Abstract: Disclosed herein are embodiments of systems and method for processing feedstock materials using microwave plasma processing. Specifically, the feedstock materials disclosed herein pertain to metal powders. Microwave plasma processing can be used to spheroidize the metal powders and form metal nitride or metal carbide powders. The stoichiometry of the metal nitride or metal carbide powders can be controlled by changing the composition of the plasma gas and the residence time of the feedstock materials during plasma processing.

Abstract: A new approach is proposed to increase uplink traffic throughput of a time division duplex (TDD) system, e.g., a TD-LTE (A) system, by configuring a plurality of PUCCH parameters for an UE in the TDD system. Specifically, the PUCCH parameters of an uplink channel between the UE in the TDD system are configured and stored in the UE and a base station/cell (eNodeB) of the TDD system in such a manner that the PUCCH region utilized by the UE is restricted to only a few RBs and the PUSCH region of the uplink channel is maximized in terms of RBs available for transmission over the uplink channel, thereby increasing the uplink throughput at the eNodeB level of the TD-LTE (A) system. The configured PUCCH parameters include channel quality indicator (CQI) information/report, which is an indicator carrying the information on how good/bad the communication channel quality is in the TDD system.

Abstract: Disclosed herein are embodiments of systems and method for processing feedstock materials using microwave plasma processing. Specifically, the feedstock materials disclosed herein pertain to metal powders. Microwave plasma processing can be used to spheroidize the metal powders and form metal nitride or metal carbide powders. The stoichiometry of the metal nitride or metal carbide powders can be controlled by changing the composition of the plasma gas and the residence time of the feedstock materials during plasma processing.

Abstract: A new approach is proposed to increase uplink traffic throughput of a time division duplex (TDD) system, e.g., a TD-LTE (A) system, by configuring a plurality of PUCCH parameters for an UE in the TDD system. Specifically, the PUCCH parameters of an uplink channel between the UE in the TDD system are configured and stored in the UE and a base station/cell (eNodeB) of the TDD system in such a manner that the PUCCH region utilized by the UE is restricted to only a few RBs and the PUSCH region of the uplink channel is maximized in terms of RBs available for transmission over the uplink channel, thereby increasing the uplink throughput at the eNodeB level of the TD-LTE (A) system. The configured PUCCH parameters include channel quality indicator (CQI) information/report, which is an indicator carrying the information on how good/bad the communication channel quality is in the TDD system.