Patents by Inventor Sudip Bandyopadhyay

Sudip Bandyopadhyay has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Conductive components and memory assemblies
    Patent number: 10475810
    Abstract: Some embodiments include a memory assembly having memory cells proximate a conductive source. Channel material extends along the memory cells and is electrically coupled with the conductive source. The conductive source is over an insulative material and includes an adhesion material directly against the insulative material. The adhesion material comprises one or more of metal, silicon nitride, silicon oxynitride, silicon carbide, metal silicide, metal carbide, metal oxide, metal oxynitride and metal nitride. The conductive source includes metal-containing material over and directly against the adhesion material. The metal-containing material consists essentially of metal. The conductive source includes a metal-and-nitrogen-containing material over and directly against the metal-containing material, and includes a conductively-doped semiconductor material over the metal-and-nitrogen-containing material.
    Type: Grant
    Filed: June 29, 2018
    Date of Patent: November 12, 2019
    Assignee: Micron Technology, Inc.
    Inventors: Sudip Bandyopadhyay, Keen Wah Chow, Devesh Kumar Datta, Anurag Jindal, David Ross Economy, John Mark Meldrim
  • Conductive Components and Memory Assemblies
    Publication number: 20180308861
    Abstract: Some embodiments include a memory assembly having memory cells proximate a conductive source. Channel material extends along the memory cells and is electrically coupled with the conductive source. The conductive source is over an insulative material and includes an adhesion material directly against the insulative material. The adhesion material comprises one or more of metal, silicon nitride, silicon oxynitride, silicon carbide, metal silicide, metal carbide, metal oxide, metal oxynitride and metal nitride. The conductive source includes metal-containing material over and directly against the adhesion material. The metal-containing material consists essentially of metal. The conductive source includes a metal-and-nitrogen-containing material over and directly against the metal-containing material, and includes a conductively-doped semiconductor material over the metal-and-nitrogen-containing material.
    Type: Application
    Filed: June 29, 2018
    Publication date: October 25, 2018
    Applicant: Micron Technology, Inc.
    Inventors: Sudip Bandyopadhyay, Keen Wah Chow, Devesh Kumar Datta, Anurag Jindal, David Ross Economy, John Mark Meldrim
  • Conductive components and memory assemblies
    Patent number: 10014319
    Abstract: Some embodiments include a memory assembly having memory cells proximate a conductive source. Channel material extends along the memory cells and is electrically coupled with the conductive source. The conductive source is over an insulative material and includes an adhesion material directly against the insulative material. The adhesion material comprises one or more of metal, silicon nitride, silicon oxynitride, silicon carbide, metal silicide, metal carbide, metal oxide, metal oxynitride and metal nitride. The conductive source includes metal-containing material over and directly against the adhesion material. The metal-containing material consists essentially of metal. The conductive source includes a metal-and-nitrogen-containing material over and directly against the metal-containing material, and includes a conductively-doped semiconductor material over the metal-and-nitrogen-containing material.
    Type: Grant
    Filed: August 17, 2017
    Date of Patent: July 3, 2018
    Assignee: Micron Technology, Inc.
    Inventors: Sudip Bandyopadhyay, Keen Wah Chow, Devesh Kumar Datta, Anurag Jindal, David Ross Economy, John Mark Meldrim
  • Conductive components and memory assemblies
    Patent number: 9773807
    Abstract: Some embodiments include a memory assembly having memory cells proximate a conductive source. Channel material extends along the memory cells and is electrically coupled with the conductive source. The conductive source is over an insulative material and includes an adhesion material directly against the insulative material. The adhesion material comprises one or more of metal, silicon nitride, silicon oxynitride, silicon carbide, metal silicide, metal carbide, metal oxide, metal oxynitride and metal nitride. The conductive source includes metal-containing material over and directly against the adhesion material. The metal-containing material consists essentially of metal. The conductive source includes a metal-and-nitrogen-containing material over and directly against the metal-containing material, and includes a conductively-doped semiconductor material over the metal-and-nitrogen-containing material.
    Type: Grant
    Filed: March 10, 2017
    Date of Patent: September 26, 2017
    Assignee: Micron Technology, Inc.
    Inventors: Sudip Bandyopadhyay, Keen Wah Chow, Devesh Kumar Datta, Anurag Jindal, David Ross Economy, John Mark Meldrim