Abstract: The invention relates to a method (110) for producing an electrically conductive connection (112, 112?) on a substrate (114), comprising the following steps: a) providing a substrate (114), wherein the substrate (114) is configured for receiving an electrically conductive connection (112, 112?); b) providing a reservoir of an electrically conductive liquid alloy, wherein the reservoir has a surface at which the alloy has an insulating layer; c) providing a capillary (120) configured for taking up the electrically conductive liquid alloy; d) penetrating of a tip (122) of the capillary (120) under the surface of the reservoir and taking up of a portion of the alloy from the reservoir; and e) applying the portion of the alloy at least partly to the substrate (114) in such a manner that an electrically conductive connection (112, 112?) is formed from the alloy on the substrate (114), wherein the alloy remains on the substrate (114) by adhesion.

Abstract: The invention relates to a method (110) for producing an electrically conductive connection (112, 112?) on a substrate (114), comprising the following steps: a) providing a substrate (114), wherein the substrate (114) is configured for receiving an electrically conductive connection (112, 112?); b) providing a reservoir of an electrically conductive liquid alloy, wherein the reservoir has a surface at which the alloy has an insulating layer; c) providing a capillary (120) configured for taking up the electrically conductive liquid alloy; d) penetrating of a tip (122) of the capillary (120) under the surface of the reservoir and taking up of a portion of the alloy from the reservoir; and e) applying the portion of the alloy at least partly to the substrate (114) in such a manner that an electrically conductive connection (112, 112?) is formed from the alloy on the substrate (114), wherein the alloy remains on the substrate (114) by adhesion.

Abstract: An electromechanically-gated field-effect transistor includes an arrangement which is placed on top of a substrate. The arrangement includes a first electrode, a second electrode, a transistor channel, an electrolyte, and a gate electrode. The first electrode is placed on top of the substrate and including a first solid or porous metallic conducting body, a second electrode. The second electrode is placed on top of a transistor channel so as to at least partially cover the transistor channel. The transistor channel, which includes a porous semiconducting material, is placed on top of the first electrode so as to at least partially cover the first electrode and located between the first electrode and the second electrode in a manner to prevent any direct electrical contact between the first electrode and the second electrode.

Abstract: An electrochemically-gated field-effect transistor includes a source electrode, a drain electrode, a gate electrode, a transistor channel and an electrolyte. The transistor channel is located between the source electrode and the drain electrode. The electrolyte completely covers the transistor channel and has a one-dimensional nanostructure and a solid polymer-based electrolyte that is employed as the electrolyte.

Abstract: In one embodiment, a tunable resistor/transistor includes a porous material that is electrically coupled between a source electrode and a drain electrode, wherein the porous material acts as an active channel, an electrolyte solution saturating the active channel, the electrolyte solution being adapted for altering an electrical resistance of the active channel based on an applied electrochemical potential, wherein the active channel comprises nanoporous carbon arranged in a three-dimensional structure. In another embodiment, a method for forming the tunable resistor/transistor includes forming a source electrode, forming a drain electrode, and forming a monolithic nanoporous carbon material that acts as an active channel and selectively couples the source electrode to the drain electrode electrically.