Patents by Inventor Subhash KUCHANURI
Subhash KUCHANURI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230215927Abstract: A semiconductor structure is provided. The semiconductor structure includes: a substrate; discrete channel structures on the substrate in device regions; a power rail line, located in the substrate of a power rail region; a gate structure, extending across the channel structures; source/drain doped regions, located in the channel structures on two sides of the gate structure; an interlayer dielectric layer, located at a side portion of the gate structure; a power rail contact plug, penetrating a partial thickness of the interlayer dielectric layer at a top of the power rail line, the power rail contact plug is in full contact with a top surface of the power rail line in a longitudinal direction; and a source/drain contact layer, located in the interlayer dielectric layer and in contact with the source/drain doped region, on a projection surface parallel to the substrate, the source/drain contact layer extends across the power rail line.Type: ApplicationFiled: March 10, 2023Publication date: July 6, 2023Applicants: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) CorporationInventors: Jisong JIN, Subhash KUCHANURI, Abraham YOO
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Patent number: 11626497Abstract: A semiconductor structure and a forming method thereof are provided. In one form, a semiconductor structure includes: a substrate; discrete channel structures on the substrate in device regions; a power rail line, located in the substrate of a power rail region; a gate structure, extending across the channel structures; source/drain doped regions, located in the channel structures on two sides of the gate structure; an interlayer dielectric layer, located at a side portion of the gate structure; a power rail contact plug, penetrating a partial thickness of the interlayer dielectric layer at a top of the power rail line, where the power rail contact plug is in full contact with a top surface of the power rail line in a longitudinal direction; and a source/drain contact layer, located in the interlayer dielectric layer and in contact with the source/drain doped region, where on a projection surface parallel to the substrate, the source/drain contact layer extends across the power rail line.Type: GrantFiled: March 31, 2021Date of Patent: April 11, 2023Assignees: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION, SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATIONInventors: Jisong Jin, Subhash Kuchanuri, Abraham Yoo
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Publication number: 20220336344Abstract: A semiconductor device includes an insulator on a substrate and having opposite first and second sides that each extend along a first direction, a first fin pattern extending from a third side of the insulator along the first direction, a second fin pattern extending from a fourth side of the insulator along the first direction, and a first gate structure extending from the first side of the insulator along a second direction transverse to the first direction. The device further includes a second gate structure extending from the second side of the insulator along the second direction, a third fin pattern overlapped by the first gate structure, spaced apart from the first side of the insulator, and extending along the first direction, and a fourth fin pattern which overlaps the second gate structure, is spaced apart from the second side, and extends in the direction in which the second side extends.Type: ApplicationFiled: June 29, 2022Publication date: October 20, 2022Inventors: Sidharth Rastogi, Subhash KUCHANURI, Jae Seok YANG, Kwan Young CHUN
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Patent number: 11398425Abstract: A semiconductor device includes an insulator on a substrate and having opposite first and second sides that each extend along a first direction, a first fin pattern extending from a third side of the insulator along the first direction, a second fin pattern extending from a fourth side of the insulator along the first direction, and a first gate structure extending from the first side of the insulator along a second direction transverse to the first direction. The device further includes a second gate structure extending from the second side of the insulator along the second direction, a third fin pattern overlapped by the first gate structure, spaced apart from the first side of the insulator, and extending along the first direction, and a fourth fin pattern which overlaps the second gate structure, is spaced apart from the second side, and extends in the direction in which the second side extends.Type: GrantFiled: June 30, 2020Date of Patent: July 26, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sidharth Rastogi, Subhash Kuchanuri, Jae Seok Yang, Kwan Young Chun
