Abstract: A high TCR tungsten resistor on a reverse biased Schottky diode. A high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A high TCR tungsten resistor embedded in a intermetal dielectric layer above a lower interconnect layer and below an upper interconnect layer. A method of forming a high TCR tungsten resistor on a reverse biased Schottky diode. A method of forming high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A method of forming high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A method of forming high TCR tungsten resistor embedded in a inter metal dielectric layer above a lower interconnect layer and below an upper interconnect layer.

Abstract: The disclosure provides a detector that includes a pre-charge circuit. The pre-charge circuit receives a supply voltage. A pre-charged comparator is coupled to the pre-charge circuit and receives the supply voltage. The pre-charged comparator generates a transition signal at a transition node. A slope of the transition signal is greater than a slope of the supply voltage. A first diode connected transistor receives the supply voltage. A first capacitor is coupled to the first diode connected transistor. An inverter is coupled to the first diode connected transistor and generates an enable signal when the supply voltage is below a threshold voltage.

Abstract: The disclosure provides a detector that includes a pre-charge circuit. The pre-charge circuit receives a supply voltage. A pre-charged comparator is coupled to the pre-charge circuit and receives the supply voltage. The pre-charged comparator generates a transition signal at a transition node. A slope of the transition signal is greater than a slope of the supply voltage. A first diode connected transistor receives the supply voltage. A first capacitor is coupled to the first diode connected transistor. An inverter is coupled to the first diode connected transistor and generates an enable signal when the supply voltage is below a threshold voltage.

Abstract: The disclosure provides a detector that includes a pre-charge circuit. The pre-charge circuit receives a supply voltage. A pre-charged comparator is coupled to the pre-charge circuit and receives the supply voltage. The pre-charged comparator generates a transition signal at a transition node. A slope of the transition signal is greater than a slope of the supply voltage. A first diode connected transistor receives the supply voltage. A first capacitor is coupled to the first diode connected transistor. An inverter is coupled to the first diode connected transistor and generates an enable signal when the supply voltage is below a threshold voltage.

Abstract: A high TCR tungsten resistor on a reverse biased Schottky diode. A high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A high TCR tungsten resistor embedded in a intermetal dielectric layer above a lower interconnect layer and below an upper interconnect layer. A method of forming a high TCR tungsten resistor on a reverse biased Schottky diode. A method of forming high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A method of forming high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A method of forming high TCR tungsten resistor embedded in a inter metal dielectric layer above a lower interconnect layer and below an upper interconnect layer.

Abstract: The disclosure provides a detector that includes a pre-charge circuit. The pre-charge circuit receives a supply voltage. A pre-charged comparator is coupled to the pre-charge circuit and receives the supply voltage. The pre-charged comparator generates a transition signal at a transition node. A slope of the transition signal is greater than a slope of the supply voltage. A first diode connected transistor receives the supply voltage. A first capacitor is coupled to the first diode connected transistor. An inverter is coupled to the first diode connected transistor and generates an enable signal when the supply voltage is below a threshold voltage.

Abstract: The disclosure provides a detector that includes a pre-charge circuit. The pre-charge circuit receives a supply voltage. A pre-charged comparator is coupled to the pre-charge circuit and receives the supply voltage. The pre-charged comparator generates a transition signal at a transition node. A slope of the transition signal is greater than a slope of the supply voltage. A first diode connected transistor receives the supply voltage. A first capacitor is coupled to the first diode connected transistor. An inverter is coupled to the first diode connected transistor and generates an enable signal when the supply voltage is below a threshold voltage.

Abstract: The disclosure provides a detector that includes a pre-charge circuit. The pre-charge circuit receives a supply voltage. A pre-charged comparator is coupled to the pre-charge circuit and receives the supply voltage. The pre-charged comparator generates a transition signal at a transition node. A slope of the transition signal is greater than a slope of the supply voltage. A first diode connected transistor receives the supply voltage. A first capacitor is coupled to the first diode connected transistor. An inverter is coupled to the first diode connected transistor and generates an enable signal when the supply voltage is below a threshold voltage.

Abstract: A high TCR tungsten resistor on a reverse biased Schottky diode. A high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A high TCR tungsten resistor embedded in a intermetal dielectric layer above a lower interconnect layer and below an upper interconnect layer. A method of forming a high TCR tungsten resistor on a reverse biased Schottky diode. A method of forming high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A method of forming high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A method of forming high TCR tungsten resistor embedded in a inter metal dielectric layer above a lower interconnect layer and below an upper interconnect layer.

Abstract: A high TCR tungsten resistor on a reverse biased Schottky diode. A high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A high TCR tungsten resistor embedded in a intermetal dielectric layer above a lower interconnect layer and below an upper interconnect layer. A method of forming a high TCR tungsten resistor on a reverse biased Schottky diode. A method of forming high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A method of forming high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A method of forming high TCR tungsten resistor embedded in a inter metal dielectric layer above a lower interconnect layer and below an upper interconnect layer.

Abstract: A high TCR tungsten resistor on a reverse biased Schottky diode. A high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A high TCR tungsten resistor embedded in a intermetal dielectric layer above a lower interconnect layer and below an upper interconnect layer. A method of forming a high TCR tungsten resistor on a reverse biased Schottky diode. A method of forming high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A method of forming high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A method of forming high TCR tungsten resistor embedded in a inter metal dielectric layer above a lower interconnect layer and below an upper interconnect layer.

Abstract: Offset calibration technique to improve performance of band gap voltage reference. An example of a bandgap reference source includes an output resistor, a first and second transistors and a differential amplifier. A positive-input calibration phase switch is in communication with a positive amplifier input, a emitter of the first and second transistor and a negative-input calibration phase switch in communication with the negative amplifier input, the emitter of the first and second transistor. A positive-output calibration phase switch is in communication with the positive amplifier output, the first and second terminal of the output resistor and a negative-output calibration phase switch is in communication with the negative amplifier output, the first and second terminal of the output resistor. An adjustable resistance is in communication with the emitter of the first transistor, the emitter of the second transistor, and the second terminal of the output resistor.

Abstract: A high TCR tungsten resistor on a reverse biased Schottky diode. A high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A high TCR tungsten resistor embedded in a intermetal dielectric layer above a lower interconnect layer and below an upper interconnect layer. A method of forming a high TCR tungsten resistor on a reverse biased Schottky diode. A method of forming high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A method of forming high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A method of forming high TCR tungsten resistor embedded in a inter metal dielectric layer above a lower interconnect layer and below an upper interconnect layer.

Abstract: Offset calibration technique to improve performance of band gap voltage reference. An example of a bandgap reference source includes an output resistor, a first and second transistors and a differential amplifier. A positive-input calibration phase switch is in communication with a positive amplifier input, a emitter of the first and second transistor and a negative-input calibration phase switch in communication with the negative amplifier input, the emitter of the first and second transistor. A positive-output calibration phase switch is in communication with the positive amplifier output, the first and second terminal of the output resistor and a negative-output calibration phase switch is in communication with the negative amplifier output, the first and second terminal of the output resistor. An adjustable resistance is in communication with the emitter of the first transistor, the emitter of the second transistor, and the second terminal of the output resistor.