Abstract: A linear coefficient of thermal expansion (CTE) mismatch between two materials, such as between a microelectronic die and a mounting substrate, may induce stress at the interface of the materials. The temperature changes present during the process of attaching a die to a mounting substrate can cause cracking and failure in the electrical connections used to connect the die and mounting substrate. A material with a CTE approximately matching the die CTE is introduced in the mounting substrate to reduce the stress and cracking at the electrical connections between the die and mounting substrate. Additionally, this material may comprise thin film capacitors useful for decoupling power supplies.

Abstract: Method of forming a microelectronic package using control of die and substrate differential expansions. The method includes: providing a die-substrate combination including a substrate, a die disposed on the substrate, and plurality of solder paste disposed between the die and the substrate; reflowing the solder paste by exposing the die-substrate combination to temperatures changes including heating the die-substrate combination to liquefy the solder paste, and cooling down the die-substrate combination until the solder paste has solidified to form solder joints to yield the package; and controlling an expansion of the die and the substrate at least during cooling down to mitigate a relative difference in volumetric strain between the die and the substrate. Controlling may comprise exposing the die-substrate combination to pressure changes at least during cooling down.

Abstract: Disclosed is a packaged integrated circuit and a method of forming thereof. The packaged integrated circuit includes a substrate, a plurality of solder bumps, a semiconductor die and a plurality of copper bumps. The plurality of solder bumps are configured on the substrate. Each of the plurality of solder bumps has a height of about 40 micrometers (?m) to about 65 ?m. Further, the plurality of copper bumps are configured on the semiconductor die. Each of the plurality of copper bumps has a height of about 10 ?m to about 25 ?m. The semiconductor die is disposed above the substrate such that the plurality of copper bumps are coupled to the plurality of solder bumps, which in turn, couples the semiconductor die to the substrate.

Abstract: A linear coefficient of thermal expansion (CTE) mismatch between two materials, such as between a microelectronic die and a mounting substrate, may induce stress at the interface of the materials. The temperature changes present during the process of attaching a die to a mounting substrate can cause cracking and failure in the electrical connections used to connect the die and mounting substrate. A material with a CTE approximately matching the die CTE is introduced in the mounting substrate to reduce the stress and cracking at the electrical connections between the die and mounting substrate. Additionally, this material may comprise thin film capacitors useful for decoupling power supplies.

Abstract: A microelectronic assembly is provided, comprising at least a first microelectronic die carrying a microelectronic circuit, at least a first periphery seal attached to an edge of a surface of the microelectronic die, at least a first solder thermal interface material attached to a central region of the surface of the microelectronic die, the solder thermal interface material having a higher thermal conductivity than the periphery seal, and a thermally conductive member attached to the periphery seal and the solder thermal interface material on a side thereof opposing the microelectronic die.

Abstract: Embodiments of a method for attaching a die to a substrate using a flame or other heat source are disclosed. The flame may be produced by combustible gas. Also disclosed are embodiments of a system for performing die attach using a flame. Other embodiments are described and claimed.