Abstract: A system includes a non-transitory memory and one or more hardware processors configured to perform operations including receiving, via a product model API, product model data for a product sold by a vendor, receiving from the vendor, via an offer API, offer data corresponding to one or more promotional offers for the product, processing, via a deal hub, the offer data, generating a catalog item for the product, and displaying the catalog item within a catalog.

Abstract: A system includes a non-transitory memory and one or more hardware processors configured to perform operations including generating a graphical user interface for receiving and displaying a plurality of settings of a configurable adapter and controlling a middleware instance in accordance with a configurable adapter to perform data exchange operations. The plurality of settings of the configurable adapter include a source location, a destination location, and the middleware instance. The source location includes a first field of a first table of a first platform. The destination location includes a second field of a second table of a second platform. Controlling the middleware instance includes retrieving data from the source location specified by the configurable adapter, and copying the data to a destination location specified by the configurable adapter.

Abstract: A system includes a non-transitory memory and one or more hardware processors configured to perform operations including receiving, via a product model API, product model data for a product sold by a vendor, receiving from the vendor, via an offer API, offer data corresponding to one or more promotional offers for the product, processing, via a deal hub, the offer data, generating a catalog item for the product, and displaying the catalog item within a catalog.

Abstract: An apparatus configured to remove metal etch byproducts from the surface of substrates and from the interior of a substrate processing chamber. A plasma is used in combination with a solid state light source, such as an LED, to desorb metal etch byproducts. The desorbed byproducts may then be removed from the chamber.

Abstract: An apparatus configured to remove metal etch byproducts from the surface of substrates and from the interior of a substrate processing chamber. A plasma is used in combination with a solid state light source, such as an LED, to desorb metal etch byproducts. The desorbed byproducts may then be removed from the chamber.

Abstract: The invention includes generating a plasma from a process gas for etching copper on a substrate; providing DC bias pulses to the substrate; exposing at least one of the plasma and the substrate to UV light while the DC bias pulses are provided to the substrate. Numerous other aspects are provided.

Abstract: In some embodiments, a method of forming an etch mask on a substrate is provided that includes (1) forming a resist layer on a substrate; (2) exposing one or more regions of the resist layer to an energy source so as to alter at least one of a physical property and a chemical property of the exposed regions; (3) performing a hardening process on the resist layer to increase the etch resistance of first regions of the resist layer relative to second regions of the resist layer, the hardening process including exposing the resist layer to one or more reactive species within an atomic layer deposition (ALD) chamber; and (4) dry etching the resist layer to remove the one or more second regions and to form a pattern in the resist layer. Other embodiments are provided.

Abstract: In some embodiments, a method of forming an etch mask on a substrate is provided that includes (1) forming a resist layer on a substrate; (2) exposing one or more regions of the resist layer to an energy source so as to alter at least one of a physical property and a chemical property of the exposed regions; (3) performing a hardening process on the resist layer to increase the etch resistance of first regions of the resist layer relative to second regions of the resist layer, the hardening process including exposing the resist layer to one or more reactive species within an atomic layer deposition (ALD) chamber; and (4) dry etching the resist layer to remove the one or more second regions and to form a pattern in the resist layer. Other embodiments are provided.

Abstract: An electron beam plasma source is used in a soft plasma surface treatment of semiconductor surfaces containing Ge or group III-V compound semiconductor materials.

Abstract: An apparatus configured to remove metal etch byproducts from the surface of substrates and from the interior of a substrate processing chamber. A plasma is used in combination with a solid state light source, such as an LED, to desorb metal etch byproducts. The desorbed byproducts may then be removed from the chamber.

Abstract: An apparatus configured to remove metal etch byproducts from the surface of substrates and from the interior of a substrate processing chamber. A plasma is used in combination with a solid state light source, such as an LED, to desorb metal etch byproducts. The desorbed byproducts may then be removed from the chamber.

Abstract: An electron beam plasma source is used in a soft plasma surface treatment of semiconductor surfaces containing Ge or group III-V compound semiconductor materials.

Abstract: In one aspect, a plasma etching apparatus is disclosed. The plasma etching apparatus includes a chamber body having a process chamber adapted to receive a substrate, an RF source coupled to an RF electrode, a pedestal located in the processing chamber and adapted to support a substrate, a plurality of conductive pins adapted to contact and support the substrate during processing, and a DC bias source electrically coupled to the plurality of conductive pins. Etching methods are provided, as are numerous other aspects.

Abstract: In some embodiments, a method of forming an etch mask on a substrate is provided that includes (1) forming a resist layer on a substrate; (2) exposing one or more regions of the resist layer to an energy source so as to alter at least one of a physical property and a chemical property of the exposed regions; (3) performing a hardening process on the resist layer to increase the etch resistance of first regions of the resist layer relative to second regions of the resist layer, the hardening process including exposing the resist layer to one or more reactive species within an atomic layer deposition (ALD) chamber; and (4) dry etching the resist layer to remove the one or more second regions and to form a pattern in the resist layer. Other embodiments are provided.

Abstract: In some embodiments, a plasma etching apparatus is provided for etching copper that includes (1) a chamber body having a process chamber adapted to receive a substrate; (2) an RF source coupled to an RF electrode; (3) a pedestal located in the processing chamber and adapted to support a substrate; and (4) a UV source configured to delivery UV light to the processing chamber during at least a portion of an etch process performed within the plasma etching apparatus. Numerous other aspects are provided.

Abstract: A system and method for serving reliable content in search, the method comprising: receiving at a server computer from a user, a request to search a network for certain information; searching the network for the information requested and obtaining a set of results including user-generated content; searching the user's list of social connections; determining whether any of the search results related to a person in the user's list of social connections/contacts; and providing an indication of greater reliability for the search results that correspond to persons from the user's list of social connections.

Abstract: Embodiments of the invention provide a method and apparatus, such as a processing chamber, suitable for etching high aspect ratio features. Other embodiments include a showerhead assembly for use in the processing chamber. In one embodiment, a processing chamber includes a chamber body having a showerhead assembly and substrate support disposed therein. The showerhead assembly includes at least two fluidly isolated plenums, a region transmissive to an optical metrology signal, and a plurality of gas passages formed through the showerhead assembly fluidly coupling the plenums to the interior volume of the chamber body.