Patents by Inventor Subin Jin

Subin Jin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250391771
    Abstract: An integrated circuit includes a first standard cell including a first plurality of patterns extending in a first direction, the first standard cell having a first pitch; a second standard cell including a second plurality of patterns extending in the first direction, the second standard cell having a second pitch different from the first pitch, the second standard cell spaced apart from the first standard cell in the first direction; a signal transfer filler cell between the first standard cell and the second standard cell, the signal transfer filler cell including at least one jog pattern connecting one pattern in the first plurality of patterns to one pattern in the second plurality of patterns; a first power rail having a first width in a second direction perpendicular to the first direction above the first standard cell; and a second power rail having a second width different from the first width.
    Type: Application
    Filed: January 14, 2025
    Publication date: December 25, 2025
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jaeha LEE, Huijae LIM, Subin Jin, Unseon CHEON
  • Publication number: 20250288807
    Abstract: The present invention relates to a rehabilitation assistive device utilizing wireless electrical stimulation based on a high-frequency induction coil and conductive hydrogel. Specifically, the present invention concerns a nerve regeneration device using wireless electrical stimulation, which is based on the phenomenon where current is induced within the conductive hydrogel by the electromagnetic waves generated from a coil carrying high-frequency alternating current. The present invention can be applied as a nerve regeneration-promoting system, wherein conductive hydrogel is injected into the damaged area of the subject's nerve tissue using the wireless electrical stimulation device, thereby aiding in nerve regeneration.
    Type: Application
    Filed: March 11, 2025
    Publication date: September 18, 2025
    Inventors: MIKYUNG SHIN, Donghee Son, Subin Jin, Sungjun Yoon, Jong Woong PARK
  • Publication number: 20250195882
    Abstract: The present disclosure relates to a muscle or nerve function rehabilitation assistance device using electrically conductive hydrogel. The electrically conductive hydrogel (IT-IC) provides an electrophysiological interface function between electrically active tissues, enabling the filling of lost muscle or nerve tissue for immediate rehabilitation in the early stages. It facilitates electrophysiological signal transmission between tissues and accelerates myofiber regeneration during the recovery phase. Particularly, when the electrically conductive hydrogel (IT-IC) is applied, the transmission of electrical signals generated in the muscle can be precisely controlled by a closed-loop device capable of being feedback in conjunction with peripheral nerve stimulation and electromyogram (EMG) monitoring.
    Type: Application
    Filed: December 13, 2024
    Publication date: June 19, 2025
    Applicant: Research & Business Foundation Sungkyunkwan University
    Inventors: Mikyung SHIN, Donghee SON, Subin JIN, Heewon CHOI
  • Patent number: 11756949
    Abstract: An integrated circuit includes at least one decoupling cell, wherein the at least one decoupling cell includes at least one P-type decoupling MOSFET and at least one N-type decoupling MOSFET, and a number of the at least one P-type decoupling MOSFET is different from a number of the at least one N-type decoupling MOSFET.
    Type: Grant
    Filed: April 30, 2021
    Date of Patent: September 12, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sungwe Cho, Subin Jin
  • Patent number: 11355489
    Abstract: A semiconductor device includes a standard cell, which includes first to fourth active areas that are extended in a first direction, first to fourth gate lines that are extended in a second direction perpendicular to the first direction over the first to fourth active areas and are disposed parallel to each other, a first cutting layer that is disposed between the first active area and the second active area and separates the second and third gate lines, a second cutting layer that is disposed between the third active area and the fourth active area and separates the second and third gate lines, a first gate contact that is formed on the second gate line separated by the first cutting layer and the second cutting layer, and a second gate contact that is formed on the third gate line separated by the first cutting layer and the second cutting layer.
    Type: Grant
    Filed: September 2, 2020
    Date of Patent: June 7, 2022
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Byounggon Kang, Subin Jin, Ha-Young Kim
  • Publication number: 20220102336
    Abstract: An integrated circuit includes at least one decoupling cell, wherein the at least one decoupling cell includes at least one P-type decoupling MOSFET and at least one N-type decoupling MOSFET, and a number of the at least one P-type decoupling MOSFET is different from a number of the at least one N-type decoupling MOSFET.
    Type: Application
    Filed: April 30, 2021
    Publication date: March 31, 2022
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sungwe CHO, Subin JIN
  • Publication number: 20210210479
    Abstract: A semiconductor device includes a standard cell, which includes first to fourth active areas that are extended in a first direction, first to fourth gate lines that are extended in a second direction perpendicular to the first direction over the first to fourth active areas and are disposed parallel to each other, a first cutting layer that is disposed between the first active area and the second active area and separates the second and third gate lines, a second cutting layer that is disposed between the third active area and the fourth active area and separates the second and third gate lines, a first gate contact that is formed on the second gate line separated by the first cutting layer and the second cutting layer, and a second gate contact that is formed on the third gate line separated by the first cutting layer and the second cutting layer.
    Type: Application
    Filed: September 2, 2020
    Publication date: July 8, 2021
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Byounggon KANG, Subin JIN, Ha-Young KIM
  • Patent number: D766975
    Type: Grant
    Filed: August 6, 2015
    Date of Patent: September 20, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Serrah Lim, Subin Jin
  • Patent number: D767631
    Type: Grant
    Filed: August 26, 2015
    Date of Patent: September 27, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Serrah Lim, Subin Jin