Patents by Inventor Subbu Tamilmani

Subbu Tamilmani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150315719
    Abstract: This disclosure enables high-productivity fabrication of semiconductor-based separation layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers), optical reflectors (made of multi-layer/multi-porosity porous semiconductors such as porous silicon), formation of porous semiconductor (such as porous silicon) for anti-reflection coatings, passivation layers, and multi-junction, multi-band-gap solar cells (for instance, by forming a variable band gap porous silicon emitter on a crystalline silicon thin film or wafer-based solar cell). Other applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation).
    Type: Application
    Filed: April 6, 2015
    Publication date: November 5, 2015
    Inventors: George D. Kamian, Somnath Nag, Subbu Tamilmani, Mehrdad M. Moslehi, Karl-Josef Kramer, Takao Yonehara
  • Patent number: 8999058
    Abstract: This disclosure enables high-productivity fabrication of semiconductor-based separation layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers), optical reflectors (made of multi-layer/multi-porosity porous semiconductors such as porous silicon), formation of porous semiconductor (such as porous silicon) for anti-reflection coatings, passivation layers, and multi-junction, multi-band-gap solar cells (for instance, by forming a variable band gap porous silicon emitter on a crystalline silicon thin film or wafer-based solar cell). Other applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation).
    Type: Grant
    Filed: May 5, 2010
    Date of Patent: April 7, 2015
    Assignee: Solexel, Inc.
    Inventors: George D. Kamian, Somnath Nag, Subbu Tamilmani, Mehrdad M. Moslehi, Karl-Josef Kramer, Takao Yonehara
  • Publication number: 20110030610
    Abstract: This disclosure enables high-productivity fabrication of semiconductor-based separation layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers), optical reflectors (made of multi-layer/multi-porosity porous semiconductors such as porous silicon), formation of porous semiconductor (such as porous silicon) for anti-reflection coatings, passivation layers, and multi-junction, multi-band-gap solar cells (for instance, by forming a variable band gap porous silicon emitter on a crystalline silicon thin film or wafer-based solar cell). Other applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation).
    Type: Application
    Filed: May 5, 2010
    Publication date: February 10, 2011
    Applicant: SOLEXEL, INC.
    Inventors: George D. Kamian, Somnath Nag, Subbu Tamilmani, Mehrdad M. Moslehi, Karl-Josef Kramer, Takao Yonehara