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Publication number: 20220157957Abstract: A semiconductor structure and a forming method thereof are provided. In one form, a semiconductor structure includes: a substrate; discrete channel structures on the substrate in device regions; a power rail line, located in the substrate of a power rail region; a gate structure, extending across the channel structures; source/drain doped regions, located in the channel structures on two sides of the gate structure; an interlayer dielectric layer, located at a side portion of the gate structure; a power rail contact plug, penetrating a partial thickness of the interlayer dielectric layer at a top of the power rail line, where the power rail contact plug is in full contact with a top surface of the power rail line in a longitudinal direction; and a source/drain contact layer, located in the interlayer dielectric layer and in contact with the source/drain doped region, where on a projection surface parallel to the substrate, the source/drain contact layer extends across the power rail line.Type: ApplicationFiled: March 31, 2021Publication date: May 19, 2022Applicants: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) CorporationInventors: Jisong JIN, Subhash KUCHANURI, Abraham YOO
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Patent number: 10903213Abstract: An integrated circuit device includes a substrate including a fin active region extending in a first direction, a gate line intersecting the fin active region and extending in a second direction perpendicular to the first direction, a power line electrically connected to source/drain regions at sides of the gate line on the fin active region, a pair of dummy gate lines intersecting the fin active region and extending in the second direction, and a device separation structure electrically connected to the pair of dummy gate lines and including a lower dummy contact plug between the pair of dummy gate lines on the fin active region and electrically connected to the power line, and an upper dummy contact plug on the lower dummy contact plug and on the pair of dummy gate lines to electrically connect the lower dummy contact plug to the pair of dummy gate lines.Type: GrantFiled: June 26, 2019Date of Patent: January 26, 2021Assignee: Samsung Electronics Co., Ltd.Inventors: Sidharth Rastogi, Subhash Kuchanuri, Raheel Azmat, Pan-jae Park, Chul-hong Park, Jae-seok Yang, Kwan-young Chun
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Publication number: 20200328147Abstract: A semiconductor device includes an insulator on a substrate and having opposite first and second sides that each extend along a first direction, a first fin pattern extending from a third side of the insulator along the first direction, a second fin pattern extending from a fourth side of the insulator along the first direction, and a first gate structure extending from the first side of the insulator along a second direction transverse to the first direction. The device further includes a second gate structure extending from the second side of the insulator along the second direction, a third fin pattern overlapped by the first gate structure, spaced apart from the first side of the insulator, and extending along the first direction, and a fourth fin pattern which overlaps the second gate structure, is spaced apart from the second side, and extends in the direction in which the second side extends.Type: ApplicationFiled: June 30, 2020Publication date: October 15, 2020Inventors: Sidharth Rastogi, Subhash KUCHANURI, Jae Seok YANG, Kwan Young CHUN
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Patent number: 10699998Abstract: A semiconductor device includes an insulator on a substrate and having opposite first and second sides that each extend along a first direction, a first fin pattern extending from a third side of the insulator along the first direction, a second fin pattern extending from a fourth side of the insulator along the first direction, and a first gate structure extending from the first side of the insulator along a second direction transverse to the first direction. The device further includes a second gate structure extending from the second side of the insulator along the second direction, a third fin pattern overlapped by the first gate structure, spaced apart from the first side of the insulator, and extending along the first direction, and a fourth fin pattern which overlaps the second gate structure, is spaced apart from the second side, and extends in the direction in which the second side extends.Type: GrantFiled: March 27, 2018Date of Patent: June 30, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sidharth Rastogi, Subhash Kuchanuri, Jae Seok Yang, Kwan Young Chun
