Patents by Inventor Sudharsan Sundaram Prabhakaran

Sudharsan Sundaram Prabhakaran has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and method for manufacturing same
    Patent number: 11121247
    Abstract: A semiconductor device includes a semiconductor portion, a first insulating film, a second insulating film, a first contact, a second contact, and a gate electrode. The first insulating film is provided on the semiconductor portion. The second insulating film is contacting the first insulating film, is provided on the semiconductor portion, and is thicker than the first insulating film. A through-hole is formed in the second insulating film. The first contact has a lower end connected to the semiconductor portion. The second contact has a lower portion disposed inside the through-hole and a lower end connected to the semiconductor portion. The gate electrode is positioned between the first contact and the second contact, is provided on the first insulating film, and is provided on a portion of the second insulating film other than the through-hole.
    Type: Grant
    Filed: September 16, 2019
    Date of Patent: September 14, 2021
    Assignees: Kabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
    Inventors: Tomoko Kinoshita, Daisuke Shinohara, Kanako Komatsu, Yoshiaki Ishii, Sudharsan Sundaram Prabhakaran
  • SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
    Publication number: 20200303537
    Abstract: A semiconductor device includes a semiconductor portion, a first insulating film, a second insulating film, a first contact, a second contact, and a gate electrode. The first insulating film is provided on the semiconductor portion. The second insulating film is contacting the first insulating film, is provided on the semiconductor portion, and is thicker than the first insulating film. A through-hole is formed in the second insulating film. The first contact has a lower end connected to the semiconductor portion. The second contact has a lower portion disposed inside the through-hole and a lower end connected to the semiconductor portion. The gate electrode is positioned between the first contact and the second contact, is provided on the first insulating film, and is provided on a portion of the second insulating film other than the through-hole.
    Type: Application
    Filed: September 16, 2019
    Publication date: September 24, 2020
    Inventors: Tomoko Kinoshita, Daisuke Shinohara, Kanako Komatsu, Yoshiaki Ishii, Sudharsan Sundaram Prabhakaran