Abstract: A chip includes a merger cell including a first p-type length of diffusion (LOD) region extending in a first direction, a first n-well underneath the first p-type LOD region, a first supply rail configured to receive a first supply voltage, and a first n-tap coupling the first n-well to the first supply rail. The merger cell also includes a second p-type length of diffusion (LOD) region extending in the first direction, a second n-well underneath the second p-type LOD region, a second supply rail configured to receive a second supply voltage different from the first supply voltage, and a second n-tap coupling the second n-well to the second supply rail.

Abstract: In described examples, an apparatus includes: a set of control registers containing control bits for controlling circuitry coupled to receive register write enable signals and to receive input data; a memory for storing data corresponding to the control bits coupled to receive an address and a memory write enable signal; decode circuitry coupled to output the register write enable signals; a data output bus coupled to receive data from the memory but free from connections to the control registers; and a controller coupled to receive an address, coupled to output the address on an internal address bus, coupled to output a register write enable signal, and coupled to output the memory write enable signal, configured to cause data to be written to a selected control register corresponding to the address received, and to cause the data to be contemporaneously stored at a memory location corresponding to the address received.

Abstract: In described examples, an apparatus includes: a set of control registers containing control bits for controlling circuitry coupled to receive register write enable signals and to receive input data; a memory for storing data corresponding to the control bits coupled to receive an address and a memory write enable signal; decode circuitry coupled to output the register write enable signals; a data output bus coupled to receive data from the memory but free from connections to the control registers; and a controller coupled to receive an address, coupled to output the address on an internal address bus, coupled to output a register write enable signal, and coupled to output the memory write enable signal, configured to cause data to be written to a selected control register corresponding to the address received, and to cause the data to be contemporaneously stored at a memory location corresponding to the address received.

Abstract: In described examples, an apparatus includes: a set of control registers containing control bits for controlling circuitry coupled to receive register write enable signals and to receive input data; a memory for storing data corresponding to the control bits coupled to receive an address and a memory write enable signal; decode circuitry coupled to output the register write enable signals; a data output bus coupled to receive data from the memory but free from connections to the control registers; and a controller coupled to receive an address, coupled to output the address on an internal address bus, coupled to output a register write enable signal, and coupled to output the memory write enable signal, configured to cause data to be written to a selected control register corresponding to the address received, and to cause the data to be contemporaneously stored at a memory location corresponding to the address received.

Abstract: In described examples, an apparatus includes: a set of control registers containing control bits for controlling circuitry coupled to receive register write enable signals and to receive input data; a memory for storing data corresponding to the control bits coupled to receive an address and a memory write enable signal; decode circuitry coupled to output the register write enable signals; a data output bus coupled to receive data from the memory but free from connections to the control registers; and a controller coupled to receive an address, coupled to output the address on an internal address bus, coupled to output a write enable signal, and coupled to output the memory write enable signal, configured to cause data to be written to a selected control register corresponding to the address received, and to cause the data to be contemporaneously stored at a memory location corresponding to the address received.

Abstract: An integrated circuit device having a p-well plane, a plurality of substantially parallel n-well rows, and a logic cell. The p-well plane is comprised of p-type semiconductor material. Each n-well row comprises an n-type layer disposed on the surface of the p-well plane. The plurality of n-well rows includes a first n-well row and a second n-well row. The logic cell is arranged on the p-well plane and the footprint of the logic cell encompasses both the first and second n-well rows.

Abstract: An integrated circuit device having a p-well plane, a plurality of substantially parallel n-well rows, and a logic cell. The p-well plane is comprised of p-type semiconductor material. Each n-well row comprises an n-type layer disposed on the surface of the p-well plane. The plurality of n-well rows includes a first n-well row and a second n-well row. The logic cell is arranged on the p-well plane and the footprint of the logic cell encompasses both the first and second n-well rows.

Abstract: A circuit for reducing gate leakage current in a switchable power domain of a CMOS (complementary metal oxide semiconductor) integrated circuit chip includes a first transistor having a drain electrode coupled to a first terminal of a power switch having a second terminal coupled to a first reference voltage, the first transistor having a gate electrode, a body electrode, and a source electrode. The source electrode and body electrodes are coupled to a second reference voltage. The first transistor has a relatively high first gate leakage current that flows from its gate electrode to its body electrode if the power switch is open and a voltage of the gate electrode of the first transistor representing a first logic level exceeds a voltage of the body electrode by more than a first predetermined amount.