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Patent number: 10546855Abstract: Integrated circuit devices are provided. The IC devices may include an active region extending in a first direction, first and second gate electrodes extending in a second direction, a first impurity region in the active region adjacent a first side of the first gate electrode, a second impurity region in the active region between a second side of the first gate electrode and a first side of the second gate electrode, a third impurity region in the active region adjacent a second side of the second gate electrode, a cross gate contact electrically connecting the first and second impurity regions, a first contact electrically connected to the third impurity region, a first wire electrically connected to the cross gate contact, and a second wire electrically connected to the first contact. The first and second wires may extend only in the first direction and may be on the same line.Type: GrantFiled: March 30, 2017Date of Patent: January 28, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Rajeev Ranjan, Deepak Sharma, Subhash Kuchanuri, Chul Hong Park, Jae Seok Yang, Kwan Young Chun
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Patent number: 10474783Abstract: A method of designing a layout of a semiconductor device includes designing layouts of cells, each layout including first conductive lines, the first conductive lines extending in a first direction and being spaced apart from each other in a second direction crossing the first direction, disposing the layouts of the cells to be adjacent to each other in the first direction, such that the first conductive lines in adjacent layouts of the cells are connected to each other, and disposing insulation blocks at a boundary area between adjacent ones of the layouts of the cells or in areas of the layouts of the cells adjacent to the boundary area, such that the insulation blocks block connections between some of the first conductive lines.Type: GrantFiled: September 12, 2017Date of Patent: November 12, 2019Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sidharth Rastogi, Subhash Kuchanuri, Chul-Hong Park, Jae-Seok Yang
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Publication number: 20190326285Abstract: An integrated circuit device includes a substrate including a fin active region extending in a first direction, a gate line intersecting the fin active region and extending in a second direction perpendicular to the first direction, a power line electrically connected to source/drain regions at sides of the gate line on the fin active region, a pair of dummy gate lines intersecting the fin active region and extending in the second direction, and a device separation structure electrically connected to the pair of dummy gate lines and including a lower dummy contact plug between the pair of dummy gate lines on the fin active region and electrically connected to the power line, and an upper dummy contact plug on the lower dummy contact plug and on the pair of dummy gate lines to electrically connect the lower dummy contact plug to the pair of dummy gate lines.Type: ApplicationFiled: June 26, 2019Publication date: October 24, 2019Inventors: Sidharth RASTOGI, Subhash KUCHANURI, Raheel AZMAT, Pan-jae PARK, Chul-hong PARK, Jae-seok YANG, Kwan-young CHUN
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Patent number: 10361198Abstract: An integrated circuit device includes a substrate including a fin active region extending in a first direction, a gate line intersecting the fin active region and extending in a second direction perpendicular to the first direction, a power line electrically connected to source/drain regions at sides of the gate line on the fin active region, a pair of dummy gate lines intersecting the fin active region and extending in the second direction, and a device separation structure electrically connected to the pair of dummy gate lines and including a lower dummy contact plug between the pair of dummy gate lines on the fin active region and electrically connected to the power line, and an upper dummy contact plug on the lower dummy contact plug and on the pair of dummy gate lines to electrically connect the lower dummy contact plug to the pair of dummy gate lines.Type: GrantFiled: May 24, 2017Date of Patent: July 23, 2019Assignee: Samsung Electronics Co., Ltd.Inventors: Sidharth Rastogi, Subhash Kuchanuri, Raheel Azmat, Pan-jae Park, Chul-hong Park, Jae-seok Yang, Kwan-young Chun
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Publication number: 20190080998Abstract: A semiconductor device includes an insulator on a substrate and having opposite first and second sides that each extend along a first direction, a first fin pattern extending from a third side of the insulator along the first direction, a second fin pattern extending from a fourth side of the insulator along the first direction, and a first gate structure extending from the first side of the insulator along a second direction transverse to the first direction. The device further includes a second gate structure extending from the second side of the insulator along the second direction, a third fin pattern overlapped by the first gate structure, spaced apart from the first side of the insulator, and extending along the first direction, and a fourth fin pattern which overlaps the second gate structure, is spaced apart from the second side, and extends in the direction in which the second side extends.Type: ApplicationFiled: March 27, 2018Publication date: March 14, 2019Inventors: Sidharth Rastogi, Subhash KUCHANURI, Jae Seok YANG, Kwan Young CHUN
