Abstract: A Schottky diode including a semiconductor region, a first terminal comprising a metal or a metal silicide or being metallic, and a second terminal comprising at least a portion of the semiconductor region. The diode further includes an at least partly conductive material or a material capable of holding a charge in close proximity to, or in contact with, or surrounding one of the first and second terminals, a field insulator located at least partly in the semiconductor region, a dielectric region located over the semiconductor region between the field insulator and the one of the first and second terminals for isolating the conductive or charge-holding material from the semiconductor region, and wherein the dielectric region comprises insulating regions of different thicknesses.

Abstract: A Schottky diode including a semiconductor region, a first terminal comprising a metal or a metal silicide or being metallic, and a second terminal comprising at least a portion of the semiconductor region. The diode further includes an at least partly conductive material or a material capable of holding a charge in close proximity to, or in contact with, or surrounding one of the first and second terminals, a field insulator located at least partly in the semiconductor region, a dielectric region located over the semiconductor region between the field insulator and the one of the first and second terminals for isolating the conductive or charge-holding material from the semiconductor region, and wherein the dielectric region comprises insulating regions of different thicknesses.