Patents by Inventor Subash Gupta

Subash Gupta has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Restoration of CD fidelity by dissipating electrostatic charge
    Patent number: 5977542
    Abstract: An integrated circuit manufacturing process for substantially eliminating negative electrostatic charge on a wafer surface after resist processing, comprising contacting the wafer with a dilute electrolyte solution having positive ions, restores the fidelity of CD's as measured by low-voltage SEM'S.
    Type: Grant
    Filed: September 11, 1997
    Date of Patent: November 2, 1999
    Inventors: Bhanwar Singh, Subash Gupta, Bryan Choo
  • Method of making a metal oxide semiconductor (MOS) transistor polysilicon gate with a size beyond photolithography limitation by using polysilicidation and selective etching
    Patent number: 5937319
    Abstract: A method of fabricating a polysilicon gate 8 in a metal oxide semiconductor (MOS) transistor in an integrated circuit includes providing a metal layer 18, such as cobalt, on the sidewall 12 of the polysilicon gate 8, silicidizing the metal with the polysilicon in the polysilicon gate 8 to form a metal silicide sidewall 20, and removing the metal silicide sidewall 20 by etching.
    Type: Grant
    Filed: October 31, 1997
    Date of Patent: August 10, 1999
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Qi Xiang, Subash Gupta, Ming-Ren Lin
  • Integrated arc and polysilicon etching process
    Patent number: 5885902
    Abstract: A composite of an anti-reflective coating on polysilicon is accurately etched to form a polysilicon pattern by initially etching the ARC with gaseous plasma containing helium and/or nitrogen which is substantially inert with respect to polysilicon.
    Type: Grant
    Filed: November 5, 1997
    Date of Patent: March 23, 1999
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Tom Blasingame, Subash Gupta, Scott A. Bell
  • Virtual hard mask for etching
    Patent number: 5876903
    Abstract: A method of hardening photoresist (24) by bombardment with ionized particles (42), such as argon. Ionic bombardment causes formation of a hardened skin (22) on the exposed top (30) and side walls (32) of the photoresist (24). The hardened skin erodes at a reduced rate during etching and is less likely to react with products created during etching, thereby allowing etching of more accurate line widths and gaps.
    Type: Grant
    Filed: December 31, 1996
    Date of Patent: March 2, 1999
    Assignee: Advanced Micro Devices
    Inventors: Che-Hoo Ng, Bhanwar Singh, Shekhar Pramanick, Subash Gupta
  • Selective i-line BARL etch process
    Patent number: 5807790
    Abstract: A photolithographic substrate mask patterning method which enables the reduction of changes in critical dimensions which occur in prior art etching of organic photoresist and the underlying organic i-line bottom anti-reflection layer (BARL) on a non-planar substrate. Based on the minor difference in the total carbon and oxygen content between the organic photoresist and the organic BARL, a differential in polarization is achieved using a pure N.sub.2 plasma for ion etching at certain selected conditions and a selectivity is achieved between the etch rate of the organic photoresist as compared to the etch rate of the organic BARL.
    Type: Grant
    Filed: May 1, 1997
    Date of Patent: September 15, 1998
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Subash Gupta, Christopher F. Lyons
  • Integrated arc and polysilicon etching process
    Patent number: 5763327
    Abstract: A composite of an anti-reflective coating on polysilicon is accurately etched to form a polysilicon pattern by initially etching the ARC with gaseous plasma containing helium and/or nitrogen which is substantially inert with respect to polysilicon.
    Type: Grant
    Filed: November 8, 1995
    Date of Patent: June 9, 1998
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Tom Blasingame, Subash Gupta, Scott A. Bell
  • Silicon oxime film
    Patent number: 5710067
    Abstract: A silicon oxime film is formed by plasma enhanced chemical vapor deposition. The silicon oxime film is useful as an anti-reflection layer during photolithography, as an etch stop, and as a protection layer.
    Type: Grant
    Filed: June 7, 1995
    Date of Patent: January 20, 1998
    Assignee: Advanced Micro Devices, Inc.
    Inventors: David K. Foote, Subash Gupta