Abstract: The instant invention is a coating system, a coating composition, a coating layer, a coated substrate, a method for producing a coating composition, a method for forming a coating layer, a method for making a coated substrate, and a method for healing a coated substrate. The coating system according to the present invention comprises (a) one or more natural oil derived polyols having an average of 3 or more hydroxyl groups per molecule, a number average molecular weight in the range of 300 to 3000 Daltons, a Tg in the range of from less than 0° C.; and (b) one or more polyisocyanates.

Abstract: The present invention is directed to an electrolyte comprising a first phase including a porous organic microparticle; and a second phase including an ethylene oxide-containing polymer (i.e., an EOP); wherein the second phase is a continuous phase. The polymeric electrolyte compositions preferably also includes a lithium salt and optionally a solvent. The polymeric electrolyte composition may have a shear modulus, G?, measured at 1 rad/sec and about 30° C. and a conductivity, ?, measured at about 30° C., such that i) G?-? is greater than about 200 (S/cm)(dynes/cm2); and ii) G? is from about 104 to about 1010 dynes/cm2.

Abstract: This invention relates to a high-strength herbicidal formulation containing high concentrations of glyphosate monomethylamine or dimethylamine salt and one or more surfactants selected to enhance the herbicidal activity of the glyphosate salts. The formulations exhibit significantly lower viscosity at high concentrations.

Abstract: Provided is a method for manufacturing a fixed abrasive material suitable for use in CMP planarization pads from an aqueous polymer dispersion that also includes abrasive particles that involves frothing the polymer dispersion, applying the froth to a substrate, mold or carrier and curing the froth to form a fixed abrasive material having an open cell structure containing between about 5 and 85 wt % abrasive particles and a dry density of about 350 kg/m3 to 1200 kg/m3.

Abstract: Provided are materials and methods for the chemical mechanical planarization of material layers using a down force of less than about 2.5 psi while maintaining a material removal rate generally similar to that obtained using higher down forces while simultaneously improving the selectivity of the process with respect to a primary material formed over a barrier material. The materials and methods disclosed herein are suitable for use in meatallization operations during semiconductor device fabrication, in particular in processes in which the primary material is a softer metal such as copper and the barrier material is a harder material such as a metal nitride.

Abstract: Provided are materials and methods for the chemical mechanical planarization of material layers such as oxide or metal formed on semiconductor substrates during the manufacture of semiconductor devices using a fixed abrasive planarization pad having an open cell foam structure from which free abrasive particles are produced by conditioning and combined with a carrier liquid to form an in situ slurry on the polishing surface of the planarization pad that, in combination with relative motion between the semiconductor substrate and the planarization pad, tends to remove the material layer from the surface of the semiconductor substrate. Depending on the composition of the material layer, the rate of material removal from the semiconductor substrate may be controlled by manipulating the pH or the oxidizer content of the carrier liquid.

Abstract: Provided are materials and methods for the chemical mechanical planarization of material layers using a down force of less than about 2.5 psi while maintaining a material removal rate generally similar to that obtained using higher down forces while simultaneously improving the selectivity of the process with respect to a primary material formed over a barrier material. The materials and methods disclosed herein are suitable for use in metallization operations during semiconductor device fabrication, in particular in processes in which the primary material is a softer metal such as copper and the barrier material is a harder material such as a metal nitride.

Abstract: This invention relates to a high-strength herbicidal formulation containing high concentrations of glyphosate monomethylamine or dimethylamine salt and one or more surfactants selected to enhance the herbicidal activity of the glyphosate salts. The formulations exhibit significantly lower viscosity at high concentrations.

Abstract: A process is disclosed for producing resilient polyurethane foams by foaming an organic polyisocyanate, an iso-cyanate-reactive compound and a fusible polymer. The improvement in the hardness of the foams is achieved without adversely affecting the other properties of the foams, such as tensile strength and elongation.

Abstract: Provided is a method for manufacturing a fixed abrasive material suitable for use in CMP planarization pads from an aqueous polymer dispersion that also includes abrasive particles that involves frothing the polymer dispersion, applying the froth to a substrate, mold or carrier and curing the froth to form a fixed abrasive material having an open cell structure containing between about 5 and 85 wt % abrasive particles and a dry density of about 350 kg/m3 to 1200 kg/m3.

Abstract: Provided are materials and methods for the chemical mechanical planarization of material layers such as oxide or metal formed on semiconductor substrates during the manufacture of semiconductor devices using a fixed abrasive planarization pad having an open cell foam structure from which free abrasive particles are produced by conditioning and combined with a carrier liquid to form an in situ slurry on the polishing surface of the planarization pad that, in combination with relative motion between the semiconductor substrate and the planarization pad, tends to remove the material layer from the surface of the semiconductor substrate. Depending on the composition of the material layer, the rate of material removal from the semiconductor substrate may be controlled by manipulating the pH or the oxidizer content of the carrier liquid.

Abstract: A process is disclosed for producing resilient polyurethane foams by foaming an organic polyisocyanate, an iso-cyanate-reactive compound and a fusible polymer. The improvement in the hardness of the foams is achieved without adversely affecting the other properties of the foams, such as tensile strength and elongation.