Abstract: A remote plasma process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber. In one embodiment, the substrate is transferred out of the substrate processing chamber and a flow of a fluorine-containing etchant gas is introduced into a remote plasma source where reactive species are formed. A continuous flow of the reactive species from the remote plasmas source to the substrate processing chamber is generated while a cycle of high and low pressure clean steps is repeated. During the high pressure clean step, reactive species are flown into the substrate processing chamber while pressure within the substrate processing chamber is maintained between 4-15 Torr.

Abstract: A method of operating a multi-chamber module including a first chamber, a second chamber, and a dispense arm area positioned between the first chamber and the second chamber. The method includes flowing a process gas into the first chamber, the second chamber, and the dispense arm area. The method also includes exhausting a first gas from the first chamber using a first exhaust path in fluid communication with a shared exhaust, exhausting a second gas from the second chamber using a second exhaust path in fluid communication with the shared exhaust, and exhausting a third gas from the dispense arm area using a dispense arm area exhaust in fluid communication with the shared exhaust.