having different shrinkage factors, one of which is metal powder, is disclosed herein. In the preferred method, at step 1.1, each powder component is separately mixed with a powder binder to substantially match the other powder component's shrinkage factor. Then at steps 1.2 to 1.4, the powder component mixtures are compacted in a die set to form a green compact. Next at step 1.5, the green compact is debindered and at step 1.6, the green compact is sintered in a furnace while applying pressure on a surface of the green compact during the sintering process. In this way, the two powder components can be bonded directly without a need for an intermediate gradient zone and a double-layer metal sheet can be thus formed.