Abstract: A conversation learning service method includes registering audio uttered by a first learning participant as pronunciation content in an accent that represents the first learning participant's country of origin, ethnicity, or region; and providing a conversational text including at least two sentences in a role-playing format using the pronunciation content corresponding to the sentence.

Abstract: Provided are a coronavirus spike (S) protein-specific antibody and use thereof.

Abstract: A fusion protein including a fragment of an anti-mesothelin antibody, an anti-CD3 antibody or an anti-EGFR antibody; a bispecific antibody that is specific to mesothelin and CD3; a trispecific antibody that is specific to mesothelin, CD3 and EGFR are provided. The fusion protein is effective in treating cancer. The bispecific or trispecific antibody can be prepared in a high yield and with high purity, and has excellent tumor killing and growth inhibitory effects, and thus can be effectively used in cancer treatment.

Abstract: A semiconductor device includes standard cells disposed in a first direction parallel to an upper surface of a substrate and a second direction intersecting the first direction, each standard cell including an active region, a gate structure disposed to intersect the active region, source/drain regions on the active region at both sides of the gate structure, and first interconnection lines electrically connected to the active region and the gate structures; filler cells disposed between at least portions of the standard cells, each filler cell including a filler active region and a filler gate structure disposed to intersect the filler active region; and a routing structure disposed on the standard cells and the filler cells and including second interconnection lines electrically connecting the first interconnection lines of different standard cells to each other, wherein the second interconnection lines includes a first line having a first width and a second line having a second width larger than the first

Abstract: A semiconductor device includes standard cells disposed in a first direction parallel to an upper surface of a substrate and a second direction intersecting the first direction, each standard cell including an active region, a gate structure disposed to intersect the active region, source/drain regions on the active region at both sides of the gate structure, and first interconnection lines electrically connected to the active region and the gate structures; filler cells disposed between at least portions of the standard cells, each filler cell including a filler active region and a filler gate structure disposed to intersect the filler active region; and a routing structure disposed on the standard cells and the filler cells and including second interconnection lines electrically connecting the first interconnection lines of different standard cells to each other, wherein the second interconnection lines includes a first line having a first width and a second line having a second width larger than the first