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Patent number: 10147684Abstract: An integrated circuit device includes: a pair of reference conductive lines arranged in parallel in a first direction in a first version logic cell and a pair of swap conductive lines arranged in parallel in a second version logic cell, wherein one reference conductive line and one swap conductive line in different wiring tracks of the pair of reference conductive lines and the pair of swap conductive lines have the same planar shape and the same length, and extend to intersect a cell boundary between the first version logic cell and the second version logic cell.Type: GrantFiled: November 16, 2017Date of Patent: December 4, 2018Assignee: Samsung Electronics Co., Ltd.Inventors: Subhash Kuchanuri, Sidharth Rastogi, Ranjan Rajeev, Chul-hong Park, Jae-seok Yang
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Publication number: 20180342462Abstract: An integrated circuit device includes: a pair of reference conductive lines arranged in parallel in a first direction in a first version logic cell and a pair of swap conductive lines arranged in parallel in a second version logic cell, wherein one reference conductive line and one swap conductive line in different wiring tracks of the pair of reference conductive lines and the pair of swap conductive lines have the same planar shape and the same length, and extend to intersect a cell boundary between the first version logic cell and the second version logic cell.Type: ApplicationFiled: November 16, 2017Publication date: November 29, 2018Inventors: Subhash KUCHANURI, Sidharth RASTOGI, Ranjan RAJEEV, Chul-hong PARK, Jae-seok YANG
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Publication number: 20180157781Abstract: A method of designing a layout of a semiconductor device includes designing layouts of cells, each layout including first conductive lines, the first conductive lines extending in a first direction and being spaced apart from each other in a second direction crossing the first direction, disposing the layouts of the cells to be adjacent to each other in the first direction, such that the first conductive lines in adjacent layouts of the cells are connected to each other, and disposing insulation blocks at a boundary area between adjacent ones of the layouts of the cells or in areas of the layouts of the cells adjacent to the boundary area, such that the insulation blocks block connections between some of the first conductive lines.Type: ApplicationFiled: September 12, 2017Publication date: June 7, 2018Inventors: Sidharth RASTOGI, Subhash KUCHANURI, Chul-Hong PARK, Jae-Seok YANG
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Publication number: 20180102364Abstract: An integrated circuit device includes a substrate including a fin active region extending in a first direction, a gate line intersecting the fin active region and extending in a second direction perpendicular to the first direction, a power line electrically connected to source/drain regions at sides of the gate line on the fin active region, a pair of dummy gate lines intersecting the fin active region and extending in the second direction, and a device separation structure electrically connected to the pair of dummy gate lines and including a lower dummy contact plug between the pair of dummy gate lines on the fin active region and electrically connected to the power line, and an upper dummy contact plug on the lower dummy contact plug and on the pair of dummy gate lines to electrically connect the lower dummy contact plug to the pair of dummy gate lines.Type: ApplicationFiled: May 24, 2017Publication date: April 12, 2018Inventors: Sidharth RASTOGI, Subhash KUCHANURI, Raheel AZMAT, Pan-jae PARK, Chul-hong PARK, Jae-seok YANG, Kwan-young CHUN
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Publication number: 20180090492Abstract: Integrated circuit devices are provided. The IC devices may include an active region extending in a first direction, first and second gate electrodes extending in a second direction, a first impurity region in the active region adjacent a first side of the first gate electrode, a second impurity region in the active region between a second side of the first gate electrode and a first side of the second gate electrode, a third impurity region in the active region adjacent a second side of the second gate electrode, a cross gate contact electrically connecting the first and second impurity regions, a first contact electrically connected to the third impurity region, a first wire electrically connected to the cross gate contact, and a second wire electrically connected to the first contact. The first and second wires may extend only in the first direction and may be on the same line.Type: ApplicationFiled: March 30, 2017Publication date: March 29, 2018Inventors: Rajeev RANJAN, Deepak SHARMA, Subhash KUCHANURI, Chul Hong PARK, Jae Seok YANG, Kwan Young CHUN