Abstract: The present disclosure is directed to an electrostatic charge measurement tool and dedicated system having a probe configured to scan the surface of a target, and methods for taking the electrostatic charge measurements. In an aspect, the probe is a non-contact electrostatic probe that may be moveable across the surface of the target and be adjustable in its height from the surface of the target. In another aspect, the target is an electrostatic chuck or semiconductor wafer. In a further aspect, the electrostatic charge measurement system may perform insitu measurement of targets without removing them from their working environment.

Abstract: The present disclosure is directed to an electrostatic charge measurement tool and dedicated system having a probe configured to scan the surface of a target, and methods for taking the electrostatic charge measurements. In an aspect, the probe is a non-contact electrostatic probe that may be moveable across the surface of the target and be adjustable in its height from the surface of the target. In another aspect, the target is an electrostatic chuck or semiconductor wafer. In a further aspect, the electrostatic charge measurement system may perform insitu measurement of targets without removing them from their working environment.

Abstract: The present disclosure is directed to a trap filter system having a plurality of filters, the plurality of filters having filtering materials to remove contaminants from a flow of gas effluents generated by a semiconductor processing tool and a bypass mechanism configured to selectively direct or shut off the flow of gas effluents to one or more of the plurality of filters while the semiconductor processing tool remains in operation. Each of the plurality of filters is removable and replaceable when the filtering material is unable to effectuate the removal of contaminants.

Abstract: The present disclosure is directed to a manifold assembly for a trap filter system having an inlet for receiving a flow of gas effluents containing contaminants generated by a semiconductor processing tool, a housing for a plurality of filters, wherein the plurality of trap filters connected to the inlet and are interchangeable while the semiconductor processing tool remains in operation, and a bypass mechanism configured to selectively direct or shut off the flow of gas effluent to one or more of the plurality of trap filters, wherein each of the plurality of filter is removable and replaceable when the filter is unable to effectuate the removal of contaminants.

Abstract: Embodiments described herein include a susceptor for semiconductor processing including an oriented graphite plate that may have a thickness of at least 1 mm. The susceptor may have a support member, and the oriented graphite plate may be disposed on the support member. The support member may have a center thermal conduit and an edge thermal conduit, and may be substantially solid between the center thermal conduit and the edge thermal conduit.

Abstract: Embodiments described herein include a susceptor for semiconductor processing including an oriented graphite plate that may have a thickness of at least 1 mm. The susceptor may have a support member, and the oriented graphite plate may be disposed on the support member. The support member may have a center thermal conduit and an edge thermal conduit, and may be substantially solid between the center thermal conduit and the edge thermal conduit.

Abstract: Embodiments described herein include a susceptor for semiconductor processing including an oriented graphite plate that may have a thickness of at least 1 mm. The susceptor may have a support member, and the oriented graphite plate may be disposed on the support member. The support member may have a center thermal conduit and an edge thermal conduit, and may be substantially solid between the center thermal conduit and the edge thermal conduit.

Abstract: Embodiments described herein include a susceptor for semiconductor processing including an oriented graphite plate that may have a thickness of at least 1 mm. The susceptor may have a support member, and the oriented graphite plate may be disposed on the support member. The support member may have a center thermal conduit and an edge thermal conduit, and may be substantially solid between the center thermal conduit and the edge thermal conduit.

Abstract: In some embodiments, a system includes (1) a controller configured to receive information regarding substrate uniformity; (2) a processing tool configured to perform a semiconductor device manufacturing process on a substrate; and (3) a laser delivery mechanism coupled to the controller, the laser delivery mechanism configured to selectively deliver laser energy to the substrate during processing within the processing tool so as to selectively heat the substrate during processing. The controller is configured to employ the substrate uniformity information to determine a temperature profile to apply to the substrate during processing within the processing tool and to employ the laser delivery mechanism to selectively heat the substrate during processing within the processing tool based on the temperature profile. Numerous other embodiments are provided.

Abstract: Novel biodegradable amphiphilic polymers are described. Preferred polymers have a lipophilic binding moiety coupled covalently to a hydrophilic tissue adhesion moiety through a divalent linker comprising a natural metabolite or a polymer biodegradable into a natural metabolite. In one embodiment the biodegradable polymers of the invention exhibit the property of self-assembly characteristic of liquid crystals. The present amphiphilic biodegradable polymers can be used alone or in combination with other biocompatible polymers, with cells, growth factors, hormones, and/or other pharmaceutical agents in fabrication of implantable matrices for tissue repair. The polymers are biodegradable into art-recognized biocompatible components, preferably natural metabolites.