Patents by Inventor Sudarshan Loyalka

Sudarshan Loyalka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8394711
    Abstract: Various embodiments of the present disclosure provide a method of simultaneously co-doping a wide band gap material with p-type and n-type impurities to create a p-n junction within the resulting wide band gap composite material. The method includes disposing a sample comprising a dopant including both p-type and n-type impurities between a pair of wide band gap material films and disposing the sample between a pair of opposing electrodes; and subjecting the sample to a preselected vacuum; and heating the sample to a preselected temperature; and applying a preselected voltage across the sample; and subjecting the sample to at least one laser beam having a preselected intensity and a preselected wavelength, such that the p-type and n-type impurities of the dopant substantially simultaneously diffuse into the wide band gap material films resulting in a wide band gap compound material comprising a p-n junction.
    Type: Grant
    Filed: June 6, 2011
    Date of Patent: March 12, 2013
    Assignee: The Curators of the University of Missouri
    Inventors: Mark A. Prelas, Tushar K. Ghos, Robert V. Tompson, Jr., Dabir S. Viswanath, Sudarshan Loyalka
  • Publication number: 20110237057
    Abstract: Various embodiments of the present disclosure provide a method of simultaneously co-doping a wide band gap material with p-type and n-type impurities to create a p-n junction within the resulting wide band gap composite material. The method includes disposing a sample comprising a dopant including both p-type and n-type impurities between a pair of wide band gap material films and disposing the sample between a pair of opposing electrodes; and subjecting the sample to a preselected vacuum; and heating the sample to a preselected temperature; and applying a preselected voltage across the sample; and subjecting the sample to at least one laser beam having a preselected intensity and a preselected wavelength, such that the p-type and n-type impurities of the dopant substantially simultaneously diffuse into the wide band gap material films resulting in a wide band gap compound material comprising a p-n junction.
    Type: Application
    Filed: June 6, 2011
    Publication date: September 29, 2011
    Applicant: THE CURATORS OF THE UNIVERSITY OF MISSOURI
    Inventors: Mark A. Prelas, Tushar K. Ghos, Robert V. Tompson, JR., Dabir S. Viswanath, Sudarshan Loyalka
  • Publication number: 20080007267
    Abstract: A chemical and biological agent sensor includes an electrostatic thin film supported by a substrate. The film includes an electrostatic charged surface to attract predetermined biological and chemical agents of interest. A charge collector associated with said electrostatic thin film collects charge associated with surface defects in the electrostatic film induced by the predetermined biological and chemical agents of interest. A preferred sensing system includes a charge based deep level transient spectroscopy system to read out charges from the film and match responses to data sets regarding the agents of interest. A method for sensing biological and chemical agents includes providing a thin sensing film having a predetermined electrostatic charge. The film is exposed to an environment suspected of containing the biological and chemical agents. Quantum surface effects on the film are measured.
    Type: Application
    Filed: December 13, 2006
    Publication date: January 10, 2008
    Inventors: Mark Prelas, Tushar Ghosh, Robert Tompson, Dabir Viswanath, Sudarshan Loyalka
  • Patent number: 6632768
    Abstract: An adsorbent for HC in an exhaust gas is an agglomerate of double-structure particles, each of which includes an HC-adsorbing zeolite core, and a ceramic coat wrapping the zeolite core and having a plurality of through-pores communicating with a plurality of pores in the zeolite core. Each of the double-structure particles is at least one of a double-structure particle including the zeolite core comprising a single zeolite particle, and a double-structure particle including the zeolite core comprising a plurality of zeolite particles. Each of the through-pores in the ceramic coat has such a shape that the HC is easy to flow into the through-pore and difficult to flow out of the through-pore.
    Type: Grant
    Filed: March 12, 2001
    Date of Patent: October 14, 2003
    Assignees: University of Missouri-Columbia, Honda Giken Kogyo Kabushiki Kaisha
    Inventors: Sudarshan Loyalka, Tushar Ghosh, Robert V. Tompson, Jr., George Vosnidis, Gregory A. Holscher, Hiroshi Ogasa, Tetsuo Endo
  • Publication number: 20020160905
    Abstract: An adsorbent for HC in an exhaust gas is an agglomerate of double-structure particles, each of which includes an HC-adsorbing zeolite core, and a ceramic coat wrapping the zeolite core and having a plurality of through-pores communicating with a plurality of pores in the zeolite core. Each of the double-structure particles is at least one of a double-structure particle including the zeolite core comprising a single zeolite particle, and a double-structure particle including the zeolite core comprising a plurality of zeolite particles. Each of the through-pores in the ceramic coat has such a shape that the HC is easy to flow into the through-pore and difficult to flow out of the through-pore.
    Type: Application
    Filed: March 12, 2001
    Publication date: October 31, 2002
    Applicant: UNIVERSITY OF MISSOURI-COLUMBIA
    Inventors: Sudarshan Loyalka, Tushar Ghosh, Robert V. Tompson, George Vosnidis, Gregory A. Holscher, Hiroshi Ogasa, Tetsuo Endo