Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which memory devices are configured to monitor degradations in word line characteristics. The memory device may generate a reference signal in response to an access command directed to a memory array including a plurality of word lines, in some embodiments. The memory array may include a victim word line configured to accumulate adverse effects of executing multiple access commands at the word lines of the memory array. When the degradation in the word line characteristics causes reliability issues (e.g., corrupted data), the memory array is deemed unreliable, and may be blocked from memory operations. The memory device may compare the reference signal and a signal from the victim word line to determine whether preventive measures may be appropriate to avoid (or mitigate) such reliability issues.

Abstract: Methods, devices, and systems associated with audio and visual input analysis are described. A method can include recording audio during production of artwork using a microphone, storing the audio recording in tiered memory, generating an image of the artwork using an image sensor, storing the image of the artwork in the tiered memory, receiving a reference library including a number of audio recordings and a number of images of artwork, comparing the image of the artwork to the number of images of artwork and the audio recording to the number of audio recordings, and providing an output in response to at least one of: the image of the artwork matching one of the number of images of artwork or the audio recording matching one of the number of audio recordings.

Abstract: Methods and devices related to a cellular signal mesh network are described. In an example, a method can include determining, via a processing resource of a first computing device, whether a cellular signal of the first computing device is below a threshold cellular signal, transmitting from the first computing device to a second computing device first signaling including data representing a request for operational data of the second computing device in response to determining that the cellular signal of the first computing device is below the threshold cellular signal, receiving from the second computing device second signaling comprising the operational data of the second computing device, and transmitting from the first computing device to the second computing device third signaling including data representing at least one of: a voice call, a video call, or a message in response to receiving the second signaling comprising the operational data.

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which memory devices are configured to monitor degradations in word line characteristics. The memory device may generate a reference signal in response to an access command directed to a memory array including a plurality of word lines, in some embodiments. The memory array may include a victim word line configured to accumulate adverse effects of executing multiple access commands at the word lines of the memory array. When the degradation in the word line characteristics causes reliability issues (e.g., corrupted data), the memory array is deemed unreliable, and may be blocked from memory operations. The memory device may compare the reference signal and a signal from the victim word line to determine whether preventive measures may be appropriate to avoid (or mitigate) such reliability issues.

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which memory devices are configured to monitor degradations in word line characteristics. The memory device may generate a reference signal in response to an access command directed to a memory array including a plurality of word lines, in some embodiments. The memory array may include a victim word line configured to accumulate adverse effects of executing multiple access commands at the word lines of the memory array. When the degradation in the word line characteristics causes reliability issues (e.g., corrupted data), the memory array is deemed unreliable, and may be blocked from memory operations. The memory device may compare the reference signal and a signal from the victim word line to determine whether preventive measures may be appropriate to avoid (or mitigate) such reliability issues.

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which memory devices are configured to monitor degradations in word line characteristics. The memory device may generate a reference signal in response to an access command directed to a memory array including a plurality of word lines, in some embodiments. The memory array may include a victim word line configured to accumulate adverse effects of executing multiple access commands at the word lines of the memory array. When the degradation in the word line characteristics causes reliability issues (e.g., corrupted data), the memory array is deemed unreliable, and may be blocked from memory operations. The memory device may compare the reference signal and a signal from the victim word line to determine whether preventive measures may be appropriate to avoid (or mitigate) such reliability issues.